HN58V256A Series
HN58V257A Series
256k EEPROM (32-kword
×
8-bit)
Ready/Busy and
RES
function (HN58V257A)
ADE-203-357D (Z)
Rev. 4.0
Oct. 24, 1997
Description
The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as
32768-word
×
8-bit. They have realized high speed, low power consumption and high reliability by
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also
have a 64-byte page programming function to make their write operations faster.
Features
•
Single 3 V supply: 2.7 to 5.5 V
•
Access time: 120 ns max
•
Power dissipation:
Active: 20 mW/MHz, (typ)
Standby: 110 µW (max)
•
On-chip latches: address, data,
CE, OE, WE
•
Automatic byte write: 10 ms max
•
Automatic page write (64 bytes): 10 ms max
•
Ready/Busy (only the HN58V257A series)
•
Data
polling and Toggle bit
•
Data protection circuit on power on/off
•
Conforms to JEDEC byte-wide standard
•
Reliable CMOS with MNOS cell technology
•
10
5
erase/write cycles (in page mode)
•
10 years data retention
•
Software data protection
•
Write protection by
RES
pin (only the HN58V257A series)
•
Industrial versions (Temperature range: – 20 to 85˚C and – 40 to 85˚C) are also available.
HN58V256A Series, HN58V257A Series
Ordering Information
Type No.
HN58V256AFP-12
HN58V256AT-12
HN58V257AT-12
Access time
120 ns
120 ns
120 ns
Package
400 mil 28-pin plastic SOP (FP-28D)
28-pin plastic TSOP (TFP-28DB)
8
×
14 mm
2
32-pin plastic TSOP (TFP-32DA)
Pin Arrangement
HN58V256AFP Series
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
(Top view)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
15
16
17
18
19
20
21
22
23
24
25
26
27
28
(Top view)
HN58V257AT Series
A2
A1
A0
NC
I/O0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
I/O7
NC
CE
A10
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
(Top view)
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A3
A4
A5
A6
A7
A12
A14
RDY/Busy
V
CC
RES
WE
A13
A8
A9
A11
OE
HN58V256AT Series
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A3
A4
A5
A6
A7
A12
A14
V
CC
WE
A13
A8
A9
A11
OE
2
HN58V256A Series, HN58V257A Series
Pin Description
Pin name
A0 to A14
I/O0 to I/O7
OE
CE
WE
V
CC
V
SS
RDY/Busy*
1
RES*
1
NC
Note:
Function
Address input
Data input/output
Output enable
Chip enable
Write enable
Power supply
Ground
Ready busy
Reset
No connection
1. This function is supported by only the HN58V257A series.
Block Diagram
Note: 1. This function is supported by only the HN58V257A series.
V
CC
V
SS
RES
*
1
OE
CE
WE
RES
*
1
A0
to
I/O0
High voltage generator
to
I/O7
RDY/Busy *
1
I/O buffer
and
input latch
Control logic and timing
Y decoder
Y gating
A5
Address
buffer and
latch
A6
to
X decoder
Memory array
A14
Data latch
3
HN58V256A Series, HN58V257A Series
Operation Table
Operation
Read
Standby
Write
Deselect
Write inhibit
CE
V
IL
V
IH
V
IL
V
IL
×
×
Data
polling
Program reset
V
IL
×
OE
V
IL
×*
2
V
IH
V
IH
×
V
IL
V
IL
×
WE
V
IH
×
V
IL
V
IH
V
IH
×
V
IH
×
RES*
3
V
H
*
1
×
V
H
V
H
×
×
V
H
V
IL
RDY/Busy*
3
High-Z
High-Z
High-Z to V
OL
High-Z
—
—
V
OL
High-Z
I/O
Dout
High-Z
Din
High-Z
—
—
Data out (I/O7)
High-Z
Notes: 1. Refer to the recommended DC operating condition.
2.
×:
Don’t care
3. This function is supported by only the HN58V267A series.
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range*
2
Storage temperature range
Symbol
V
CC
Vin
Topr
Tstg
Value
–0.6 to +7.0
–0.5*
1
to +7.0*
3
0 to +70
–55 to +125
Unit
V
V
°C
°C
Notes: 1. Vin min = –3.0 V for pulse width
≤
50 ns
2. Including electrical characteristics and data retention
3. Should not exceed V
CC
+ 1.0 V.
4
HN58V256A Series, HN58V257A Series
Recommended DC Operating Conditions
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input voltage
V
IL
V
IH
V
H
*
4
Operating temperature
Notes: 1.
2.
3.
4.
Topr
Min
2.7
0
–0.3*
1
1.9*
2
V
CC
– 0.5
0
Typ
3.0
0
—
—
—
—
Max
5.5
0
0.6
Unit
V
V
V
V
CC
+ 0.3*
3
V
V
CC
+ 1.0
70
V
°C
V
IL
min: –1.0 V for pulse width
≤
50 ns.
V
IH
min for V
CC
= 3.6 to 5.5 V is 2.4 V.
V
IH
max: V
CC
+ 1.0 V for pulse width
≤
50 ns.
This function is supported by only the HN58V257A series.
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 2.7 to 5.5 V)
Parameter
Input leakage current
Output leakage current
Standby V
CC
current
Symbol
I
LI
I
LO
I
CC1
I
CC2
Operating V
CC
current
I
CC3
Min
—
—
—
—
—
—
—
—
Output low voltage
Output high voltage
Note:
V
OL
V
OH
—
V
CC
×
0.8
Typ
—
—
—
—
—
—
—
—
—
—
Max
2*
1
2
20
1
8
12
12
30
0.4
—
Unit
µA
µA
µA
mA
mA
mA
mA
mA
V
V
Test conditions
V
CC
= 5.5 V, Vin = 5.5 V
V
CC
= 5.5 V, Vout = 5.5/0.4 V
CE
= V
CC
CE
= V
IH
Iout = 0 mA, Duty = 100%,
Cycle = 1
µs
at V
CC
= 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 1 ns at V
CC
= 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 120
µs
at V
CC
= 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 120 ns at V
CC
= 5.5 V
I
OL
= 2.1 mA
I
OH
= –400
µA
1. I
LI
on
RES
= 100
µA
max (only the HN58V257A series)
5
