VS-HFA16TA60CSPbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 8 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I
RRM
and Q
rr
Specified at operating conditions
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
•
•
•
•
3
1
2
TO-263AB (D
2
PAK)
Base
common
cathode
2
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
1
Anode
2
3
Anode
Common
cathode
DESCRIPTION
VS-HFA16TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A per
leg continuous current, the VS-HFA16TA60CS is especially
well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA16TA60CS is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-263AB (D
2
PAK)
2x8A
600 V
1.4 V
18 ns
150 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
per leg
per device
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
8
16
60
24
36
14
-55 to +150
W
°C
A
UNITS
V
Revision: 09-May-16
Document Number: 94059
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 8.0 A
Maximum forward voltage
V
FM
I
F
= 16 A
I
F
= 8.0 A, T
J
= 125 °C
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.4
1.7
1.4
0.3
100
10
8.0
MAX.
-
1.7
2.1
1.7
5.0
500
25
-
μA
pF
nH
V
UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery
current during t
b
See fig. 11 & 12
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8.0 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
18
37
55
3.5
4.5
65
124
240
210
MAX.
-
55
90
5.0
8.0
138
360
-
A/μs
-
A
ns
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Weight
Mounting torque
Marking device
Case style TO-263AB (D
2
PAK)
R
thJA
Typical socket mount
SYMBOL
T
lead
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
-
R
thJC
-
-
-
-
6.0
(5.0)
-
-
2
0.07
-
1.75
80
-
-
12
(10)
g
oz.
kgf · cm
(lbf
in)
K/W
TYP.
-
-
MAX.
300
3.5
UNITS
°C
HFA16TA60CS
Revision: 09-May-16
Document Number: 94059
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
www.vishay.com
I
F
- Instantaneous Forward Current (A)
Vishay Semiconductors
1000
T
J
= 150 °C
100
I
R
- Reverse Current (μA)
100
10
1
0.1
T
J
= 25 °C
0.01
0.001
T
J
= 125 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
100
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
1
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
Z
thJC
- Thermal Response
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
2
0.1
Single
pulse
(thermal response)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
0.01
0.00001
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 09-May-16
Document Number: 94059
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
www.vishay.com
80
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
60
500
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
Vishay Semiconductors
400
40
Q
rr
(nC)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
t
rr
(ns)
300
200
20
100
0
100
0
100
1000
dI
F
/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
(Per Leg)
20
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt (Per Leg)
10 000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
16
dI
(rec)M
/dt (A/μs)
I
rr
(A)
12
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
1000
8
4
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
100
100
1000
0
100
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt (Per Leg)
dI
F
/dt (A/μs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt (Per Leg)
Revision: 09-May-16
Document Number: 94059
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA16TA60CSPbF
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 09-May-16
Document Number: 94059
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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