HS-2520RH
TM
Data Sheet
July 2001
File Number
3599.3
Radiation Hardened Uncompensated,
High Slew Rate Operational Amplifier
The HS-2520RH is a radiation hardened monolithic
operational amplifier which delivers an unsurpassed
combination of specifications for slew rate, bandwidth and
settling time. This dielectrically isolated amplifier is designed
for closed loop gains of 3 or greater without external
compensation. In addition, this high performance component
also provides low offset current and high input impedance.
The 100V/µs (Min) slew rate and fast settling time of this
amplifier makes it an ideal component for pulse amplification
and data acquisition designs. To insure compliance with slew
rate and transient response specifications, all devices are
100% tested for AC performance characteristics over full
temperature. This device is a valuable component for RF
and video circuitry requiring wideband operation. For
accurate signal conditioning designs, the HS-2520RH
superior dynamic specifications are complemented by 25nA
(Max) offset current and offset voltage trim capability.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95685. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to SMD # 5962-95685
• QML Qualified per MIL-PRF-38535 Requirements
• High Slew Rate . . . . . . . . . . .100V/µs Min, 120V/µs (Typ)
• Wide Power Bandwidth . . . . . . . . . . . . . . . . 1.5MHz (Min)
• Wide Gain Bandwidth . . . . . . . 10MHz Min, 20MHz (Typ)
• High Input Impedance . . . . . . . . 50MΩ Min, 100MΩ (Typ)
• Low Offset Current . . . . . . . . . . . . . 25nA Min, 10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . . 200ns (Typ)
• Low Quiescent Supply Current . . . . . . . . . . . . 6mA (Max)
• Gamma Dose . . . . . . . . . . . . . . . . . . . . . . 1 x 10
4
RAD(Si)
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplifiers
Ordering Information
ORDERING NUMBER
HS0-2520RH-Q
5962D9568501VGA
5962D9568501VPA
5962D9568501VPC
INTERNAL
MKT. NUMBER
HS0-2520RH-Q
HS2-2520RH-Q
HS7-2520RH-Q
HS7B-2520RH-Q
TEMP. RANGE
(
o
C)
25
-55 to 125
-55 to 125
-55 to 125
Pinouts
HS7-2520RH (CERDIP) GDIP1-T8
OR
HS7B-2520RH (SBDIP) CDIP2-T8
TOP VIEW
HS2-2520RH (CAN) MACY1-X8
TOP VIEW
COMP
BAL
-IN
+IN
V-
1
2
3
4
+
8
7
6
5
COMP
V+
OUT
BAL
IN+
3
4
V-
5
BAL
BAL
1
8
7
V+
IN-
2
-
+
6
OUT
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2001, All Rights Reserved
HS-2520RH
Timing Waveforms
VIN
+
50
VOUT
-
1.33K
667
50pF
FIGURE 1. SIMPLIFIED TEST CIRCUIT
+1.67V
INPUT
INPUT
+67mV
0V
-1.67V
+5V
75%
OUTPUT
25%
-5V
∆T
SLEW
RATE
=
∆V/∆T
∆V
0V
OVERSHOOT
+200mV
90%
OUTPUT
10%
0V
RISE TIME
-67mV
FIGURE 2. SLEW RATE WAVEFORM
FIGURE 3. TRANSIENT RESPONSE WAVEFORM
NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized.
