型号
- 型号
- 关键词
| 型号 | IDT6167LART | IDT6167SAE | IDT6167SAF | IDT6167SART | IDT6167LAE | IDT6167LAF |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 16KX1, CMOS | Standard SRAM, 16KX1, CMOS | Standard SRAM, 16KX1, CMOS | Standard SRAM, 16KX1, CMOS | Standard SRAM, 16KX1, CMOS | Standard SRAM, 16KX1, CMOS |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装等效代码 | DIE OR CHIP | FL(UNSPEC) | FL(UNSPEC) | DIE OR CHIP | FL(UNSPEC) | FL(UNSPEC) |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 225 | 225 | 225 | 225 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
| 封装主体材料 | - | CERAMIC | CERAMIC | - | CERAMIC | CERAMIC |
| 封装代码 | - | DFP | DFP | - | DFP | DFP |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | FLATPACK | FLATPACK | - | FLATPACK | FLATPACK |
| 表面贴装 | - | YES | YES | - | YES | YES |
| 端子形式 | - | FLAT | FLAT | - | FLAT | FLAT |
| 端子位置 | - | DUAL | DUAL | - | DUAL | DUAL |
