PD-20376B
HFA40HF120
FRED
Features
•
•
•
•
•
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
Ultrafast, Soft Recovery Diode
V
R
= 1200V
V
F
= 3.1V
Q
rr
= 510nC
di
(rec)M
/dt = 350A/µs
Description
These Ultrafast,soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameter
V
R
I
F(AV)
I
FSM
P
D
@ T
C
= 25°C
T
J,
T
STG
Cathode to Anode Voltage
Continuous Forward Current,
T
C
= 100°C
Single Pulse Forward Current,
T
C
= 25°C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Max.
1200
11
190
83
-55 to +150
Units
V
A
W
°C
Note:
D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , PW. = 8.33 ms
CASE STYLE
(ISOLATED BASE)
CATHODE
ANODE
SMD-1
www.irf.com
1
04/27/15
HFA40HF120
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
V
F
Cathode Anode Breakdown Voltage
Forward Voltage
See Fig. 1
Min. Typ. Max. Units
1200
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
28
5.9
—
3.2
3.1
4.0
2.7
10
1.0
42
—
V
V
Test Conditions
I
R
= 100µA
I
F
= 11A T
J
= -55°C
I
F
= 11A
I
F
= 22A
I
F
= 11A, T
J
= 125°C
V
R
= V
R
Rated
V
R
= 960V, T
J
= 125°C
V
R
= 200V
Measured from center of cathode
pad the center of anode pad
I
R
C
T
L
S
Max Reverse Leakage Current
See Fig. 2
Junction Capacitance, See Fig. 3
Series Inductance
µA
mA
pF
nH
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1
di
(rec)M
/dt2
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During t
b
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
Test Conditions
80 120
ns T
J
= 25°C See Fig.
130 195
T
J
= 125°C
5
I
F
= 11A
7.25 10.9
T
J
= 25°C See Fig.
A
10.2 15.3
T
J
= 125°C
6
V
R
= 200V
340 510
T
J
= 25°C See Fig.
nC
825 1240
T
J
= 125°C
7
di
f
/dt = 200A/µs
230 350
T
J
= 25°C See Fig.
A/µs
160 240
T
J
= 125°C
8
Thermal - Mechanical Characteristics
Parameter
R
thJC
Wt
Junction-to-Case
Weight
Typ.
—
2.6
Max.
1.5
—
Units
°C/W
g
2
www.irf.com
HFA40HF120
100
10000
Reverse Current - I
R
(µA)
1000
100
10
1
0.1
0.01
0.001
0
T = 150°C
J
TJ = 125°C
Instantaneous Forward Current - I F (A)
TJ = 25°C
TJ = -55°C
300
600
900
1200
10
Tj = 125°C
Reverse Voltage - V
R
(V)
Fig. 2
- Typical Reverse Current Vs. Reverse Voltage
Junction Capacitance - C
T
(pF)
1000
Tj = 25°C
Tj = -55°C
A
T
J
= 25°C
100
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward Voltage Drop - V F (V)
10
1
10
100
1000
Fig. 1
- Typical Forward Voltage Drop Vs.
Instantaneous Forward Current
10
Reverse Voltage - V
R
(V)
Fig. 3
- Typical Junction Capacitance Vs. Reverse Voltage
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
0.1
0.05
0.02
0.01
0.01
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig. 4
- Maximum Thermal Impedance Z
thjc
Characteristics
www.irf.com
3
HFA40HF120
250
100
I F = 22A
200
I F = 11A
I F = 5.5A
IF = 22A
IF = 11A
trr - (ns)
150
Irr- ( A)
IF = 5.5A
10
100
50
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
0
100
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
dif /dt - (A/µs)
1000
1
100
di
f
/dt - (A/µs)
1000
Fig. 5
- Typical Reverse Recovery vs. di
f
/dt,
10000
Fig. 6
- Typical Recovery Current vs. di
f
/dt,
10000
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
IF = 22A
IF = 11A
I F = 5.5A
di(rec)M/dt - (A/µs)
1000
Q
RR
- (nC)
1000
100
I F = 5.5A
IF = 11A
IF = 22A
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
100
100
1000
di
f
/dt - (A/µs)
10
100
di
f
/dt - (A/µs)
1000
Fig. 7
- Typical Stored Charge vs. di
f
/dt
Fig. 8
- Typical di
(rec)M
/dt vs. di
f
/dt
4
www.irf.com
HFA40HF120
3
I
F
t
rr
t
a
t
b
4
REVERSE RECOVERY CIRCUIT
V
R
= 200V
0
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
5
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
1
0.75 I
RRM
di
f
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Fig. 9
- Reverse Recovery Parameter Test Circuit
Fig. 10
- Reverse Recovery Waveformand Definitions
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
1 = CATHODE
2 = ANODE
3=N/C
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2015
www.irf.com
5
