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HIP4082IBZ-T

1.4A FULL BRDG BASED MOSFET DRIVER, PDSO16, ROHS COMPLIANT, PLASTIC, MS-012AC, SOIC-16

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Renesas(瑞萨电子)
零件包装代码
SOIC
包装说明
SOP,
针数
16
Reach Compliance Code
compliant
ECCN代码
EAR99
高边驱动器
YES
接口集成电路类型
FULL BRIDGE BASED MOSFET DRIVER
JESD-30 代码
R-PDSO-G16
JESD-609代码
e3
长度
9.9 mm
湿度敏感等级
3
功能数量
1
端子数量
16
最高工作温度
125 °C
最低工作温度
-55 °C
标称输出峰值电流
1.4 A
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.75 mm
最大供电电压
15 V
最小供电电压
8.5 V
标称供电电压
12 V
表面贴装
YES
温度等级
MILITARY
端子面层
Matte Tin (Sn) - annealed
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
断开时间
0.08 µs
接通时间
0.11 µs
宽度
3.9 mm
Base Number Matches
1
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®
HIP4082
Data Sheet
January 3, 2006
FN3676.4
80V, 1.25A Peak Current H-Bridge
FET Driver
The HIP4082 is a medium frequency, medium voltage
H-Bridge N-Channel MOSFET driver IC, available in 16 lead
plastic SOIC (N) and DIP packages.
Specifically targeted for PWM motor control and UPS
applications, bridge based designs are made simple and
flexible with the HIP4082 H-bridge driver. With operation up
to 80V, the device is best suited to applications of moderate
power levels.
Similar to the HIP4081, it has a flexible input protocol for
driving every possible switch combination except those
which would cause a shoot-through condition. The
HIP4082’s reduced drive current allows smaller packaging
and it has a much wider range of programmable dead times
(0.1 to 4.5µs) making it ideal for switching frequencies up to
200kHz. The HIP4082 does not contain an internal charge
pump, but does incorporate non-latching level-shift
translation control of the upper drive circuits.
This set of features and specifications is optimized for
applications where size and cost are important. For
applications needing higher drive capability the HIP4080A
and HIP4081A are recommended.
Features
• Independently Drives 4 N-Channel FET in Half Bridge or
Full Bridge Configurations
• Bootstrap Supply Max Voltage to 95VDC
• Drives 1000pF Load in Free Air at 50°C with Rise and Fall
Times of Typically 15ns
• User-Programmable Dead Time (0.1 to 4.5µs)
• DIS (Disable) Overrides Input Control and Refreshes
Bootstrap Capacitor when Pulled Low
• Input Logic Thresholds Compatible with 5V to 15V Logic
Levels
• Shoot-Through Protection
• Undervoltage Protection
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• UPS Systems
• DC Motor Controls
• Full Bridge Power Supplies
• Switching Power Amplifiers
• Noise Cancellation Systems
Ordering Information
PART
NUMBER
HIP4082IB*
PART
TEMP.
MARKING RANGE (°C)
HIP4082IB
PACKAGE
PKG.
DWG. #
• Battery Powered Vehicles
• Peripherals
• Medium/Large Voice Coil Motors
• Related Literature
- TB363, Guidelines for Handling and Processing
Moisture Sensitive Surface Mount Devices (SMDs)
-55 to +125 16 Ld SOIC (N) M16.15
-55 to +125 16 Ld SOIC (N) M16.15
(Pb-free)
-55 to +125 16 Ld PDIP
E16.3
E16.3
HIP4082IBZ* 4082IBZ
(Note)
HIP4082IP
HIP4082IP
HIP4082IPZ HIP4082IPZ -55 to +125 16 Ld PDIP**
(Note)
(Pb-free)
*Add “-T” suffix for tape and reel.
Pinout
HIP4082
(PDIP, SOIC)
TOP VIEW
BHB
1
BHI
2
BLI
3
ALI
4
DEL
5
V
SS
6
16
BHO
15
BHS
14
BLO
13
ALO
12
V
DD
11
AHS
10
AHO
9
AHB
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of IPC/
JEDEC J STD-020.
**Pb-free PDIPs can be used for through hole wave solder
processing only. They are not intended for use in Reflow solder
processing applications.
