HMC311ST89
/
311ST89E
v03.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
Features
P1dB Output Power: +15.5 dBm
Output IP3: +31.5 dBm
Gain: 16 dB
50 Ohm I/O’s
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer’s Kit
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
The HMC311ST89(E) is ideal for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio
Functional Diagram
General Description
The HMC311ST89(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 6 GHz amplifier. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +16.5 dBm output power. The
HMC311ST89(E) offers 16 dB of gain and an output
IP3 of +31.5 dBm while requiring only 54 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifi cations,
Vs= 5V, Rbias= 22 Ohm, T
A
= +25° C
Parameter
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 2.0 GHz
2.0 - 5.0 GHz
5.0 - 6.0 GHz
DC - 6 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 4 GHz
4.0 - 6.0 GHz
13.5
12.0
10.0
Min.
14.0
13.0
12.5
Typ.
16.0
15.0
14.5
0.004
0.007
0.012
8
7
8
20
15.5
15.0
13.0
31.5
30
27
24
4.5
5
55
74
0.007
0.012
0.016
Max.
Units
dB
dB
dB
dB/ °C
dB/ °C
dB/ °C
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8 - 20
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC311ST89 / 311ST89E
v03.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Broadband Gain & Return Loss
20
15
RESPONSE (dB)
10
S21
S11
S22
Gain vs. Temperature
20
18
16
GAIN (dB)
14
12
10
8
6
4
+25 C
+85 C
-40 C
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8 - 21
5
0
-5
-10
-15
-20
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
-5
-10
-15
+25 C
+85 C
-40 C
-15
+25 C
+85 C
-40 C
-20
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
-20
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
10
+25 C
+85 C
-40 C
-5
+25 C
+85 C
-40 C
8
NOISE FIGURE (dB)
-10
6
-15
4
-20
2
-25
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC311ST89 / 311ST89E
v03.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
P1dB vs. Temperature
Psat vs. Temperature
18
16
14
Psat (dBm)
12
10
8
6
4
+25 C
+85 C
-40 C
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
P1dB (dBm)
18
16
14
12
10
8
6
4
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
Power Compression @ 1 GHz
18
Pout (dBm), GAIN (dB), PAE (%)
14
12
10
8
6
4
2
0
-2
-4
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Power Compression @ 6 GHz
18
Pout (dBm), GAIN (dB), PAE (%)
16
14
12
10
8
6
4
2
0
-2
-4
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
16
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34
30
26
IP3 (dBm)
22
18
14
10
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Gain, Power, OIP3 & Supply Current vs.
Supply Voltage @ 1 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
40
35
30
25
20
15
10
5
4.5
4.75
5
Vs (Vdc)
5.25
Icq
Gain
P1dB
Psat
IP3
80
70
60
50
40
30
20
10
5.5
Icq (mA)
8 - 22
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC311ST89 / 311ST89E
v03.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +3.9V)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+7V
+10 dBm
150 °C
0.34 W
191 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC311ST89
HMC311ST89E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H311
XXXX
H311
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 23
HMC311ST89 / 311ST89E
v03.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Pin Descriptions
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias for the output stage.
2, 4
GND
These pins and package bottom must be connected to RF/
DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.8
Rbias
Recommended Component Values
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
3.3 nH
100 pF
5800
3.3 nH
100 pF
8 - 24
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
