HER810T-HER860T
High Efficiency Rectifiers
VOLTAGE RANGE:
100
---
600
V
CURRENT:
8.0
A
2.8± 0.1
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
TO
-
220AC
10.2± 0.2
φ
3.8± 0.15
4.5± 0.2
1.4± 0.2
19.0± 0.5
PIN
1
2
8.9± 0.2
2.6± 0.2
3.5± 0.3
13.8± 0.5
5.0± 0.1
0.5± 0.1
Mechanical Data
Case:JEDEC TO-220AC,molded plastic body
Polarity: As marked
Weight: 0.064 ounces,1.96 gram
Mounting position: Any
0.9± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
810T
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
C
=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
HER
820T
200
140
200
8.0
HER
840T
400
280
400
HER
860T
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
I
FSM
200
1.3
10
150
50
40
25
A
Maximum instantaneous forw ard voltage
@ 8.0A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
t
rr
C
J
R
θ
JC
1.0
1.7
V
A
100
ns
pF
/W
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
T
J
T
STG
- 55 ---- + 150
- 55 ---- + 150
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
Revision:20170701-P1
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HER810T-HER860T
High Efficiency Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t
rr
50
N 1.
10
N 1.
+0.5A
D.U.T.
(+)
50VDC
(approx)
(-)
1
NONIN-
DUCTIVE
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR
20/45
ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
FIG.3 -- FORWARD DERATING CURVE
1
0
z
100
400V
T
J
=25
Pulse W idth=300
µ
S
AVERAGE FORWARD CURRENT
8
AMPERES
10
100\200
600V
6
AMPERES
4
1
2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
25
50
75
100
125
150
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
CASE TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
FIG.5 -- PEAK FORWARD SURGE CURRENT
1000
200
JUNCTION CAPACITANCE,pF
600
400
200
100
150
T
J
=125℃
8.3ms Single Half
Sine-Wave
AMPERES
100
40
20
10
.1
TJ=25
f=1MHz
50
0
1
2
4
8
10 20
40
60 100
.2
.4
1.0
2 4
10 20
40
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
Revision:20170701-P1
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:
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