SMD Type
PNP Transistors
HN1A01FU
(KN1A01FU )
Transistors
■
Features
●
High voltage and high current
●
High h
FE
: h
FE
= 120~400
●
Excellent hFE linearity
●
Small package (Dual type)
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Rating
-50
-50
-5
-150
-30
200
125
-55 to 125
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -50 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-100 mA, I
B
=-10mA
I
C
=-100 mA, I
B
=-10mA
V
CE
= -6V, I
C
= -2mA
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
C
= -1mA
80
120
Min
-50
-50
-5
-100
-100
-0.3
-1.2
400
7
pF
MHz
nA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
HN1A01FU-Y
120-240
D1Y
HN1A01FU-G
200-400
D1G
www.kexin.com.cn
1
SMD Type
PNP Transistors
HN1A01FU
■
Typical Characterisitics
Transistors
(KN1A01FU )
2
www.kexin.com.cn
