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IDT70V08L15PF

Dual-Port SRAM, 64KX8, 15ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
QFP
包装说明
14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
针数
100
Reach Compliance Code
not_compliant
ECCN代码
3A991.B.2.B
最长访问时间
15 ns
I/O 类型
COMMON
JESD-30 代码
S-PQFP-G100
JESD-609代码
e0
长度
14 mm
内存密度
524288 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
8
湿度敏感等级
3
功能数量
1
端口数量
2
端子数量
100
字数
65536 words
字数代码
64000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
64KX8
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LFQFP
封装等效代码
QFP100,.63SQ,20
封装形状
SQUARE
封装形式
FLATPACK, LOW PROFILE, FINE PITCH
并行/串行
PARALLEL
峰值回流温度(摄氏度)
240
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.6 mm
最大待机电流
0.003 A
最小待机电流
3 V
最大压摆率
0.225 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
GULL WING
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
20
宽度
14 mm
Base Number Matches
1
文档预览
HIGH-SPEED
64K x 8 DUAL-PORT
STATIC RAM
Features
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 15/20/25/35ns (max.)
Low-power operation
– IDT70V08S
Active: 550mW (typ.)
Standby: 5mW (typ.)
– IDT70V08L
Active: 550mW (typ.)
Standby: 1mW (typ.)
Dual chip enables allow for depth expansion without
external logic
IDT70V08 easily expands data bus width to 16 bits or
x
IDT70V08S/L
x
x
x
x
x
x
x
x
x
x
x
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
LVTTL-compatible, single 3.3V (±0.3V) power supply
Available in a 100-pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
x
Functional Block Diagram
R/W
L
CE
0L
CE
1L
OE
L
R/W
R
CE
0R
CE
1R
OE
R
I/O
0-7L
I/O
Control
(1,2)
I/O
Control
I/O
0-7R
(1,2)
BUSY
L
BUSY
R
64Kx8
MEMORY
ARRAY
70V08
A
15R
A
0R
A
15L
A
0L
Address
Decoder
Address
Decoder
A
15L
A
0L
CE
0L
CE
1L
OE
L
R/W
L
SEM
L
(2)
INT
L
M/S
NOTES:
1.
BUSY
is an input as a Slave (M/S-V
IL
) and an output when it is a Master (M/S-V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
A
15R
A
0R
CE
0R
CE
1R
OE
R
R/W
R
SEM
R
(2)
INT
R
3740 drw 01
(1)
JANUARY 2001
DSC-3740/4
1
©2000 Integrated Device Technology, Inc.
IDT70V08S/L
High-Speed 64K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT70V08 is a high-speed 64K x 8 Dual-Port Static RAM. The
IDT70V08 is designed to be used as a stand-alone 512K-bit Dual-Port
RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-
or-more word system. Using the IDT MASTER/SLAVE Dual-Port
RAM approach in 16-bit or wider memory system applications results
in full-speed, error-free operation without the need for additional
discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access
for reads or writes to any location in memory. An automatic power
down feature controlled by the chip enables (either
CE
0
or CE
1
)
permit the on-chip circuitry of each port to enter a very low standby
power mode.
Fabricated using IDT’s CMOS high-performance technology,
these devices typically operate on only 550mW of power.
The IDT70V08 is packaged in a 100-pin Thin Quad Flatpack
(TQFP).
Pin Configurations
(1,2,3)
Index
NC
NC
A
7L
A
8L
A
9L
A
10L
A
11L
A
12L
A
13L
A
14L
A
15L
NC
Vcc
NC
NC
NC
NC
CE
0L
CE
1L
SEM
L
R/W
L
OE
L
GND
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
1
75
2
74
3
73
4
72
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
54
54
53
NC
NC
A
6L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
NC
INT
L
BUSY
L
GND
M/S
BUSY
R
INT
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
NC
NC
IDT70V08PF
PN100-1
(4)
100-Pin TQFP
Top View
(5)
52
24
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
NC
A
7R
A
8R
A
9R
A
10R
A
11R
A
12R
A
13R
A
14R
A
15R
NC
GND
NC
NC
NC
NC
CE
0R
CE
1R
SEM
R
,
R/W
R
OE
R
GND
GND
NC
3740 drw 02
NOTES:
