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IDT70V9369L12PFG

Dual-Port SRAM, 16KX18, 12ns, CMOS, PQFP100, TQFP-100

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
QFP
包装说明
LQFP,
针数
100
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
最长访问时间
12 ns
其他特性
FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码
R-PQFP-G100
JESD-609代码
e3
长度
20 mm
内存密度
294912 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
18
湿度敏感等级
3
功能数量
1
端子数量
100
字数
16384 words
字数代码
16000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
16KX18
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.6 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
MATTE TIN
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
30
宽度
14 mm
Base Number Matches
1
文档预览
HIGH-SPEED 3.3V 16K x 18
SYNCHRONOUS PIPELINED
DUAL-PORT STATIC RAM
Features:
IDT70V9369L
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 6/7.5/9/12ns (max.)
– Industrial: 7.5ns (max.)
Low-power operation
– IDT70V9369L
Active: 500mW (typ.)
Standby: 1.5mW (typ.)
Flow-Through or Pipelined output mode on either port via
the
FT/PIPE
pins
Counter enable and reset features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 4ns setup to clock and 0ns hold on all control, data, and
address inputs
– Data input, address, and control registers
– Fast 6.5ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 12ns cycle time, 83MHz operation in Pipelined output mode
Separate upper-byte and lower-byte controls for
multiplexed bus and bus matching compatibility
LVTTL- compatible, single 3.3V (±0.3V) power supply
Industrial temperature range (–40°C to +85°C) is
available for selected speeds
Available in a 100-pin Thin Quad Flatpack (TQFP)
Functional Block Diagram
R/
W
L
UB
L
CE
0L
R/
W
R
UB
R
CE
0R
CE
1L
LB
L
OE
L
1
0
0/1
1
0
0/1
CE
1R
LB
R
OE
R
FT
/PIPE
L
0/1
1b 0b
b a
1a 0a
0a 1a
a
0b 1b
b
0/1
FT
/PIPE
R
I/O
9L
-I/O
17L
I/O
0L
-I/O
8L
I/O
9R
-I/O
17R
I/O
Control
I/O
Control
I/O
0R
-I/O
8R
A
13R
Counter/
Address
Reg.
MEMORY
ARRAY
Counter/
Address
Reg.
A
0R
CLK
R
A
13L
A
0L
CLK
L
ADS
L
CNTEN
L
CNTRST
L
ADS
R
CNTEN
R
CNTRST
R
5648 drw 01
OCTOBER 2004
1
©2004 Integrated Device Technology, Inc.
DSC-5648/2
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Description:
The IDT70V9369 is a high-speed 16K x 18 bit synchronous
Dual-Port RAM. The memory array utilizes Dual-Port memory cells
to allow simultaneous access of any address from both ports.
Registers on control, data, and address inputs provide minimal setup
and hold times. The timing latitude provided by this approach allows
systems to be designed with very short cycle times.
With an input data register, the IDT70V9369 has been optimized for
applications having unidirectional or bidirectional data flow in bursts. An
automatic power down feature, controlled by
CE
0
and CE
1,
permits the
on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 500mW of power.
Pin Configuration
(1,2,3)
Index
A
9L
A
10L
A
11L
A
12L
A
13L
NC
NC
LB
L
UB
L
CE
0L
CE
1L
CNTRST
L
R/W
L
OE
L
V
DD
FT/PIPE
L
I/O
17L
I/O
16L
V
SS
I/O
15L
I/O
14L
I/O
13L
I/O
12L
I/O
11L
I/O
10L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
75
2
74
3
73
1
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
A
8L
A
7L
A
6L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
CNTEN
L
CLK
L
ADS
L
V
SS
Vss
ADS
R
CLK
R
CNTEN
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
70V9369PF
PN100-1
(4)
100-Pin TQFP
Top View
(5)
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
01/09/02
A
8R
A
9R
A
10R
A
11R
A
12R
A
13R
NC
NC
LB
R
UB
R
CE
0R
CE
1R
CNTRST
R
R/W
R
V
SS
OE
R
FT/PIPE
R
I/O
17R
V
SS
I/O
16R
I/O
15R
I/O
14R
I/O
13R
I/O
12R
I/O
11R
.
I/O
9L
I/O
8L
V
DD
I/O
7L
I/O
6L
I/O
5L
I/O
4L
I/O
3L
I/O
2L
V
SS
I/O
1L
I/O
0L
V
SS
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
I/O
6R
V
DD
I/O
7R
I/O
8R
I/O
9R
I/O
10R
NOTES:
1. All V
DD
pins must be connected to power supply.
