型号
- 型号
- 关键词
| 型号 | HM4-65262-9 | BTA410X-600BT | HM4-65262C-9 | HM1-65262C-9 |
|---|---|---|---|---|
| 描述 | IC,SRAM,16KX1,CMOS,LLCC,20PIN,CERAMIC | 3Q Hi-Com Triac | IC,SRAM,16KX1,CMOS,LLCC,20PIN,CERAMIC | IC,SRAM,16KX1,CMOS,DIP,20PIN,CERAMIC |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | - | not_compliant | not_compliant |
| 最长访问时间 | 85 ns | - | 85 ns | 85 ns |
| I/O 类型 | SEPARATE | - | SEPARATE | SEPARATE |
| JESD-30 代码 | R-XQCC-N20 | - | R-XQCC-N20 | R-XDIP-T20 |
| JESD-609代码 | e0 | - | e0 | e0 |
| 内存密度 | 16384 bit | - | 16384 bit | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM | - | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | - | 1 | 1 |
| 端子数量 | 20 | - | 20 | 20 |
| 字数 | 16384 words | - | 16384 words | 16384 words |
| 字数代码 | 16000 | - | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | - | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | - | -40 °C | -40 °C |
| 组织 | 16KX1 | - | 16KX1 | 16KX1 |
| 输出特性 | 3-STATE | - | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | - | CERAMIC | CERAMIC |
| 封装代码 | QCCN | - | QCCN | DIP |
| 封装等效代码 | LCC20,.3X.43 | - | LCC20,.3X.43 | DIP20,.3 |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | - | CHIP CARRIER | IN-LINE |
| 并行/串行 | PARALLEL | - | PARALLEL | PARALLEL |
| 电源 | 5 V | - | 5 V | 5 V |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified |
| 最大待机电流 | 0.00002 A | - | 0.0004 A | 0.0004 A |
| 最小待机电流 | 2 V | - | 2 V | 2 V |
| 最大压摆率 | 0.104 mA | - | 0.104 mA | 0.104 mA |
| 标称供电电压 (Vsup) | 5 V | - | 5 V | 5 V |
| 表面贴装 | YES | - | YES | NO |
| 技术 | CMOS | - | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | - | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | - | NO LEAD | THROUGH-HOLE |
| 端子节距 | 1.27 mm | - | 1.27 mm | 2.54 mm |
| 端子位置 | QUAD | - | QUAD | DUAL |
| Base Number Matches | 1 | - | 1 | 1 |