JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
HSB1109S
TRANSISTOR (PNP)
1.EMITTER
FEATURES
Complementary Pair with HSD1609S.
APPLICATIONS
Low Frequency and High Voltage Amplifier
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-160
-160
-5
-0.1
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1) *
h
FE(2)
V
CE(sat)
V
BE
f
T
*
*
Test
conditions
Min
-160
-160
-5
Typ
Max
Unit
V
V
V
I
C
= -0.01mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-140V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-1mA
I
C
=-30mA,I
B
=-3mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-5V,I
C
=-10mA, f=100MHz
-10
-10
60
30
-2
-1.5
5.5
140
320
μA
μA
V
V
pF
MHz
C
ob
CLASSIFICATION OF h
FE(1)
RANK
RANGE
B
60-120
C
100-200
D
160-320
A,Dec,2010
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