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HMC478MP86ETR

RF Amplifier SiGe HBT Gain Block amp SMT DC - 4 GHz

器件类别:热门应用    无线/射频/通信   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

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器件参数
参数名称
属性值
产品种类
Product Category
RF Amplifier
制造商
Manufacturer
ADI(亚德诺半导体)
RoHS
Details
类型
Type
HBT Gain Block
技术
Technology
SiGe
Operating Frequency
DC to 4 GHz
Gain
22 dB
NF - Noise Figure
2.5 dB
P1dB - Compression Point
18 dBm
OIP3 - Third Order Intercept
32 dBm
工作电源电压
Operating Supply Voltage
5 V
工作电源电流
Operating Supply Current
62 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
Micro-P-4
系列
Packaging
Reel
系列
Packaging
MouseReel
系列
Packaging
Cut Tape
Frequency Range
DC to 4 GHz
Input Return Loss
15 dB
Number of Channels
1 Channel
Pd-功率耗散
Pd - Power Dissipation
0.583 W
产品
Product
SiGe
工厂包装数量
Factory Pack Quantity
500
文档预览
HMC478SC70
/
478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Typical Applications
The HMC478SC70(E) is an ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
v02.0814
8
Amplifiers - Driver & GAin Block - smT
Features
P1dB Output Power: +17 dBm
Gain: 23 dB
Output IP3: +31 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SC70 Package
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC478SC70(E) is a SiGe Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4 GHz. This industry
standard SC70 packaged amplifier can be used as
a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +17 dBm output power.
The HMC478SC70(E) offers 23 dB of gain with a
+31 dBm output IP3 at 850 MHz while requiring only
62 mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifications,
Vs= 5V, Rbias= 18 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 4 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
DC - 4 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
13
11
9
Min.
20
16
13
11
Typ.
24
20
17
15
0.015
15
17
15
13
20
16
15
12
31
28
25
2.5
2.8
62
82
0.02
Max.
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
8-1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price,
Analog Devices for
to place
any infringements of patents or other
For price,
Alpha Road,
to place orders: Analog Devices, Inc.,
20
delivery, and
responsibility is assumed by
delivery and
its use, nor for
orders: Analog Devices, Inc.,
Technology Way, P.O.
Chelmsford, MA 01824
One
Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
Application Support: Phone: 978-250-3343 or apps@hittite.com
the property of their respective owners.
HMC478SC70
/
478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Broadband Gain & Return Loss
30
20
RESPONSE (dB)
10
0
-10
-20
-30
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
S21
S11
S22
v02.0814
Gain vs. Temperature
30
25
20
GAIN (dB)
15
10
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
8
Amplifiers - Driver & GAin Block - smT
8-2
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
S21
S11
S22
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-5
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
Noise Figure vs. Temperature
10
8
NOISE FIGURE (dB)
+25C
+85C
-40C
6
4
2
0
0
1
2
3
4
5
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price,
Analog Devices for
to place
any infringements of patents or other
For price,
Alpha Road,
to place orders: Analog Devices, Inc.,
20
delivery, and
responsibility is assumed by
delivery and
its use, nor for
orders: Analog Devices, Inc.,
Technology Way, P.O.
Chelmsford, MA 01824
One
Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
Application Support: Phone: 978-250-3343 or apps@hittite.com
the property of their respective owners.
HMC478SC70
/
478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
P1dB vs. Temperature
24
20
16
12
8
4
0
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
v02.0814
8
Amplifiers - Driver & GAin Block - smT
Psat vs. Temperature
24
20
16
12
8
4
0
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
P1dB (dBm)
Output IP3 vs. Temperature
35
Gain, Power & Output IP3 vs. Supply
Voltage for Rs = 18 Ohms @ 850 MHz
34
32
30
28
26
24
22
20
18
