IDB04E120
Fast Switching EmCon Diode
Feature
•
1200 V EmCon technology
•
Fast recovery
•
Soft switching
•
Low reverse recovery charge
•
Low forward voltage
•
Easy paralleling
Product Summary
V
RRM
I
F
V
F
T
jmax
1200
4
1.65
150
V
A
V
°C
PG-TO263-3-2
Type
IDB04E120
Package
PG-TO263-3-2
Ordering Code
-
Marking
D04E120
Pin 1
NC
PIN 2
C
PIN 3
A
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continous forward current
T
C
=25°C
T
C
=90°C
Symbol
V
RRM
I
F
Value
1200
11.2
7.1
Unit
V
A
Surge non repetitive forward current
T
C
=25°C,
t
p
=10 ms, sine halfwave
I
FSM
I
FRM
P
tot
28
16.5
W
43.1
20.6
Maximum repetitive forward current
T
C
=25°C,
t
p
limited by
T
jmax
,
D=0.5
Power dissipation
T
C
=25°C
T
C
=90°C
Operating and storage temperature
Soldering temperature
reflow soldering, MSL1
T
j ,
T
stg
T
S
-55...+150
245
°C
°C
Rev.2.2
Page 1
2007-09-01
IDB04E120
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
35
max.
2.9
62
62
-
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Reverse leakage current
V
R
=1200V,
T
j
=25°C
V
R
=1200V,
T
j
=150°C
Symbol
min.
I
R
-
-
V
F
-
-
Values
typ.
max.
Unit
µA
-
-
1.65
1.7
100
350
V
2.15
-
Forward voltage drop
I
F
=4A,
T
j
=25°C
I
F
=4A,
T
j
=150°C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.2
Page 2
2007-09-01
IDB04E120
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Reverse recovery time
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=25°C
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=125°C
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=150°C
Symbol
min.
t
rr
-
-
-
I
rrm
-
-
-
Q
rr
-
-
-
S
-
-
-
Values
typ.
max.
Unit
ns
115
180
185
-
-
-
A
7.15
8
8.1
-
-
-
nC
330
575
630
-
-
-
Peak reverse current
V
R
=800V,
I
F
= 4 A, di
F
/dt=750A/µs,
T
j
=25°C
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=125°C
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=150°C
Reverse recovery charge
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=25°C
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=125°C
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=150°C
Reverse recovery softness factor
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=25°C
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=125°C
V
R
=800V,
I
F
=4A, di
F
/dt=750A/µs,
T
j
=150°C
6
7.8
7.8
-
-
-
Rev.2.2
Page 3
2007-09-01
IDB04E120
1 Power dissipation
P
tot
=
f
(T
C
)
parameter: Tj
≤
150°C
45
2 Diode forward current
I
F
= f(T
C
)
parameter:
T
j
≤
150°C
12
W
A
10
35
9
8
P
tot
30
I
F
25
20
15
10
5
0
25
7
6
5
4
3
2
1
50
75
100
150
0
25
°C
T
C
50
75
100
°C
T
C
150
3 Typ. diode forward current
I
F
=
f
(V
F
)
12
4 Typ. diode forward voltage
V
F
=
f
(T
j
)
2.4
8A
A
10
9
8
-55°C
25°C
100°C
150°C
V
2
7
6
5
4
V
F
1.8
I
F
4A
1.6
2A
1.4
3
2
1
0
0
0.5
1
1.5
2
1.2
V
V
F
3
1
-60
-20
20
60
100
160
°C
T
j
Rev.2.2
Page 4
2007-09-01
IDB04E120
5 Typ. reverse recovery time
t
rr
=
f
(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
500
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125 °C
900
ns
400
350
nC
800
8A
300
250
200
150
100
50
0
200
Q
rr
t
rr
8A
4A
2A
750
700
650
600
550
500
450
400
200
4A
2A
300
400
500
600
700
800
A/µs
1000
di
F
/dt
300
400
500
600
700
800
A/µs
1000
di
F
/dt
7 Typ. reverse recovery current
I
rr
=
f
(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
12
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
20
A
8A
4A
2A
16
14
10
8A
4A
2A
I
rr
S
300
400
500
600
700
800
9
12
10
8
6
8
7
6
4
5
2
0
200
4
200
A/µs
1000
di
F
/dt
300
400
500
600
700
800
A/µs
1000
di
F
/dt
Rev.2.2
Page 5
2007-09-01
