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HY5RS573225FP-15

DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144

器件类别：存储    存储   

厂商名称：SK Hynix(海力士)

厂商官网：http://www.hynix.com/eng/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SK Hynix(海力士)
零件包装代码
BGA
包装说明
LFBGA, BGA144,12X12,32
针数
144
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
最长访问时间
0.26 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
650 MHz
I/O 类型
COMMON
JESD-30 代码
S-PBGA-B144
长度
12 mm
内存密度
268435456 bit
内存集成电路类型
DDR DRAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
144
字数
8388608 words
字数代码
8000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
组织
8MX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LFBGA
封装等效代码
BGA144,12X12,32
封装形状
SQUARE
封装形式
GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）
260
电源
2 V
认证状态
Not Qualified
刷新周期
4096
座面最大高度
1.3 mm
自我刷新
YES
连续突发长度
4
最大待机电流
0.03 A
最大压摆率
1.15 mA
最大供电电压 (Vsup)
2.1 V
最小供电电压 (Vsup)
1.9 V
标称供电电压 (Vsup)
2 V
表面贴装
YES
技术
CMOS
温度等级
OTHER
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
20
宽度
12 mm
文档预览
HY5RS573225F(P)
256M (8Mx32) GDDR3 SDRAM
HY5RS573225F(P)
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.1 / Sep. 2005
1
1HY5RS573225F(P)
Revision History
Revision No.
0.1
0.2
1.0
1.1
Supports Lead free parts
AC, DC Parameter Change
Driver Strength, IDD6, tDQSH/L, tCH/L change & tRCDW insert
Changed IDD Value (2P/ 3P)
History
Draft Date
Nov. 2004
Feb. 2005
Mar. 2005
Sep. 2005
Remark
Rev. 1.1 / Sep. 2005
2
1HY5RS573225F(P)
DESCRIPTION
The Hynix HY5RS573225 is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits.
The Hynix HY5RS573225 is internally configured as a quad-bank DRAM.
The Hynix HY5RS573225 uses a double data rate architecture to achieve high-speed opreration. The double date rate
architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock
cycle at the I/O pins. A single read or write access for the Hynix HY5RS573225 consists of a 4n-bit wide, every two-
clock-cycles data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data trans-
fers at the I/O pins. Read and write accesses to the Hynix HY5RS573225 is burst oriented; accesses start at a selected
locations and continue for a programmed number of locations in a programmed sequence. Accesses begin with the
registration of an ACTIVE command, which is then followed by a READ of WRITE command. The address bits regis-
tered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the
bank; A0-A11 select the row). The address bits registered coincident with the READ or WRITE command are used to
select the starting column location for the burst access. Prior to normal operation, the Hynix HY5RS573225 must be
initialized.
FEATURES
•
•
•
•
•
•
•
•
•
V
DD
=2.0V
±
0.1V, V
DDQ
=2.0V
±
0.1V
Single ended READ Strobe (RDQS) per byte
Single ended WRITE Strobe (WDQS) per byte
Internal, pipelined double-data-rate (DDR) architec-
ture; two data accesses per clock cycle
Calibrated output drive
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
RDQS edge-aligned with data for READs; with WDQS
center-aligned with data for WRITEs
Four internal banks for concurrent operation
•
•
•
•
•
•
•
•
•
•
Data mask (DM) for masking WRITE data
4n prefetch
Programmable burst lengths: 4
32ms, 4K-cycle auto refresh
Auto precharge option
Auto Refresh and Self Refresh Modes
1.8v Pseudo Open Drain I/O
Concurrent Auto Precharge support
tRAS lockout support, Active Termination support
Programmable Write latency(1,2 or 3)
ORDERING INFORMATION
Part No.
HY5RS573225F(P)-12
HY5RS573225F(P)-13
HY5RS573225F(P)-14
HY5RS573225F(P)-15
HY5RS573225F(P)-16
HY5RS573225F(P)-18
HY5RS573225F(P)-2
HY5RS573225F(P)-22
VDD=2.0V,
VDDQ=2.0V
Power Supply
Clock
Frequency
800MHz
750MHz
700MHz
650MHz
600MHz
550MHz
500MHz
450MHz
Max Data
Rate
1600Mbps/pin
1500Mbps/pin
1400Mbps/pin
1300Mbps/pin
1200Mbps/pin
