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HN58X2464FPIAG

EEPROM, 8KX8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8

器件类别:存储    存储   

厂商名称:Hitachi (Renesas )

厂商官网:http://www.renesas.com/eng/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Hitachi (Renesas )
零件包装代码
SOIC
包装说明
SOP, SOP8,.25
针数
8
Reach Compliance Code
unknown
数据保留时间-最小值
10
耐久性
100000 Write/Erase Cycles
I2C控制字节
1010DDDR
JESD-30 代码
R-PDSO-G8
长度
4.9 mm
内存密度
65536 bit
内存集成电路类型
EEPROM
内存宽度
8
端子数量
8
字数
8192 words
字数代码
8000
最高工作温度
85 °C
最低工作温度
-40 °C
组织
8KX8
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
SERIAL
电源
2/5 V
认证状态
Not Qualified
座面最大高度
1.75 mm
串行总线类型
I2C
最大待机电流
0.000003 A
最大压摆率
0.003 mA
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
宽度
3.9 mm
写保护
HARDWARE
文档预览
HN58X2408FPIAG/HN58X2416FPIAG
HN58X2432FPIAG/HN58X2464FPIAG
Two-wire serial interface
8k EEPROM (1-kword
×
8-bit)/16k EEPROM (2-kword
×
8-bit)
32k EEPROM (4-kword
×
8-bit)/64k EEPROM(8-kword
×
8-bit)
ADE-203-1262A (Z)
Rev. 1.0
Mar. 30, 2001
Description
HN58X24xxFPIAG series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 32-byte page programming function to make their write operation faster.
Features
Single supply: 1.8 V to 5.5 V
Two-wire serial interface (I
2
C
TM
serial bus*
1
)
Clock frequency: 400 kHz
Power dissipation:
Standby: 3 µA(max)
Active (Read): 1 mA(max)
Active (Write): 3 mA(max)
Automatic page write: 32-byte/page
Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
Endurance: 10
5
Cycles (Page write mode)
Data retention: 10 Years
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
Small size packages: SOP-8pin
Shipping tape and reel: 2,500 IC/reel
Temperature range: –40 to +85°C
Note: 1. I
2
C is a trademark of Philips Corporation.
Ordering Information
Type No.
HN58X2408FPIAG
HN58X2416FPIAG
HN58X2432FPIAG
HN58X2464FPIAG
Internal organization
8k bit (1024
×
8-bit)
16k bit (2048
×
8-bit)
32k bit (4096
×
8-bit)
64k bit (8192
×
8-bit)
Operating voltage Frequency
1.8 V to 5.5 V
400 kHz
Package
150 mil 8-pin plastic SOP
(FP-8DB)
Pin Arrangement
8-pin SOP
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
(Top view)
V
CC
WP
SCL
SDA
Pin Description
Pin name
A0 to A2
SCL
SDA
WP
V
CC
V
SS
Function
Device address
Serial clock input
Serial data input/output
Write protect
Power supply
Ground
2
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
Block Diagram
V
CC
V
SS
Address generator
WP
A0, A1, A2
SCL
SDA
Control
logic
High voltage generator
X decoder
Memory array
Y decoder
Y-serect & Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range*
1
Storage temperature range
Symbol
V
CC
Vin
Topr
Tstg
Value
–0.6 to +7.0
–0.5*
2
to +7.0*
3
–40 to +85
–65 to +125
Unit
V
V
˚C
˚C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): –3.0 V for pulse width
50 ns.
3. Should not exceed V
CC
+ 1.0 V.
DC Operating Conditions
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Operating temperature
Note:
V
IH
V
IL
Topr
Min
1.8
0
V
CC
×
0.7
–0.3*
1
–40
Typ
0
Max
5.5
0
V
CC
+ 1.0
V
CC
×
0.3
85
Unit
V
V
V
V
˚C
1. V
IL
(min): –1.0 V for pulse width
50 ns.
3
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
DC Characteristics
(Ta = –40 to +85˚C, V
CC
= 1.8 V to 5.5 V)
Parameter
Input leakage current
Output leakage current
Standby V
CC
current
Read V
CC
current
Write V
CC
current
Output low voltage
Symbol
I
LI
I
LO
I
SB
I
CC1
I
CC2
V
OL2
Min
Typ
1.0
Max
2.0
