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HM6207HLJP-25

Standard SRAM, 256KX1, 25ns, CMOS, PDSO24, 0.300 INCH, SOJ-24

器件类别:存储    存储   

厂商名称:Hitachi (Renesas )

厂商官网:http://www.renesas.com/eng/

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器件参数
参数名称
属性值
厂商名称
Hitachi (Renesas )
零件包装代码
SOJ
包装说明
SOJ, SOJ24,.34
针数
24
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
25 ns
其他特性
TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP
I/O 类型
SEPARATE
JESD-30 代码
R-PDSO-J24
长度
15.63 mm
内存密度
262144 bit
内存集成电路类型
STANDARD SRAM
内存宽度
1
功能数量
1
端子数量
24
字数
262144 words
字数代码
256000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX1
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ24,.34
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
电源
5 V
认证状态
Not Qualified
座面最大高度
3.76 mm
最大待机电流
0.0001 A
最小待机电流
2 V
最大压摆率
0.12 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
宽度
7.62 mm
文档预览
HM6207H Series
256 k High Speed SRAM (256-kword
×
1-bit)
Features
Single 5 V supply and high density 24-pin package
High speed
Access time: 25/35/45 ns (max)
Low power
Operation: 300 mW (typ)
Standby: 100 µW (typ)
30 µW (typ) (L-version)
Completely static memory required, no clock or timing strobe required
Equal access and cycle time
Directly TTL compatible, all inputs and outputs
Battery backup operation capability (L-version)
Ordering Information
Type No.
HM6207HP-25
HM6207HP-35
HM6207HP-45
HM6207HLP-25
HM6207HLP-35
HM6207HLP-45
HM6207HJP-25
HM6207HJP-35
HM6207HJP-45
HM6207HLJP-25
HM6207HLJP-35
HM6207HLJP-45
Access Time
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
300-mil 24-pin SOJ (CP-24D)
Package
300-mil 24-pin plastic DIP (DP-24NC)
HM6207H Series
Pin Arrangement
A17
A0
A1
A2
A3
A4
A5
A6
A7
Dout
WE
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
(Top view)
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A16
A15
A14
A13
A12
A11
A10
A9
A8
Din
CS
Pin Description
Pin Name
A0–AI7
Din
Dout
&6
:(
V
CC
V
SS
Function
Address
Data input
Data output
Chip select
Write enable
Power supply
Ground
2
HM6207H Series
Block Diagram
A15
A16
A17
A0
A1
A2
A3
A4
Din
Row
decoder
Memory array
256
×
1024
V
CC
V
SS
Column I/O
Column decoder
Dout
CS
WE
A9 A14 A13 A12A11 A10 A8 A7 A6 A5
Function Table
&6
H
L
L
:(
×
H
L
Mode
Not selected
Read
Write
V
CC
Current I/O Pin
I
SB
, I
SB1
l
CC
I
CC
High-Z
Dout
High-Z
Ref. Cycle
Read cycle
Write cycle
Note:
×
= Don’t care.
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature range
Storage temperature range
Storage temperature range under bias
Note:
Symbol
Vin
P
T
Topr
Tstg
Tbias
Value
–0.5 to +7.0
1.0
0 to +70
–55 to +125
–10 to +85
*1
Unit
V
W
°C
°C
°C
1. Vin min = –2.5 V for pulse width < 10 ns.
3
HM6207H Series
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high (logic 1) voltage
Input low (logic 0) voltage
Note:
V
IH
V
IL
Min
4.5
0
2.2
–0.5
*1
Typ
5.0
0
Max
5.5
0
6.0
0.8
Unit
V
V
V
V
1. V
IL
min = –2.0 V for pulse width
10 ns.
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V ±10%, V
SS
= 0 V)
HM6207H-25
Parameter
Input leakage current
Output leakage current
Operating power supply
current
Symbol Min
I
LI
I
LO
l
CC
I
CC1
Typ
60
40
*1
HM6207H-35/45
Max Min Typ
2.0
50
40
*1
Max Unit Test Conditions
2.0
µA
V
CC
= Max,
Vin = V
SS
to V
CC
&6
= V
IH
,
V
I/O
= V
SS
to V
CC
&6
= V
IL
, I
I/O
= 0 mA,
min cycle, duty = 100%
&6
= V
IL
, l
I/O
= 0 mA,
t cycle = 50 ns,
duty = 100%
&6
= V
IH
, min cycle
&6
V
CC
– 0.2 V,
0 V
Vin < 0.2, or
Vin
V
CC
– 0.2 V
10.0 —
120 —
80
10.0 µA
100
80
mA
mA
Standby power supply current I
SB
Standby power supply
