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HVR112

HIGH VOLTAGE

器件类别:分立半导体    二极管   

厂商名称:EIC [EIC discrete Semiconductors]

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
EIC [EIC discrete Semiconductors]
Reach Compliance Code
compli
Is Samacsys
N
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.5 V
最大非重复峰值正向电流
30 A
元件数量
1
最大输出电流
1 A
最大重复峰值反向电压
1200 V
表面贴装
NO
Base Number Matches
1
文档预览
HVR112 - HVR120
PRV : 1200 - 2000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
HIGH VOLTAGE
RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Ta = 75°C
SYMBOL HVR112 HVR114 HVR116 HVR118 HVR120
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Cj
R
θ
JA
T
J
T
STG
1200
840
1200
1400
980
1400
1600
1120
1600
1.0
30
2.2
5.0
100
36
26
- 40 to + 150
- 40 to + 150
1800
1260
1800
2000
1400
2000
UNIT
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
°C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25°C
Ta = 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( HVR112 - HVR120 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
30
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
0.8
24
0.6
18
0.4
12
0.2
6
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40
60
100
AMBIENT TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
FORWARD CURRENT, AMPERES
T
J
= 100
°C
REVERSE CURRENT,
MICROAMPERES
1
1.0
0.1
Pulse Width = 300
µs
1% Duty Cycle
T
J
= 25
°C
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
0.1
T
J
= 25
°C
0.01
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 24, 2005
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参数对比
与HVR112相近的元器件有:HVR120、HVR114、HVR112_05、HVR116、HVR118。描述及对比如下:
型号 HVR112 HVR120 HVR114 HVR112_05 HVR116 HVR118
描述 HIGH VOLTAGE HIGH VOLTAGE HIGH VOLTAGE HIGH VOLTAGE HIGH VOLTAGE HIGH VOLTAGE
是否无铅 不含铅 不含铅 不含铅 - 不含铅 不含铅
是否Rohs认证 符合 符合 符合 - 符合 符合
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli - compli compli
Is Samacsys N N N - N N
配置 SINGLE SINGLE SINGLE - SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.5 V 1.5 V 1.5 V - 1.5 V 1.5 V
最大非重复峰值正向电流 30 A 30 A 30 A - 30 A 30 A
元件数量 1 1 1 - 1 1
最大输出电流 1 A 1 A 1 A - 1 A 1 A
最大重复峰值反向电压 1200 V 2000 V 1400 V - 1600 V 1800 V
表面贴装 NO NO NO - NO NO
Base Number Matches 1 1 1 - 1 1
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