Typical Performance Curves
120
100
80
60
40
20
0
-20
-50
-55
-25
0
25
50
T
A
= 25
o
C, VSUPPLY =
±15V,
Unless Otherwise Specified
VS =
±15
EQUIVALENT INPUT NOISE (µV)
100
10K SOURCE RESISTANCE
BIAS CURRENT
CURRENT (nA)
10
0 SOURCE RESISTANCE
1.0
OFFSET CURRENT
THERMAL NOISE OF 10K RESISTOR
0.1
100Hz
1kHz
10kHz
100kHz
1MHz
75
100
125
TEMPERATURE (
o
C)
UPPER 3dB FREQUENCY, LOWER 3dB FREQUENCY (10Hz)
FIGURE 4. INPUT BIAS AND OFFSET CURRENT vs
TEMPERATURE
FIGURE 5. EQUIVALENT INPUT NOISE vs BANDWIDTH
2
HS-2520RH
Typical Performance Curves
1.3
NORMALIZED PARAMETERS
REFFERED TO VALUES AT
±25
o
C
OPEN LOOP VOLTAGE GAIN (dB)
VS =
±15
1.2
1.1
BANDWIDTH
1.0
SLEW RATE
0.9
0.8
0.7
-50
-55
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
BANDWIDTH
SLEW RATE
T
A
= 25
o
C, VSUPPLY =
±15V,
Unless Otherwise Specified
(Continued)
120
100
80
60
40
20
0
-20
10
100
1K
10K
100K
1M
10M
100M
GAIN
PHASE
FREQUENCY (Hz)
FIGURE 6. NORMALIZED AC PARAMETERS vs TEMPERATURE
1.1
NORMALIZED PARAMETERS
REFERRED TO VALUES AT
±15V
FIGURE 7. OPEN-LOOP FREQUENCY AND PHASE RESPONSE
120
OPEN LOOP VOLTAGE GAIN (dB)
100
0pF
80
60
40
20
0
1000pF
-20
300pF
30pF
100pF
SLEW RATE
BANDWIDTH
1.0
SLEW RATE
BANDWIDTH
0.9
0.8
±10
±15
SUPPLY VOLTAGE
±20
10
100
1K
10K
100K
1M
10
10M
FREQUENCY (Hz)
FIGURE 8. NORMALIZED AC PARAMETERS vs SUPPLY
VOLTAGE AT 25
o
C
FIGURE 9. OPEN-LOOP FREQUENCY RESPONSE FOR
VARIOUS VALUES OF CAPACITORS FROM
BANDWIDTH CONTROL PIN TO GROUND
35
88
87
86
GAIN (dB)
85
84
83
82
-50
-55
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
VS =
±20
VS =
±15
VS =
±10
PEAK-TO-PEAK VOLTAGE SWING
VS =
±20
30
25
20
15
10
5
0
10K
100K
1MEG
10MEG
FREQUENCY (Hz)
VS =
±10
VS =
±15
FIGURE 10. OPEN-LOOP VOLTAGE GAIN vs TEMPERATURE
FIGURE 11. OUTPUT VOLTAGE SWING vs FREQUENCY
AT 25
o
C
3
HS-2520RH
Typical Performance Curves
4.8
4.6
4.4
4.2
4.0
3.8
3.6
-50
-55
-25
0
25
50
75
100
125
HORIZONTAL = 100ns/DIV
TEMPERATURE (
o
C)
TA = 25
o
C
VS = +15V
T
A
= 25
o
C, VSUPPLY =
±15V,
Unless Otherwise Specified
(Continued)
RL = 2kΩ
CL = 50pF
CURRENT (nA)
VS =
±20
VS =
±15
VS =
±10
UPPER TRACE: INPUT; 1.67V/DIV 10
LOWER TRACE: OUTPUT; 5V/DIV
FIGURE 12. POWER SUPPLY CURRENT vs TEMPERATURE
120
100
POWER SUPPLY
REJECTION RATIO (dB)
80
60
40
20
0
100kHz
FIGURE 13. VOLTAGE FOLLOWER PULSE RESPONSE
1000
INPUT NOISE VOLTAGE (nV√Hz)
10
INPUT NOISE CURRENT (pA√Hz)
INPUT NOISE CURRENT
100
10
NEGATIVE SUPPLY
POSITIVE SUPPLY
INPUT NOISE VOLTAGE
10
1
1
1kHz
10kHz
100kHz
1MHz
1
10
100
1K
10K
100K
FREQUENCY (Hz)
FREQUENCY (Hz)
0.1
FIGURE 14. POWER SUPPLY REJECTION RATIO vs
FREQUENCY
FIGURE 15. INPUT NOISE DENSITY vs FREQUENCY
Suggested VOS Adjustment
V+
20kΩ
RT
IN
BAL
OUT
V-
NOTE: Tested offset adjustment range is | VOS +1mV | minimum referred to output. Typical range is +20mV to -18mV with RT = 20kΩ.
4
HS-2520RH
Burn-In Circuits
HS7-2520 CERDIP
HS2-2520 METAL CAN
V+
C3
8
1
2
R1
3
V-
D2
4
C2
R1
C2
V-
D2
8
1
V+
C1
C3
3
4
D1
2
+
5
7
C1
D1
-
+
7
6
5
-
6
NOTES:
1. R1 = 1MΩ,
±5%,
1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. C3 = 0.01µF (±10%)/Socket
4. D1 = D2 = 1N4002 or equivalent (per board)
5. |(V+) - (V-)| = 31V
NOTES:
6. R1 = 1MΩ,
±5%,
1/4W (Min)
7. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
8. C3 = 0.01µF (±10%)/Socket
9. D1 = D2 = 1N4002 or equivalent (per board)
10. |(V+) - (V-)| = 31V
Irradiation Circuits
IRRADIATION CIRCUIT
C
1 BAL
1M
Ω
-5% (1/4W MIN)
V
-
C
2 -IN
3 +IN
V2
4
COMP 8
V+
7
OUT 6
BAL 5
C
V1
NOTES:
11. V1 = +15V
±10%
12. V2 = -15V
±10%
13. C = 0.1µF
±10%
5