current (1)
I
SB1
20
0.02
40
2.0
15
0.02
30
2.0
mA
mA
L-
Version
Output low voltage
Output high voltage
Note:
V
OL
V
OH
2.4
0.006 0.1
0.4
2.4
0.006 0.1
0.4
V
V
I
OL
= 8 mA
I
OH
= –4.0 mA
1. Typical values are at V
CC
= 5.0 V, Ta = +25°C and not guaranteed.
Capacitance
(Ta = 25°C, f = 1 MHz)
*1
Parameter
Input capacitance
Output capacitance
Note:
Symbol
Cin
Cout
Min
Max
6
10
Unit
pF
pF
Test Conditions
Vin = 0 V
Vout = 0 V
1. This parameter is sampled and is not 100% tested.
4
HM6207H Series
AC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V ± 10% unless otherwise noted)
Test Conditions
Input pulse levels: V
SS
to 3.0 V
Input and output timing reference levels: 1.5 V
Input rise and fall time: 5 ns
Output load: See figures
+5V
480
+5V
480
Dout
255
Dout
255
30 pF
*1
5 pF
*1
Output load (A)
Output load (B)
(t
HZ
, t
LZ
, t
WZ,
and t
OW
)
Note: 1. Including scope and jig
Read Cycle
HM6207H-25
Parameter
Read cycle time
Address access time
Chip select access time
Output hold from address change
Chip selection to output in low-Z
Chip deselection to output in high-Z
Note:
Symbol
t
RC
t
AA
t
ACS
t
OH
t
LZ
*1
HM6207H-35
Min
35
5
5
0
Max
35
35
20
HM6207H-45
Min
45
5
5
0
Max
45
45
20
Unit
ns
ns
ns
ns
ns
ns
Min
25
5
5
0
Max
25
25
15
t
HZ
*1
1. Transition is measured ± 200 mV from steady-state voltage with Load (B).
These parameters are sampled and not 100% tested.
5
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参数对比
与HM6207HLJP-25相近的元器件有:HM6207HJP-45、HM6207HLJP-45、HM6207HLP-25、HM6207HP-25、HM6207HJP-35。描述及对比如下:
型号 HM6207HLJP-25 HM6207HJP-45 HM6207HLJP-45 HM6207HLP-25 HM6207HP-25 HM6207HJP-35
描述 Standard SRAM, 256KX1, 25ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Standard SRAM, 256KX1, 45ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Standard SRAM, 256KX1, 45ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Standard SRAM, 256KX1, 25ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24 Standard SRAM, 256KX1, 25ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24 Standard SRAM, 256KX1, 35ns, CMOS, PDSO24, 0.300 INCH, SOJ-24
厂商名称 Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas )
零件包装代码 SOJ SOJ SOJ DIP DIP SOJ
包装说明 SOJ, SOJ24,.34 SOJ, SOJ24,.34 SOJ, SOJ24,.34 DIP, DIP24,.3 DIP, DIP24,.3 SOJ, SOJ24,.34
针数 24 24 24 24 24 24
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 25 ns 45 ns 45 ns 25 ns 25 ns 35 ns
其他特性 TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP
I/O 类型 SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE
JESD-30 代码 R-PDSO-J24 R-PDSO-J24 R-PDSO-J24 R-PDIP-T24 R-PDIP-T24 R-PDSO-J24
长度 15.63 mm 15.63 mm 15.63 mm 29.88 mm 29.88 mm 15.63 mm
内存密度 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 1 1 1 1 1 1
功能数量 1 1 1 1 1 1
端子数量 24 24 24 24 24 24
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX1 256KX1 256KX1 256KX1 256KX1 256KX1
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ SOJ DIP DIP SOJ
封装等效代码 SOJ24,.34 SOJ24,.34 SOJ24,.34 DIP24,.3 DIP24,.3 SOJ24,.34
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 3.76 mm 3.76 mm 3.76 mm 5.08 mm 5.08 mm 3.76 mm
最大待机电流 0.0001 A 0.002 A 0.0001 A 0.0001 A 0.002 A 0.002 A
最小待机电流 2 V 4.5 V 2 V 2 V 4.5 V 4.5 V
最大压摆率 0.12 mA 0.1 mA 0.1 mA 0.12 mA 0.12 mA 0.1 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES NO NO YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 J BEND J BEND J BEND THROUGH-HOLE THROUGH-HOLE J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
宽度 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm
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