2. All V
SS
pins must be connected to ground.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
5648 drw 02
6.42
2
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
CE
0L,
CE
1L
R/W
L
OE
L
A
0L
- A
13L
I/O
0L
- I/O
17L
CLK
L
UB
L
LB
L
ADS
L
CNTEN
L
CNTRST
L
FT/PIPE
L
Right Port
CE
0R,
CE
1R
R/W
R
OE
R
A
0R
- A
13R
I/O
0R
- I/O
17R
CLK
R
UB
R
LB
R
ADS
R
CNTEN
R
CNTRST
R
FT/PIPE
R
V
DD
V
SS
Names
Chip Enables
(2)
Read/Write Enable
Output Enable
Address
Data Input/Output
Clock
Upper Byte Select
(1)
Lower Byte Select
(1)
Address Strobe Enable
Counter Enable
Counter Reset
Flow-Through / Pipeline
Power (3.3V)
Ground (0V)
5648 tbl 01
NOTES:
1.
LB
and
UB
are single buffered regardless of state of
FT/PIPE.
2.
CE
0
and CE
1
are single buffered when
FT/PIPE
= V
IL
,
CE
0
and CE
1
are double buffered when
FT/PIPE
= V
IH,
i.e., the signals
take two cycles to deselect.
Truth Table I—Read/Write and Enable Control
(1,2,3)
OE
X
X
X
X
X
X
L
L
L
H
CLK
X
CE
0
H
X
L
L
L
L
L
L
L
L
CE
1
X
L
H
H
H
H
H
H
H
H
UB
X
X
H
L
H
L
L
H
L
L
LB
X
X
H
H
L
L
H
L
L
L
R/W
X
X
X
L
L
L
H
H
H
X
Upper Byte
I/O
9-17
(4)
High-Z
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
High-Z
Lower Byte
I/O
0-8
(5)
High-Z
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
DATA
OUT
High-Z
Deselected–Power Down
Deselected–Power Down
Both Bytes Deselected
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Read Lower Byte Only
Read Both Bytes
Outputs Disabled
5648 tbl 02
MODE
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
ADS, CNTEN, CNTRST
= X.
3.
OE
is an asynchronous input signal.
6.42
3
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Truth Table II—Address Counter Control
(1,2,6)
Address
An
X
X
X
Previous
Internal
Address
X
An
An + 1
X
Internal
Address
Used
An
An + 1
An + 1
A
0
CLK
(6
)
ADS
L
(4)
H
H
X
CNTEN
X
L
(5)
H
X
CNTRST
H
H
H
L
(4)
I/O
(3)
D
I/O
(n)
D
I/O
(n+1)
D
I/O
(n+1)
D
I/O
(0)
External Address Used
Counter Enabled—Internal Address generation
External Address Blocked—Counter disabled (An + 1 reused)
Counter Reset to Address 0
5648 tbl 03
MODE
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
CE
0
,
LB, UB,
and
OE
= V
IL
; CE
1
and R/W = V
IH
.
3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.
4.
ADS
and
CNTRST
are independent of all other signals including
CE
0
, CE
1
,
UB
and
LB.
5. The address counter advances if
CNTEN
= V
IL
on the rising edge of CLK, regardless of all other signals including
CE
0
, CE
1
,
UB
and
LB.
6. While an external address is being loaded (ADS = V
IL
), R/W = V
IH
is recommended to ensure data is not written arbitrarily.
Recommended Operating
Temperature and Supply Voltage
(1)
Grade
Commercial
Industrial
Ambient
Temperature
(1)
0 C to +70 C
-40 C to +85 C
O
O
O
O
Recommended DC Operating
Conditions
Symbol
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0V
-0.3
(1)
Typ.
3.3
0
____
Max.
3.6
0
V
DD
+0.3V
(2)
0.8
Unit
V
V
V
V
5648 tbl 05
GND
0V
0V
V
DD
3.3V
+
0.3V
3.3V
+
0.3V
5648 tbl 04
V
DD
Vss
V
IH
V
IL
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
____
NOTES:
1. V
IL
> -1.5V for pulse width less than 10 ns.
2. V
TERM
must not exceed V
DD
+0.3V.
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect to
GND
Temperature
Under Bias
Storage
Temperature
Junction Temperature
DC Output Current
Commercial
& Industrial
-0.5 to +4.6
Unit
V
Capacitance
(1)
Symbol
C
IN
(T
A
= +25°C, f = 1.0MH
Z
)
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
9
10
Unit
pF
pF
5648 tbl 07
T
BIAS
(3)
T
STG
T
JN
I
OUT
-55 to +125
-65 to +150
+150
50
o
C
C
OUT
(2)
o
C
C
o
mA
5648 tbl 06
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. C
OUT
also references C
I/O
.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
DD
+0.3V.
