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HN1B04FE-GR,LF(T

tran pnp/npn -50v -0.15a es6

器件类别：半导体    分立半导体   

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
Datasheets
HN1B04FE
Product Photos
SOT-563
Standard Package
4,000
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Arrays
系列
Packaging
Tape & Reel (TR)
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
100mW
Frequency - Transiti
80MHz
Mounting Type
Surface Mou
封装 / 箱体
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Dynamic Catalog
NPN, PNP Transistor Arrays
Other Names
HN1B04FE-GR(5L,F,THN1B04FE-GR(5LFTTRHN1B04FE-GR(5LFTTR-NDHN1B04FE-GRLF(TTR
文档预览
HN1B04FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN1B04FE
Audio Frequency General Purpose Amplifier Applications
Q1:
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Unit: mm
Q2:
High voltage and high current
: V
CEO
=
−50V,
I
C
=
−150mA
(max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1mA)
/ h
FE
(I
C
=
−2mA)
= 0.95 (typ.)
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
60
50
5
150
30
Unit
V
V
V
mA
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight: 3.0mg (typ.)
Marking
6
Unit
V
V
V
mA
mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−50
−50
−5
−150
−30
Type Name
5
4
hFE Rank
1D
1
2
3
Equivalent Circuit (Top View)
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
100
150
−55
to 150
Unit
mW
°C
°C
6
5
4
Q1
Q2
1
2
3
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
* Total rating
2000-05
1
2014-03-01
HN1B04FE
Q1
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
―
―
120
―
80
―
Typ.
―
―
―
0.1
―
2
Max
0.1
0.1
400
0.25
―
―
V
MHz
pF
Unit
μA
μA
Q2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
Min
―
―
120
―
80
―
Typ.
―
―
―
−0.1
―
4
Max
−0.1
−0.1
400
−0.3
―
―
V
MHz
pF
Unit
μA
μA
Note: h
FE
Classification Y (Y): 120 to 240, GR (G): 200 to 400
( ) Marking Symbol
2
2014-03-01
HN1B04FE
Q1 (NPN transistor)
3
2014-03-01
HN1B04FE
Q2 (PNP transistor)
4
2014-03-01
HN1B04FE
(Q1, Q2 Common)
P
C
*
– Ta
(mW)
COLLECTOR POWER DISSIPATION P
C
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Ta (°C)
*:Total Rating
5
2014-03-01
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参数对比
与HN1B04FE-GR,LF(T相近的元器件有：HN1B04FE-Y,LF、HN1B04FE-GR,LF、HN1B04FE-GR、HN1B04FE-Y、HN1B04FEY、HN1B04FE-Y(T5LUPTF。描述及对比如下：
型号 HN1B04FE-GR,LF(T HN1B04FE-Y,LF HN1B04FE-GR,LF HN1B04FE-GR HN1B04FE-Y HN1B04FEY HN1B04FE-Y(T5LUPTF
描述 tran pnp/npn -50v -0.15a es6 TRANS NPN/PNP 50V 0.15A ES6 额定功率：100mW 集电极电流Ic：150mA 集射极击穿电压Vce：50V 晶体管类型：NPN,PNP NPN/PNP，Vceo=±50V,Ic=±0.15A TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
包装说明 - SMALL OUTLINE, R-PDSO-F6 - SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code - unknown - unknown unknown unknown unknown
最大集电极电流 (IC) - 0.15 A - 0.15 A 0.15 A 0.15 A 0.15 A
集电极-发射极最大电压 - 50 V - 50 V 50 V 50 V 50 V
配置 - SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) - 120 - 200 120 120 120
JESD-30 代码 - R-PDSO-F6 - R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
元件数量 - 2 - 2 2 2 2
端子数量 - 6 - 6 6 6 6
最高工作温度 - 150 °C - 150 °C 150 °C 150 °C -
封装主体材料 - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 - NPN AND PNP - NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP
表面贴装 - YES - YES YES YES YES
端子形式 - FLAT - FLAT FLAT FLAT FLAT
端子位置 - DUAL - DUAL DUAL DUAL DUAL
晶体管应用 - AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 - SILICON - SILICON SILICON SILICON SILICON
标称过渡频率 (fT) - 80 MHz - 80 MHz 80 MHz 80 MHz 80 MHz
厂商名称 - - - Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
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器件捷径:
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