首页 > 器件类别 > 半导体 > 分立半导体

HU20130_11

200 A, 300 V, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

下载文档
文档预览
HU20130 - HU20150
G
J
B
D
Std. Polarity
Base is cathode
Rev. Polarity
Base is anode
Dim. Inches
Millimeter
Minimum Maximum Minimum Maximum Notes
A
B
C
D
E
F
G
H
J
K
L
Notes:
Baseplate: Nickel plated
copper
1.52
.725
.605
1.182
.745
.152
.525
.156
.495
.120
38.61
1.56
18.42
.775
15.37
.625
30.02
1.192
18.92
.755
3.86
.160
1/4-20 UNC-2B
13.34
.580
3.96
.160
12.57
.505
3.05
.130
39.62
19.69
15.88
30.28
19.18
4.06
14.73
4.06
12.83
3.30
Ultrafast Recovery Modules
K
H
E
F
C
Sq.
Dia.
Dia.
A
L
Microsemi
Catalog Number
HU20130*
HU20140*
HU20150*
Working Peak
Reverse Voltage
300V
400V
500V
Repetitive Peak
Reverse Voltage
300V
400V
500V
Ultra Fast Recovery
175°C Junction Temperature
200 Amp current rating
ROHS Compliant
*Add Suffix R for Reverse Polarity
Electrical Characteristics
Average forward current
Maximum surge current
Max peak forward voltage
Max peak reverse recovery time
Max peak reverse current
Max peak reverse current
Typical junction capacitance
I F(AV) 200 Amps
I FSM 2500 Amps
VFM
1.25 Volts
trr
110 nS
I RM
8 mA
I RM
50 uA
CJ
500 pF
TC = 126°C, Square wave, R0JC = 0.24°C/W
8.3ms, half sine,T J = 175°C
I FM = 200A: J = 25°C*
T
I F = 1A, R = 30V di/dt = 25A/µS
V
VRRM, TJ = 125°C*
VRRM, TJ = 25°C
VR = 10V,T J = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Weight
T STG
TJ
R OJC
R OCS
-55°C to 175°C
-55°C to 175°C
0.24°C/W Junction to case
0.12°C/W Case to sink
35-40 inch pounds
20-25 inch pounds
1.1 ounces (32 grams) typical
www.microsemi.com
January, 2011 - Rev. 3
HU20130 - HU20150
Figure 1
Typical Forward Characteristics
1000
800
600
400
Junction Capacitance - pF
Figure 3
Typical Junction Capacitance
10000
1000
200
100
80
60
40
Instantaneous Forward Current - Amperes
100
0.1
1.0
10
100
Reverse Voltage - Volts
Figure 4
Maximum Allowable Case Temperature - C
20
175 C
25 C
Forward Current Derating
180
170
160
150
140
130
120
110
90
0
60
120
120
180
180
DC
240
300
10
8.0
6.0
4.0
2.0
1.0
0
.4
.8
1.2
1.6
2.0
2.4
2.8
Instantaneous Forward Voltage - Volts
Average Forward Current - Amperes
Figure 2
Typical Reverse Characteristics
10
Typical Reverse Current - mA
1.0
0.1
.01
.001
25 C
100
200
300
400
500
175 C
Maximum Power Dissipation - Watts
Figure 5
Maximum Forward Power Dissipation
350
300
250
200
150
100
50
0
0
60
120
180
240
300
Average Forward Current - Amperes
90 120
180
DC
125 C
75 C
.0001
0
Reverse Voltage - Volts
www.microsemi.com
January, 2011 - Rev. 3
查看更多>
参数对比
与HU20130_11相近的元器件有:HU20130、HU20140、HU20150。描述及对比如下:
型号 HU20130_11 HU20130 HU20140 HU20150
描述 200 A, 300 V, SILICON, RECTIFIER DIODE 200 A, 300 V, SILICON, RECTIFIER DIODE 200 A, 400 V, SILICON, RECTIFIER DIODE 200 A, 500 V, SILICON, RECTIFIER DIODE
是否Rohs认证 - 不符合 不符合 不符合
厂商名称 - Microsemi Microsemi Microsemi
Reach Compliance Code - unknow unknow unknow
ECCN代码 - EAR99 EAR99 EAR99
应用 - ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
外壳连接 - CATHODE CATHODE CATHODE
配置 - SINGLE SINGLE SINGLE
二极管元件材料 - SILICON SILICON SILICON
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 - R-XUFM-X1 R-XUFM-X1 R-XUFM-X1
最大非重复峰值正向电流 - 2500 A 2500 A 2500 A
元件数量 - 1 1 1
相数 - 1 1 1
端子数量 - 1 1 1
最高工作温度 - 175 °C 175 °C 175 °C
最低工作温度 - -55 °C -55 °C -55 °C
最大输出电流 - 200 A 200 A 200 A
封装主体材料 - UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 - Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 - 300 V 400 V 500 V
最大反向恢复时间 - 0.11 µs 0.11 µs 0.11 µs
表面贴装 - NO NO NO
端子形式 - UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 - UPPER UPPER UPPER
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
英飞凌LLC设计指导文件, 含配套的EXCEL计算表文件
英飞凌LLC设计指导文件, 含配套的EXCEL计算表文件 英飞凌LLC设计指导文件...
qwqwqw2088 电源技术
LPC1114PWM多路输出
自己是一个新手,对照例程学寄存器,遇到如下几个问题: (1)、在带的例程中加定时器,都是按原有程序配...
liuzhihaoainana NXP MCU
高频直流脉冲环节静止变流器研究
 静止变流器是应用功率半导体器件,将主电源直流电变换成恒压恒频交流电的电气装置。对于交流用电负载与主...
zbz0529 电源技术
数显压力控制器
本帖最后由 joneywei 于 2015-11-12 10:59 编辑 演示部分 ...
joneywei 瑞萨电子MCU
EVC实现button透明模拟器可以但是ARM设备不行?
下载了一个例子 http://sunwill.blog.ccidnet.com/blog-htm-i...
caosc ARM技术
从技术角度分析,汽车生物识别技术的未来
随着科技的进步,汽车行业正在经历一场显著的转变,生物识别技术在这一转变中扮演了关键角色。从增强车...
eric_wang 汽车电子
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消