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IC62C256-45UI

Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, SOP-28

器件类别：存储    存储   

厂商名称：Integrated Silicon Solution ( ISSI )

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
包装说明
0.330 INCH, SOP-28
Reach Compliance Code
compliant
最长访问时间
45 ns
I/O 类型
COMMON
JESD-30 代码
R-PDSO-G28
JESD-609代码
e0
内存密度
262144 bit
内存集成电路类型
STANDARD SRAM
内存宽度
8
功能数量
1
端子数量
28
字数
32768 words
字数代码
32000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
32KX8
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP28,.5
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
电源
5 V
认证状态
Not Qualified
最大待机电流
0.0005 A
最小待机电流
2 V
最大压摆率
0.08 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
文档预览
1+$ + #$
.EATURES
32K x 8 LOW POWER CMOS STATIC RAM
• Access time: 45, 70 ns
• Low active power: 200 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby
— 28 mW (typical) TTL standby
• .ully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
DESCRIPTION
The
1+51
IC62C256 is a low power, 32,768 word by 8-bit
CMOS static RAM. It is fabricated using
1+51
's high-
performance, low power CMOS technology.
When
CS
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Select (CS) input and an active LOW Output Enable (OE)
input. The active LOW Write Enable (WE) controls both writing
and reading of the memory.
The IC62C256 is pin compatible with other 32K x 8 SRAMs in
330mil SOP or 8*13.4mm TSOP-1 package.
.UNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CS
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
ALSR010-0A 05/23/2001
1
1+$ + #$
PIN CON.IGURATION
28-Pin SOP
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CON.IGURATION
8x13.4mm TSOP-1
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PIN DESCRIPTIONS
A0-A14
CS
OE
WE
I/O0-I/O7
Vcc
GND
Address Inputs
Chip Select Input
Output Enable Input
Write Enable Input
Input/Output
Power
Ground
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
H
H
L
CS
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
D
OUT
D
IN
Vcc Current
I
SB

, I
SB
I
CC

, I
CC
I
CC

, I
CC
I
CC

, I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
Unit
V
°C
°C
W
mA
0.5
20
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2
Integrated Circuit Solution Inc.
ALSR010-0A 05/23/2001
1+$ + #$
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
5V ± 10%
5V ± 10%
DC ELECTRICAL CHARACTERISTICS
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage

Input LOW Voltage
 
Input Leakage
Output Leakage
Test Conditions
V
CC
= Min., I
OH
= –1.0 mA
V
CC
= Min., I
OL
= 2.1 mA
Min.
2.4
—
2.2
–0.3
Com.
Ind.
Com.
Ind.
–2
–10
–2
–10
Max.
—
0.4
V
CC
+ 0.5
0.8
2
10
2
10
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
,
Outputs Disabled
Note:
1. V
IH
=V
CC
+3.0V for pulse width less than 10ns.
2. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC

I
CC
I
SB

Parameter
Vcc Operating
Supply Current
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= Max.,
CS
= V
IL
I
OUT
= 0 mA, f = 0
V
CC
= Max.,
CS
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CS
≥
V
IH
, f = 0
V
CC
= Max.,
CS
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
-45 ns
Min. Max.
— 60
— 70
— 70
— 80
—
5
— 10
—
—
0.5
1.0
-70 ns
Min. Max.
—
60
—
70
—
65
—
75
—
5
—
10
—
—
0.5
1.0
Unit
mA
mA
mA
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
I
SB
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
p.
p.
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
Integrated Circuit Solution Inc.
ALSR010-0A 05/23/2001
3
1+$ + #$
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CS
Access Time
OE
Access Time
-45 ns
Min. Max.
45
—
2
—
—
0
0
3
0
0
—
—
45
—
45
25
—
20
—
20
—
30
-70 ns
Min.
Max.
70
—
2
—
—
0
0
3
0
0
—
—
70
—
70
35
—
25
—
25
—
50
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
OHA
t
ACS
t
DOE
t
LZOE
 
OE
to Low-Z Output
t
HZOE
 
OE
to High-Z Output
t
LZCS
 
CS
to Low-Z Output
t
HZCS
 
CS
to High-Z Output
t
PU
!
t
PD
!
CS
to Power-Up
CS
to Power-Down
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in .igure 1.
2. Tested with the load in .igure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and .all Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See .igures 1 and 2
AC TEST LOADS
480
Ω
5V
5V
480
Ω
OUTPUT
100 pF
Including
jig and
scope
255
Ω
OUTPUT
5 pF
Including
jig and
scope
255
Ω
.igure 1.
.igure 2.
4
Integrated Circuit Solution Inc.
ALSR010-0A 05/23/2001
1+$ + #$
AC WAVE.ORMS
READ CYCLE NO. 1
(1,2)
t
RC
ADDRESS
t
AA
t
OHA
D
OUT
PREVIOUS DATA VALID
t
OHA
DATA VALID
READ CYCLE NO. 2
(1,3)
t
RC
ADDRESS
t
AA
OE
t
OHA
t
DOE
CS
t
HZOE
t
LZOE
t
ACS
t
LZCS
t
HZCS
DATA VALID
D
OUT
HIGH-Z
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CS
= V
IL
.
3. Address is valid prior to or coincident with
CS
LOW transitions.
Integrated Circuit Solution Inc.
ALSR010-0A 05/23/2001
5
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参数对比
与IC62C256-45UI相近的元器件有：IC62C256-45T、IC62C256-45TI、IC62C256-45U、IC62C256-70T、IC62C256-70TI、IC62C256-70U、IC62C256-70UI。描述及对比如下：
型号 IC62C256-45UI IC62C256-45T IC62C256-45TI IC62C256-45U IC62C256-70T IC62C256-70TI IC62C256-70U IC62C256-70UI
描述 Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, SOP-28 Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Standard SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, SOP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, SOP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, SOP-28
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
包装说明 0.330 INCH, SOP-28 8 X 13.40 MM, TSOP1-28 8 X 13.40 MM, TSOP1-28 0.330 INCH, SOP-28 8 X 13.40 MM, TSOP1-28 8 X 13.40 MM, TSOP1-28 0.330 INCH, SOP-28 0.330 INCH, SOP-28
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
最长访问时间 45 ns 45 ns 45 ns 45 ns 70 ns 70 ns 70 ns 70 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
内存密度 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1
端子数量 28 28 28 28 28 28 28 28
字数 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
字数代码 32000 32000 32000 32000 32000 32000 32000 32000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 70 °C 85 °C 70 °C 85 °C
组织 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP TSOP1 TSOP1 SOP TSOP1 TSOP1 SOP SOP
封装等效代码 SOP28,.5 TSSOP28,.53,22 TSSOP28,.53,22 SOP28,.5 TSSOP28,.53,22 TSSOP28,.53,22 SOP28,.5 SOP28,.5
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.0005 A 0.00025 A 0.0005 A 0.00025 A 0.00025 A 0.0005 A 0.00025 A 0.0005 A
最小待机电流 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
最大压摆率 0.08 mA 0.07 mA 0.08 mA 0.07 mA 0.065 mA 0.075 mA 0.065 mA 0.075 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 1.27 mm 0.55 mm 0.55 mm 1.27 mm 0.55 mm 0.55 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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