1. All Vcc pins must be connected to power supply.
2. All GND pins must be connected to ground.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
GND
NC
I/O
7L
I/O
6L
I/O
5L
I/O
4L
I/O
3L
I/O
2L
GND
I/O1
L
I/O
0L
Vcc
GND
I/O
0R
I/O
1R
I/O
2R
Vcc
I/O
3R
I/O
4R
I/O
5R
I/O
6R
I/O
7R
NC
NC
NC
2
IDT70V08S/L
High-Speed 64K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
& Industrial
-0.5 to +4.6
Unit
V
Maximum Operating Temperature
and Supply Voltage
(1,2)
Grade
Commercial
Ambient
Temperature
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
Vcc
3.3V
+
0.3V
3.3V
+
0.3V
3740 tbl 02
T
BIAS
T
STG
I
OUT
-55 to +125
-65 to +150
50
o
C
C
Industrial
o
mA
3740 tbl 01
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact yours
sales office.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc + 0.3V.
Capacitance
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
(T
A
= +25°C, f = 1.0mhz)
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
3740 tbl 03
Output Capacitance
Pin Names
Left Port
CE
0L
, CE
1L
R/W
L
OE
L
A
0L
- A
15L
I/O
0L
-
I/O
7L
Right Port
CE
0R
, CE
1R
R/W
R
OE
R
A
0R
- A
15R
I/O
0R
-
I/O
7R
Names
Chip Enables
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
3740 tbl 04
NOTES:
1. This parameter is determined by device characterization but is not produc-
tion tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
Recommended DC Operating
Conditions
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
-0.3
(1)
Typ.
3.3
0
____
Max.
3.6
0
V
CC
+0.3
(2)
0.8
Unit
V
V
V
V
3740 tbl 05
SEM
L
INT
L
BUSY
L
SEM
R
INT
R
BUSY
R
M/S
V
CC
GND
____
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.3V.
3
IDT70V08S/L
High-Speed 64K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I – Chip Enable
(1,2)
CE
CE
0
V
IL
L
< 0.2V
V
IH
H
X
>V
CC
-0.2V
X
(3)
CE
1
Mode
Port Selected (TTL Active)
Port Selected (CMOS Active)
Port Deselected (TTL Inactive)
Port Deselected (TTL Inactive)
Port Deselected (CMOS Inactive)
Port Deselected (CMOS Inactive)
3740 tbl 06
V
IH
>V
CC
-0.2V
X
V
IL
X
(3)
<0.2V
NOTES:
1. Chip Enable references are shown above with the actual
CE
0
and CE
1
levels;
CE
is a reference only.
2. 'H' = V
IH
and 'L' = V
IL
.
3. CMOS standby requires 'X' to be either < 0.2V or >V
CC
-0.2V.
Truth Table II – Non-Contention Read/Write Control
Inputs
(1)
CE
(2)
H
L
L
X
R/W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
Outputs
I/O
0-7
High-Z
DATA
IN
DATA
OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
3740 tbl 07
Mode
NOTES:
1. A
0L
— A
15L
A
0R
— A
15R
2. Refer to Chip Enable Truth Table.
Truth Table III – Semaphore Read/Write Control
(1)
Inputs
(1)
CE
(2)
H
H
L
R/W
H
X
OE
L
X
X
SEM
L
L
L
Outputs
I/O
0-7
DATA
OUT
DATA
IN
______
Mode
Read Semaphore Flag Data Out
Write I/O
0
into Semaphore Flag
Not Allowed
3740 tbl 08
NOTES:
1. There are eight semaphore flags written to I/O
0
and read from all the I/Os (I/O
0
-I/O
7
). These eight semaphore flags are addressed by A
0
-A
2
.
2. Refer to Chip Enable Truth Table.
4
IDT70V08S/L
High-Speed 64K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
CC
= 3.3V ± 0.3V)
70V08S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 3.6V, V
IN
= 0V to V
CC
CE
(2)
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= +4mA
I
OH
= -4mA
Min.
