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HFB06TB120STRL

Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, D2PAK-3

器件类别：分立半导体    二极管   

厂商名称：International Rectifier （ Infineon ）

厂商官网：http://www.irf.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
International Rectifier （ Infineon ）
零件包装代码
TO-263
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW NOISE
应用
ULTRA FAST SOFT RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
2.8 V
JESD-30 代码
R-PSSO-G2
JESD-609代码
e0
湿度敏感等级
1
最大非重复峰值正向电流
80 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
225
认证状态
Not Qualified
最大重复峰值反向电压
1200 V
最大反向恢复时间
0.08 µs
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
Bulletin PD -20602 rev. C 12/00
HFA06TB120S.. Series
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
•
•
•
•
•
Ultrafast Recovery
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Specified at Operating Conditions
(K)
BASE
+
2
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F(AV)
= 6.0A
Q
rr
(typ.)= 116nC
I
RRM
(typ.) = 4.4A
3
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
(N/C)
1
_
(A)
t
rr
(typ.) = 26ns
di
(rec)M
/dt (typ.)* = 100A/µs
Description
International Rectifier's HFA06TB120S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6
amps continuous current, the HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA06TB120S is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
D
2
Pak
Absolute Maximum Ratings
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
8.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
*
125°C
1
HFA06TB120S..Series
Bulletin PD-20602 rev. C 12/00
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
Cathode Anode Breakdown
Voltage
V
FM
Max. Forward Voltage
–––
–––
–––
I
RM
Max. Reverse Leakage Current
–––
–––
C
T
L
S
Junction Capacitance
Series Inductance
–––
–––
2.7
3.5
2.4
3.0
3.9
2.8
µA
pF
nH
V
I
F
= 6.0A
I
F
= 12A
I
F
= 6.0A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= 0.8 x V
R
Rated
D
R
V
R
= 200V
Rated
Min. Typ. Max. Units
1200 ––– –––
V
Test Conditions
I
R
= 100µA
0.26 5.0
110 500
9.0
8.0
14
–––
Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1 Peak Rate of Recovery
di
(rec)M
/dt2 Current During t
b
Reverse Recovery Charge
Peak Recovery Current
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
53
87
4.4
5.0
116
233
180
100
–––
80
130
8.0
9.0
320
585
–––
–––
A/µs
nC
A
ns
Test Conditions
I
F
= 1.0A, di
f
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
di
f
/dt = 200A/µs
V
R
= 200V
I
F
= 6.0A
Thermal - Mechanical Characteristics
Parameter
T
lead
!
R
thJC
R
thJA
"
R
thCS
$
Wt
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Weight
Min.
––––
––––
––––
––––
––––
––––
Typ.
––––
––––
––––
0.5
2.0
0.07
Max.
300
2.0
80
––––
––––
––––
g
(oz)
K/W
Units
°C
!
0.063 in. from Case (1.6mm) for 10 sec
"#Typical
Socket Mount
2
HFA06TB120S ..Series
Bulletin PD-20602 rev. C 12/00
100
1000
TJ = 150˚C
100
Reverse Current - I
R
(µA)
125˚C
100˚C
10
1
25˚C
10
Instantaneous Forward Current - I
F
(A)
0.1
0.01
0
200 400 600 800 1000 1200 1400
Reverse Voltage - V
R
(V)
100
1
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
Junction Capacitance - C
T
(pF)
T = 25˚C
J
10
0.1
0
2
4
Forward Voltage Drop - V
FM
(V)
6
1
1
10
100
1000
10000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
t1
t2
0.1
Notes:
1. Duty factor D = 1 / t
t 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
3
HFA06TB120S..Series
Bulletin PD-20602 rev. C 12/00
110
100
90
80
trr - ( nC )
I
F
= 6 A
I
F
= 4 A
25
20
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
I
F
= 6 A
I
F
= 4 A
15
Irr - ( A)
70
60
50
40
30
20
100
di
f
/dt - (A/µs )
Fig. 5 - Typical Reverse Recovery
Vs. di
f
/dt
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
10
5
1000
0
100
di
f
/dt - (A/µs )
1000
Fig. 6 - Typical Recovery Current
Vs. di
f
/dt
1000
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
10000
800
I
F
= 6 A
I
F
= 4 A
Qrr - ( nC )
600
400
di
(REC)
M/dt - (A/µs )
1000
I
F
= 6 A
I
F
= 4 A
100
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
200
0
100
di
f
/dt - (A/µs )
1000
10
100
di
f
/dt - (A/µs )
1000
Fig. 8 - Typical Stored Charge vs. di
f
/dt
Fig. 7 - Typical di
(REC)
M/dt vs. di
f
/dt
4
HFA06TB120S ..Series
Bulletin PD-20602 rev. C 12/00
REVERSE RECOVERY CIRCUIT
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
di
f
/dt
1. di
f
/dt - Rate of change of
current
through zero
crossing
2. I
RRM
- Peak reverse
recovery current
4. Q
rr
- Area under curve
defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
3. trr - Reverse recovery
time measured
from zero
2
crossing point of negative
going I
F
to point where a line 5. di
(rec)M
/dt - Peak rate of
passing through 0.75 I
RRM
change of current during t
b
and 0.50 I
RRM
portion of t
rr
extrapolated to zero current
Fig. 10 - Reverse Recovery Waveform and Definitions
5
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参数对比
与HFB06TB120STRL相近的元器件有：HFB06TB120STRLPBF、HFB06TB120STRR、HFB06TB120S、HFB06TB120STRRPBF、HFB06TB120SPBF、HFA06TB120STRRPBF、HFA06TB120STRLPBF。描述及对比如下：
型号 HFB06TB120STRL HFB06TB120STRLPBF HFB06TB120STRR HFB06TB120S HFB06TB120STRRPBF HFB06TB120SPBF HFA06TB120STRRPBF HFA06TB120STRLPBF
描述 Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
是否Rohs认证 不符合 符合 不符合 不符合 符合 符合 符合 符合
厂商名称 International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ）
零件包装代码 TO-263 TO-263 TO-263 TO-263 TO-263 TO-263 TO-263 TO-263
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
针数 3 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
应用 ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY
外壳连接 CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609代码 e0 e3 e0 e0 e3 e3 e3 e3
最大非重复峰值正向电流 80 A 80 A 80 A 80 A 80 A 80 A 80 A 80 A
元件数量 1 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最大输出电流 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 225 260 225 225 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大反向恢复时间 0.08 µs 0.08 µs 0.08 µs 0.08 µs 0.08 µs 0.08 µs 0.08 µs 0.08 µs
表面贴装 YES YES YES YES YES YES YES YES
端子面层 Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb) TIN LEAD MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30 30
Base Number Matches 1 1 1 1 1 1 1 1
ECCN代码 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
湿度敏感等级 1 1 1 - 1 1 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C - -
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C - -
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