16
14
12
10
8
4.75
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
30
IP3 (dBm)
25
+25C
+85C
-40C
20
Psat (dBm)
15
Gain
P1dB
Psat
IP3
10
0
1
2
3
4
5
FREQUENCY (GHz)
5
Vs (Vdc)
5.25
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V,
R
bias
= 18 Ohms
80
75
70
Icc (mA)
65
60
55
50
45
40
3.60
-40C
+25C
+85C
3.70
3.80
3.90
Vcc (V)
4.00
4.10
4.20
8-3
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price,
Analog Devices for
to place
any infringements of patents or other
For price,
Alpha Road,
to place orders: Analog Devices, Inc.,
20
delivery, and
responsibility is assumed by
delivery and
its use, nor for
orders: Analog Devices, Inc.,
Technology Way, P.O.
Chelmsford, MA 01824
One
Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
Application Support: Phone: 978-250-3343 or apps@hittite.com
the property of their respective owners.
HMC478SC70
/
478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +2.4 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6 Vdc
100 mA
+5 dBm
150 °C
0.583 W
111.5 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
v02.0814
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
Amplifiers - Driver & GAin Block - smT
8-4
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC478SC70
HMC478SC70E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
478E
478E
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price,
Analog Devices for
to place
any infringements of patents or other
For price,
Alpha Road,
to place orders: Analog Devices, Inc.,
20
delivery, and
responsibility is assumed by
delivery and
its use, nor for
orders: Analog Devices, Inc.,
Technology Way, P.O.
Chelmsford, MA 01824
One
Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
Application Support: Phone: 978-250-3343 or apps@hittite.com
the property of their respective owners.
HMC478SC70
/
478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Pin Descriptions
Pin Number
1, 2, 4, 5
Function
GND
Description
These pins must be connected to RF/DC ground.
Interface Schematic
v02.0814
8
Amplifiers - Driver & GAin Block - smT
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
6
RFOUT
RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
bias
V
alue
R
bias
P
ower
r
ating
5V
18 Ω
1/8 W
6V
35 Ω
1/4 W
8V
67 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
bias
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
Frequency (MHz)
50
270 nH
0.01 µF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
8-5
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price,
Analog Devices for
to place
any infringements of patents or other
For price,
Alpha Road,
to place orders: Analog Devices, Inc.,
20
delivery, and
responsibility is assumed by
delivery and
its use, nor for
orders: Analog Devices, Inc.,
Technology Way, P.O.
Chelmsford, MA 01824
One
Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
Application Support: Phone: 978-250-3343 or apps@hittite.com
the property of their respective owners.
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参数对比
与HMC478MP86ETR相近的元器件有:118039-HMC478SC70、110161-HMC478ST89、110170-HMC478MP86、HMC478ST89E、HMC478ST89TR。描述及对比如下:
型号 HMC478MP86ETR 118039-HMC478SC70 110161-HMC478ST89 110170-HMC478MP86 HMC478ST89E HMC478ST89TR
描述 RF Amplifier SiGe HBT Gain Block amp SMT DC - 4 GHz RF Development Tools Eval PCB RF Development Tools Eval PCB RF Development Tools Eval PCB RF Amplifier SiGe HBT Gain Block amp SMT DC - 4 GHz RF Amplifier SiGe HBT Gain Block amp SMT DC - 4 GHz
产品种类
Product Category
RF Amplifier RF Development Tools RF Development Tools RF Development Tools RF Amplifier RF Amplifier
制造商
Manufacturer
ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体)
RoHS Details Details Details Details Details No
工厂包装数量
Factory Pack Quantity
500 1 1 1 50 500
类型
Type
HBT Gain Block RF Amplifiers RF Amplifiers RF Amplifiers HBT Gain Block -
工作电源电压
Operating Supply Voltage
5 V 5 V to 8 V 5 V to 8 V 5 V to 8 V 5 V -
系列
Packaging
Cut Tape Bulk Bulk Bulk Reel Reel
产品
Product
SiGe Evaluation Boards Evaluation Boards Evaluation Boards SiGe -
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