___
70V08L
Min.
___
Max.
10
10
0.4
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
3740 tbl 09
___
___
___
___
2.4
2.4
NOTES:
1. At Vcc
<
2.0V, input leakages are undefined.
2. Refer to Chip Enable Truth Table.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1,6,7)
(V
CC
= 3.3V ± 0.3V)
Symbol
I
CC
Parameter
Dynamic Operating Current
(Both Ports Active)
Test Condition
CE
= V
IL
, Outputs Disabled
SEM
= V
IH
f = f
MAX
(3)
Version
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
70V08X15
Com'l Only
Typ.
(2)
Max
170
170
____
____
70V08X20
Com'l Only
Typ.
(2)
Max
165
165
____
____
Unit
mA
260
265
____
____
255
220
____
____
I
SB1
Standby Current
(Both Ports - TTL Level
Inputs)
CE
L
=
CE
R
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(3)
44
44
____
____
70
60
____
____
39
39
____
____
60
50
____
____
mA
I
SB2
Standby Current
(One Port - TTL Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
=
SEM
L
= V
IH
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
= SEM
L
> V
CC
- 0.2V
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled
f = f
MAX
(3)
115
115
____
____
160
145
____
____
105
105
____
____
155
140
____
____
mA
I
SB3
Full Standby Current (Both
Ports - All CMOS Level
Inputs)
1.0
0.2
____
____
6
3
____
____
1.0
0.2
____
____
6
3
____
____
mA
I
SB4
Full Standby Current
(One Port - All CMOS Level
Inputs)
115
115
____
____
155
140
____
____
105
105
____
____
150
135
____
____
mA
IND
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
2. V
CC
= 3.3V, T
A
= +25°C, and are not production tested. I
CCDC
= 90mA (Typ.)
3. At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
RC,
and using “AC Test Conditions" of input levels of GND
to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6. Refer to Chip Enable Truth Table.
7. Industrial temperature: for specific speeds, packages and powers contact your sales office.
3740 tbl 10a
5
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参数对比
与IDT70V08L15PF相近的元器件有:IDT70V08L35PF、IDT70V08S20PFI、IDT70V08L20PF、IDT70V08L20PFI、IDT70V08S35PF。描述及对比如下:
型号 IDT70V08L15PF IDT70V08L35PF IDT70V08S20PFI IDT70V08L20PF IDT70V08L20PFI IDT70V08S35PF
描述 Dual-Port SRAM, 64KX8, 15ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 35ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Dual-Port SRAM, 64KX8, 35ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 QFP QFP QFP QFP QFP QFP
包装说明 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
针数 100 100 100 100 100 100
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 3A991.B.2.B EAR99 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B EAR99
最长访问时间 15 ns 35 ns 20 ns 20 ns 20 ns 35 ns
JESD-30 代码 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100
JESD-609代码 e0 e0 e0 e0 e0 e0
长度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
内存密度 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 8 8 8 8 8 8
湿度敏感等级 3 3 3 3 3 3
功能数量 1 1 1 1 1 1
端子数量 100 100 100 100 100 100
字数 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words
字数代码 64000 64000 64000 64000 64000 64000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C 70 °C 85 °C 70 °C
组织 64KX8 64KX8 64KX8 64KX8 64KX8 64KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 240 240 240 240 240 240
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 20 20 20 20 20 20
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
Base Number Matches 1 1 1 1 1 1
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology)
I/O 类型 COMMON COMMON - COMMON COMMON COMMON
端口数量 2 2 - 2 2 2
输出特性 3-STATE 3-STATE - 3-STATE 3-STATE 3-STATE
封装等效代码 QFP100,.63SQ,20 QFP100,.63SQ,20 - QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20
电源 3.3 V 3.3 V - 3.3 V 3.3 V 3.3 V
最大待机电流 0.003 A 0.003 A - 0.003 A 0.006 A 0.006 A
最小待机电流 3 V 3 V - 3 V 3 V 3 V
最大压摆率 0.225 mA 0.16 mA - 0.22 mA 0.28 mA 0.195 mA
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