2.0
3.0
1.0
3.0
0.4
Unit
µA
µA
µA
mA
mA
V
Test conditions
V
CC
= 5.5 V, Vin = 0 to 5.5 V
V
CC
= 5.5 V, Vout = 0 to 5.5 V
Vin = V
SS
or V
CC
V
CC
= 5.5 V, Read at 400 kHz
V
CC
= 5.5 V, Write at 400 kHz
V
CC
= 4.5 to 5.5 V, I
OL
= 1.6 mA
V
CC
= 2.7 to 4.5 V, I
OL
= 0.8 mA
V
CC
= 1.8 to 2.7 V, I
OL
= 0.4 mA
V
CC
= 1.8 to 2.7 V, I
OL
= 0.2 mA
V
OL1
0.2
V
Capacitance
(Ta = 25˚C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
6.0
6.0
Unit
pF
pF
Test
conditions
Vin = 0 V
Vout = 0 V
Input capacitance (A0 to A2, SCL, WP) Cin*
1
Output capacitance (SDA)
Note:
C
I/O
*
1
1. This parameter is sampled and not 100% tested.
4
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
AC Characteristics
(Ta = –40 to +85˚C, V
CC
= 1.8 to 5.5 V)
Test Conditions
Input pules levels:
V
IL
= 0.2
×
V
CC
V
IH
= 0.8
×
V
CC
Input rise and fall time:
20 ns
Input and output timing reference levels: 0.5
×
V
CC
Output load: TTL Gate + 100 pF
Parameter
Clock frequency
Clock pulse width low
Clock pulse width high
Noise suppression time
Access time
Bus free time for next mode
Start hold time
Start setup time
Data in hold time
Data in setup time
Input rise time
Input fall time
Stop setup time
Data out hold time
Write cycle time
V
CC
= 2.7 V to 5.5 V
V
CC
= 1.8 V to 2.7 V
Symbol
f
SCL
t
LOW
t
HIGH
t
I
t
AA
t
BUF
t
HD.STA
t
SU.STA
t
HD.DAT
t
SU.DAT
t
R
t
F
t
SU.STO
t
DH
t
WC
t
WC
Min
1200
600
100
1200
600
600
0
100
600
50
Typ
Max
400
50
900
300
300
10
15
Unit
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
2
2
1
1
1
Notes
Notes: 1. This parameter is sampled and not 100% tested.
2. t
WC
is the time from a stop condition to the end of internally controlled write cycle.
5
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参数对比
与HN58X2464FPIAG相近的元器件有:HN58X2416FPIAG、HN58X2432FPIAG、HN58X2408FPIAG。描述及对比如下:
型号 HN58X2464FPIAG HN58X2416FPIAG HN58X2432FPIAG HN58X2408FPIAG
描述 EEPROM, 8KX8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8 EEPROM, 2KX8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8 EEPROM, 4KX8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8 EEPROM, 1KX8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas )
零件包装代码 SOIC SOIC SOIC SOIC
包装说明 SOP, SOP8,.25 SOP, SOP8,.25 SOP, SOP8,.25 SOP, SOP8,.25
针数 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown
数据保留时间-最小值 10 10 10 10
耐久性 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles
I2C控制字节 1010DDDR 1010MMMR 1010DDDR 1010DMMR
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
长度 4.9 mm 4.9 mm 4.9 mm 4.9 mm
内存密度 65536 bit 16384 bit 32768 bit 8192 bit
内存集成电路类型 EEPROM EEPROM EEPROM EEPROM
内存宽度 8 8 8 8
端子数量 8 8 8 8
字数 8192 words 2048 words 4096 words 1024 words
字数代码 8000 2000 4000 1000
最高工作温度 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
组织 8KX8 2KX8 4KX8 1KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP SOP
封装等效代码 SOP8,.25 SOP8,.25 SOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
并行/串行 SERIAL SERIAL SERIAL SERIAL
电源 2/5 V 2/5 V 2/5 V 2/5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm 1.75 mm 1.75 mm
串行总线类型 I2C I2C I2C I2C
最大待机电流 0.000003 A 0.000003 A 0.000003 A 0.000003 A
最大压摆率 0.003 mA 0.003 mA 0.003 mA 0.003 mA
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL
宽度 3.9 mm 3.9 mm 3.9 mm 3.9 mm
写保护 HARDWARE HARDWARE HARDWARE HARDWARE
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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