AHI
7
DIS
8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Harris Corporation 1995. Copyright Intersil Americas Inc. 2003-2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HIP4082
Application Block Diagram
80V
12V
BHO
BHS
BHI
BLI
HIP4082
ALI
AHI
ALO
AHS
AHO
BLO
LOAD
GND
GND
Functional Block Diagram
9
U/V
BHI
2
LEVEL
SHIFT
DRIVER
10 AHO BHO 16
AHB BHB
1
DRIVER
LEVEL
SHIFT
U/V
11 AHS
BHS 15
AHI
7
TURN-ON
DELAY
TURN-ON
DELAY
DIS
8
V
DD
V
DD
12
DETECTOR
UNDERVOLTAGE
DRIVER
TURN-ON
DELAY
13 ALO
BLO 14
DRIVER
TURN-ON
DELAY
ALI
DEL
BLI
V
SS
4
5
3
6
2
FN3676.4
January 3, 2006
HIP4082
Typical Application (PWM Mode Switching)
80V
1
BHB
12V
PWM
INPUT
DELAY RESISTOR
2
BHI
3
BLI
4
ALI
5
DEL
6
V
SS
7
AHI
DIS
8
DIS
BHO
16
BHS
15
BLO
14
ALO
13
V
DD
12
AHS
11
AHO
10
AHB
9
12V
LOAD
FROM
OPTIONAL
OVERCURRENT
LATCH
GND
R
DIS
TO OPTIONAL
CURRENT CONTROLLER OR
OVERCURRENT LATCH
+
-
R
SH
GND
3
FN3676.4
January 3, 2006
HIP4082
Absolute Maximum Ratings
Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
Logic I/O Voltages . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V
DD
+0.3V
Voltage on AHS, BHS . . . . . -6V (Transient) to 80V (25°C to 150°C)
Voltage on AHS, BHS . . . . . -6V (Transient) to 70V (-55°C to150°C)
Voltage on AHB, BHB . . . . . . . . V
AHS, BHS
-0.3V to V
AHS, BHS
+V
DD
Voltage on ALO, BLO. . . . . . . . . . . . . . . . . . V
SS
-0.3V to V
DD
+0.3V
Voltage on AHO, BHO . . . V
AHS, BHS
-0.3V to V
AHB, BHB
+0.3V Input
Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5mA to 0mA
Phase Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns
NOTE: All voltages are relative V
SS
unless otherwise specified.
Thermal Information
Thermal Resistance
θ
JA
(°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
115
DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . See Curve
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Max. Junction Temperature. . . . . . . . . . . . . . . . . . +150°C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300°C
(For SOIC - Lead Tips Only))
Operating Conditions
Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . +8.5V to +15V
Voltage on V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +1.0V
Voltage on AHB, BHB . . . . . . . . V
AHS, BHS
+7.5V to V
AHS, BHS
+V
DD
Input Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . -4mA to -100µA
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
V
DD
= V
AHB
= V
BHB
= 12V, V
SS
= V
AHS
= V
BHS
= 0V, R
DEL
= 100K
T
J
= +25°C
T
J
= -55°C
TO +150°C
MIN
MAX UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
SUPPLY CURRENTS & UNDER VOLTAGE PROTECTION
V
DD
Quiescent Current
I
DD
All inputs = 0V, R
DEL
= 100K
All inputs = 0V, R
DEL
= 10K
V
DD
Operating Current
I
DDO
f = 50kHz, no load
50kHz, no load, R
DEL
= 10kΩ
AHB, BHB Off Quiescent Current
AHB, BHB On Quiescent Current
AHB, BHB Operating Current
AHS, BHS Leakage Current
I
AHBL
, I
BHBL
I
AHBH
, I
BHBH
I
AHBO
, I
BHBO
I
HLK
AHI = BHI = 0V
AHI = BHI = V
DD
f = 50kHz, CL = 1000pF
V
AHS
= V
BHS
= 80V
V
AHB
= V
BHB
= 96
V
DD
= Not Connected
1.2
2.2
1.5
2.5
0.5
65
.65
-
2.3
4.0
2.6
4.0
1.0
145
1.1
-
3.5
5.5
4.0
6.4
1.5
240
1.8
1.0
0.85
1.9
1.1
2.1
0.4
40
.45
-
4
6.0
4.2
6.6
1.6
250
2.0
-
mA
mA
mA
mA
mA
µA
mA
µA
V
DD
Rising Undervoltage Threshold
V
DD
Falling Undervoltage Threshold
Undervoltage Hysteresis
AHB, BHB Undervoltage Threshold
INPUT PINS: ALI, BLI, AHI, BHI, & DIS
Low Level Input Voltage
High Level Input Voltage
Input Voltage Hysteresis
Low Level Input Current
High Level Input Current
TURN-ON DELAY PIN DEL
Dead Time
V
DDUV+
V
DDUV-
UVHYS
VHBUV
Referenced to AHS & BHS
6.8
6.5
0.17
5
7.6
7.1
0.4
6.0
8.25
7.8
0.75
7
6.5
6.25
0.15
4.5
8.5
8.1
0.90
7.5
V
V
V
V
V
IL
V
IH
Full Operating Conditions
Full Operating Conditions
-
2.5
-
-
-
35
-100
-
1.0
-
-
-60
+1
-
2.7
-
-150
-10
0.8
V
V
-
-50
+10
mV
µA
µA
I
IL
I
IH
V
IN
= 0V, Full Operating Conditions
V
IN
= 5V, Full Operating Conditions
-145
-1
T
DEAD
R
DEL
= 100K
R
DEL
= 10K
2.5
0.27
4.5
0.5
8.0
0.75
2.0
0.2
8.5
0.85
µs
µs
4
FN3676.4
January 3, 2006
HIP4082
Electrical Specifications
V
DD
= V
AHB
= V
BHB
= 12V, V
SS
= V
AHS
= V
BHS
= 0V, R
DEL
= 100K
(Continued)
T
J
= +25°C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
T
J
= -55°C
TO +150°C
MIN
MAX UNITS
GATE DRIVER OUTPUT PINS: ALO, BLO, AHO, & BHO
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
V
OL
V
DD
-V
OH
I
O
+
I
O
-
I
OUT
= 50mA
I
OUT
= -50mA
V
OUT
= 0V
V
OUT
= 12V
0.65
0.7
1.1
1.0
1.4
1.3
1.1
1.2
2.5
2.3
0.5
0.5
0.85
0.75
1.2
1.3
2.75
2.5
V
V
A
A
Switching Specifications
V
DD
= V
AHB
= V
BHB
= 12V, V
SS
= V
AHS
= V
BHS
= 0V, R
DEL
= 100K, C
L
= 1000pF.
