型号
- 型号
- 关键词
Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
厂商名称：IDT (Integrated Device Technology)
下载文档| 型号 | IDT70V659S15BC | IDT70V659S12DRI | IDT70V659S15BCI | IDT70V659S15BFI |
|---|---|---|---|---|
| 描述 | Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | Dual-Port SRAM, 128KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 | Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | BGA | QFP | BGA | BGA |
| 包装说明 | LBGA, BGA256,16X16,40 | 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 | LBGA, BGA256,16X16,40 | TFBGA, BGA208,17X17,32 |
| 针数 | 256 | 208 | 256 | 208 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 15 ns | 12 ns | 15 ns | 15 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | S-PBGA-B256 | S-PQFP-G208 | S-PBGA-B256 | S-PBGA-B208 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 长度 | 17 mm | 28 mm | 17 mm | 15 mm |
| 内存密度 | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit |
| 内存集成电路类型 | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM |
| 内存宽度 | 36 | 36 | 36 | 36 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端口数量 | 2 | 2 | 2 | 2 |
| 端子数量 | 256 | 208 | 256 | 208 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | - | -40 °C | -40 °C | -40 °C |
| 组织 | 128KX36 | 128KX36 | 128KX36 | 128KX36 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | LBGA | FQFP | LBGA | TFBGA |
| 封装等效代码 | BGA256,16X16,40 | QFP208,1.2SQ,20 | BGA256,16X16,40 | BGA208,17X17,32 |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | GRID ARRAY, LOW PROFILE | FLATPACK, FINE PITCH | GRID ARRAY, LOW PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 225 | 225 |
| 电源 | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.5 mm | 4.1 mm | 1.5 mm | 1.2 mm |
| 最大待机电流 | 0.015 A | 0.015 A | 0.015 A | 0.015 A |
| 最小待机电流 | 3.15 V | 3.15 V | 3.15 V | 3.15 V |
| 最大压摆率 | 0.44 mA | 0.515 mA | 0.49 mA | 0.49 mA |
| 最大供电电压 (Vsup) | 3.45 V | 3.45 V | 3.45 V | 3.45 V |
| 最小供电电压 (Vsup) | 3.15 V | 3.15 V | 3.15 V | 3.15 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) |
| 端子形式 | BALL | GULL WING | BALL | BALL |
| 端子节距 | 1 mm | 0.5 mm | 1 mm | 0.8 mm |
| 端子位置 | BOTTOM | QUAD | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 |
| 宽度 | 17 mm | 28 mm | 17 mm | 15 mm |
| Base Number Matches | 1 | 1 | 1 | 1 |