型号
- 型号
- 关键词
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, LEAD FREE, FBGA-84
厂商名称：SK Hynix(海力士)
厂商官网：http://www.hynix.com/eng/
器件标准：
| 型号 | HY5PS561621BFP-22 | HY5PS561621BFP-25 | HY5PS561621BFP-2 | HY5PS561621BFP-2L | HY5PS561621BFP-28 | HY5PS561621BFP-16 |
|---|---|---|---|---|---|---|
| 描述 | DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, LEAD FREE, FBGA-84 | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84 | DDR DRAM, 16MX16, 0.3ns, CMOS, PBGA84, LEAD FREE, FBGA-84 | DDR DRAM, 16MX16, 0.3ns, CMOS, PBGA84, LEAD FREE, FBGA-84 | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84 | DDR DRAM, 16MX16, 0.25ns, CMOS, PBGA84, LEAD FREE, FBGA-84 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 |
| 针数 | 84 | 84 | 84 | 84 | 84 | 84 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 0.35 ns | 0.45 ns | 0.3 ns | 0.3 ns | 0.45 ns | 0.25 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 454 MHz | 400 MHz | 500 MHz | 500 MHz | 357 MHz | 625 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| 交错的突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
| JESD-30 代码 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 |
| JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 |
| 长度 | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm |
| 内存密度 | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 84 | 84 | 84 | 84 | 84 | 84 |
| 字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
| 字数代码 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 组织 | 16MX16 | 16MX16 | 16MX16 | 16MX16 | 16MX16 | 16MX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
| 封装等效代码 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 电源 | 1.8 V | 1.8 V | 2 V | 1.8 V | 1.8 V | 2 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES |
| 连续突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
| 最大待机电流 | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A | 0.008 A |
| 最大压摆率 | 0.24 mA | 0.22 mA | 0.26 mA | 0.26 mA | 0.21 mA | 0.3 mA |
| 最大供电电压 (Vsup) | 2.1 V | 2.1 V | 2.1 V | 2.1 V | 2.1 V | 2.1 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.9 V | 1.7 V | 1.7 V | 1.9 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 2 V | 1.8 V | 1.8 V | 2 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
| 峰值回流温度（摄氏度） | 260 | 260 | - | 260 | 260 | - |
| 处于峰值回流温度下的最长时间 | 20 | 20 | - | 20 | 20 | - |