1100Mbps/pin
1000Mbps/pin
900Mbps/pin
POD_18
12mmx12mm
144Ball FBGA
Interface
Package
Note) Hynix supports Lead free parts for each speed grade with same specification, except Lead free materials.
We'll add "P" character after "F" for Lead free product.
For example, the part number of 500MHz Lead free product is HY5RS573225FP-2.
Rev. 1.1 / Sep. 2005
3
1HY5RS573225F(P)
BALLOUT CONFIGURATION
2
3
4
5
6
7
8
9
10
11
12
13
B
WDQS0
RDQS0
VSSQ
DQ3
DQ2
DQ0
DQ31
DQ29
DQ28
VSSQ
RDQS3
WDQS3
C
DQ4
DM0
VDDQ
VDDQ
DQ1
VDDQ
VDDQ
DQ30
VDDQ
VDDQ
DM3
DQ27
D
DQ6
DQ5
VSSQ
VSSQ
VSSQ
VDD
VDD
VSSQ
VSSQ
VSSQ
DQ26
DQ25
E
DQ7
RFU3
VDD
VSS
VSSQ
VSS
VSS
VSSQ
VSS
VDD
RFU4
DQ24
F
DQ17
DQ16
VDDQ
VSSQ
VSS
therm
VSS
therm
VSS
therm
VSS
therm
VSSQ
VDDQ
DQ15
DQ14
G
DQ19
DQ18
VDDQ
VSSQ
VSS
therm
VSS
therm
VSS
therm
VSS
therm
VSSQ
VDDQ
DQ13
DQ12
H
WDQS2
RDQS2
VDDQ
VSSQ
VSS
therm
VSS
therm
VSS
therm
VSS
therm
VSSQ
VDDQ
RDQS1
WDQS1
J
DQ20
DM2
VDDQ
VSSQ
VSS
therm
VSS
therm
VSS
therm
VSS
therm
VSSQ
VDDQ
DM1
DQ11
K
DQ21
DQ22
VDDQ
VSSQ
VSS
VSS
VSS
VSS
VSSQ
VDDQ
DQ9
DQ10
L
DQ23
A3
VDD
VSS
RFU2
VDD
VDD
RFU1
VSS
VDD
A4
DQ8
M
VREF
A2
A10
RAS
RESET
CKE
RFU5
ZQ
CS
A9
A5
VREF
N
A0
A1
A11
BA0
CAS
CK
CK
WE
BA1
A8/AP
A6
A7
8M x 32
Configuration
Refresh Count
Bank Address
Row Address
Column Address
AP Flag
2M x 32 x 4 banks
4k
BA0, BA1
A0~A11
A0~A7, A9
A8
Package Top View
(see the balls through the package)
Rev. 1.1 / Sep. 2005
4
1HY5RS573225F(P)
FUNCTIONAL BLOCK DIAGRAM
4Banks x 2Mbit x 32 I/O Double Data Rate Synchronous DRAM
Rev. 1.1 / Sep. 2005
5
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参数对比
与HY5RS573225FP-15相近的元器件有：HY5RS573225FP-22、HY5RS573225FP-14、HY5RS573225FP-2、HY5RS573225FP-13、HY5RS573225FP-18、HY5RS573225FP-12、HY5RS573225FP-16。描述及对比如下：
型号 HY5RS573225FP-15 HY5RS573225FP-22 HY5RS573225FP-14 HY5RS573225FP-2 HY5RS573225FP-13 HY5RS573225FP-18 HY5RS573225FP-12 HY5RS573225FP-16
描述 DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA
包装说明 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32 LFBGA, BGA144,12X12,32
针数 144 144 144 144 144 144 144 144
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 0.26 ns 0.3 ns 0.26 ns 0.3 ns 0.25 ns 0.28 ns 0.25 ns 0.28 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 650 MHz 450 MHz 700 MHz 500 MHz 750 MHz 550 MHz 800 MHz 600 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144
长度 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm
内存密度 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
内存集成电路类型 DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 32 32 32 32 32 32 32 32
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 144 144 144 144 144 144 144 144
字数 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
字数代码 8000000 8000000 8000000 8000000 8000000 8000000 8000000 8000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
组织 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA
封装等效代码 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32 BGA144,12X12,32
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度） 260 260 260 260 260 260 260 260
电源 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 4096 4096 4096 4096 4096 4096 4096
座面最大高度 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm 1.3 mm
自我刷新 YES YES YES YES YES YES YES YES
连续突发长度 4 4 4 4 4 4 4 4
最大待机电流 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A
最大压摆率 1.15 mA 0.95 mA 1.2 mA 1 mA 1.25 mA 1.05 mA 1.3 mA 1.1 mA
最大供电电压 (Vsup) 2.1 V 2.1 V 2.1 V 2.1 V 2.1 V 2.1 V 2.1 V 2.1 V
最小供电电压 (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
标称供电电压 (Vsup) 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 20 20 20 20 20 20 20 20
宽度 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm
厂商名称 SK Hynix(海力士) SK Hynix(海力士) - - SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士)
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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