T
J
= +25°C
T
J
= -55°C TO
+150°C
MIN
-
-
-
-
-
-
50
MAX
70
100
100
150
25
25
-
80
80
100
70
2
900
-
-
-
-
350
90
125
100
3
950
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
PARAMETER
Lower Turn-off Propagation Delay
(ALI-ALO, BLI-BLO)
Upper Turn-off Propagation Delay
(AHI-AHO, BHI-BHO)
Lower Turn-on Propagation Delay
(ALI-ALO, BLI-BLO)
Upper Turn-on Propagation Delay
(AHI-AHO, BHI-BHO)
Rise Time
Fall Time
Minimum Input Pulse Width
Output Pulse Response to 50 ns Input Pulse
Disable Turn-off Propagation Delay
(DIS - Lower Outputs)
Disable Turn-off Propagation Delay
(DIS - Upper Outputs)
Disable Turn-on Propagation Delay
(DIS - ALO & BLO)
Disable Turn-on Propagation Delay
(DIS- AHO & BHO)
Refresh Pulse Width (ALO & BLO)
SYMBOL
T
LPHL
T
HPHL
T
LPLH
T
HPLH
T
R
T
F
T
PWIN-ON/OFF
T
PWOUT
TEST CONDITIONS
MIN
-
-
-
-
-
-
50
TYP
25
55
40
75
9
9
-
63
MAX
50
80
85
110
20
20
-
T
DISLOW
T
DISHIGH
T
DLPLH
T
DHPLH
T
REF-PW
TRUTH TABLE
INPUT
R
DEL
= 10K
-
-
-
-
375
50
75
40
1.2
580
OUTPUT
VHBUV
X
X
1
X
0
0
DIS
1
X
0
0
0
0
ALO, BLO
0
0
0
1
0
0
AHO, BHO
0
0
0
0
1
0
ALI, BLI
X
X
0
1
0
0
NOTE:
AHI, BHI
X
X
X
X
1
0
VDDUV
X
1
0
0
0
0
X signifies that input can be either a “1” or “0”.
5
FN3676.4
January 3, 2006
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参数对比
与HIP4082IBZ-T相近的元器件有:HIP4082IB-T。描述及对比如下:
型号 HIP4082IBZ-T HIP4082IB-T
描述 1.4A FULL BRDG BASED MOSFET DRIVER, PDSO16, ROHS COMPLIANT, PLASTIC, MS-012AC, SOIC-16 1.4A FULL BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, MS-012AC, SOIC-16
是否无铅 不含铅 含铅
是否Rohs认证 符合 不符合
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子)
零件包装代码 SOIC SOIC
包装说明 SOP, PLASTIC, MS-012AC, SOIC-16
针数 16 16
Reach Compliance Code compliant not_compliant
ECCN代码 EAR99 EAR99
高边驱动器 YES YES
接口集成电路类型 FULL BRIDGE BASED MOSFET DRIVER FULL BRIDGE BASED MOSFET DRIVER
JESD-30 代码 R-PDSO-G16 R-PDSO-G16
JESD-609代码 e3 e0
长度 9.9 mm 9.9 mm
湿度敏感等级 3 1
功能数量 1 1
端子数量 16 16
最高工作温度 125 °C 125 °C
最低工作温度 -55 °C -55 °C
标称输出峰值电流 1.4 A 1.4 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 240
认证状态 Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm
最大供电电压 15 V 15 V
最小供电电压 8.5 V 8.5 V
标称供电电压 12 V 12 V
表面贴装 YES YES
温度等级 MILITARY MILITARY
端子面层 Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING
端子节距 1.27 mm 1.27 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 30 NOT SPECIFIED
断开时间 0.08 µs 0.08 µs
接通时间 0.11 µs 0.11 µs
宽度 3.9 mm 3.9 mm
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