3. Ambient Temperature Under DC Bias. No AC Conditions. Chip deselect.
6.42
4
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
DD
= 3.3V ± 0.3V)
70V9369L
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
V
DD
= 3.6V, V
IN
= 0V to V
DD
CE
O
= V
IH
or CE
1
= V
IL
, V
OUT
= 0V to V
DD
I
OL
= +4mA
I
OH
= -4mA
Test Conditions
Min.
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
5648 tbl 08
___
___
2.4
NOTE:
1. At V
DD
< 2.0V input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range
(3)
(V
DD
= 3.3V ± 0.3V)
70V9369L6
Com'l Only
Symbol
I
DD
Parameter
Dynamic Operating
Current (Both
Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby
Current (One
Port - TTL
Level Inputs)
Full Standby
Current (Both
Ports - CMOS
Level Inputs)
Full Standby
Current (One
Port - CMOS
Level Inputs)
Test Condition
CE
L
and
CE
R
= V
IL
,
Outputs Disabled,
f = f
MAX
(1)
CE
L
=
CE
R
= V
IH
f = f
MAX
(1)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs
Disabled, f=f
MAX
(1)
Both Ports
CE
L
and
CE
R
> V
DD
- 0.2V,
V
IN
> V
DD
- 0.2V or
V
IN
< 0.2V, f = 0
(2)
Version
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
L
L
L
L
L
L
L
L
L
L
____
____
70V9369L7
Com'l
& Ind
Typ.
(4)
200
200
65
65
140
140
0.4
0.4
130
130
Max.
290
335
100
115
210
240
5
15
200
230
70V9369L9
Com'l Only
Typ.
(4)
180
____
70V9369L12
Com'l Only
Typ.
(4)
150
____
Typ.
(4)
220
____
Max.
350
____
Max.
225
____
Max.
205
____
Unit
mA
I
SB1
70
____
130
____
50
____
65
____
40
____
50
____
mA
I
SB2
150
____
250
____
110
____
150
____
100
____
140
____
mA
I
SB3
0.4
____
5
____
0.4
____
5
____
0.4
____
5
____
mA
I
SB4
COM'L
CE
"A"
< 0.2V and
CE
"B"
> V
DD
- 0.2V
(5)
IND
V
IN
> V
DD
- 0.2V or
V
IN
< 0.2V, Active Port,
Outputs Disabled, f = f
MAX
(1)
140
240
100
____
140
____
90
____
130
____
mA
5648 tbl 09
NOTES:
1. At f = f
MAX
, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/t
CYC
, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. V
DD
= 3.3V, T
A
= 25°C for Typ, and are not production tested. I
DD DC
(f=0) = 90mA (Typ).
5.
CE
X
= V
IL
means
CE
0X
= V
IL
and CE
1X
= V
IH
CE
X
= V
IH
means
CE
0X
= V
IH
or CE
1X
= V
IL
CE
X
< 0.2V means
CE
0X
< 0.2V and CE
1X
> V
DD
- 0.2V
CE
X
> V
DD
- 0.2V means
CE
0X
> V
DD
- 0.2V or CE
1X
< 0.2V
"X" represents "L" for left port or "R" for right port.
6.42
5
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参数对比
与IDT70V9369L12PFG相近的元器件有:IDT70V9369L7PFG、IDT70V9369L7PFGI、IDT70V9369L6PRF、IDT70V9369L7PRFI、IDT70V9369L7PRF、IDT70V9369L9PRF、IDT70V9369L12PRF。描述及对比如下:
型号 IDT70V9369L12PFG IDT70V9369L7PFG IDT70V9369L7PFGI IDT70V9369L6PRF IDT70V9369L7PRFI IDT70V9369L7PRF IDT70V9369L9PRF IDT70V9369L12PRF
描述 Dual-Port SRAM, 16KX18, 12ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 16KX18, 7.5ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 16KX18, 7.5ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 16KX18, 6.5ns, CMOS, PQFP128, TQFP-128 Dual-Port SRAM, 16KX18, 7.5ns, CMOS, PQFP128, TQFP-128 Dual-Port SRAM, 16KX18, 7.5ns, CMOS, PQFP128, TQFP-128 Dual-Port SRAM, 16KX18, 9ns, CMOS, PQFP128, TQFP-128 Dual-Port SRAM, 16KX18, 12ns, CMOS, PQFP128, TQFP-128
是否无铅 不含铅 不含铅 不含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 符合 符合 符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 QFP QFP QFP QFP QFP QFP QFP QFP
包装说明 LQFP, LQFP, LQFP, LFQFP, LFQFP, LFQFP, LFQFP, LFQFP,
针数 100 100 100 128 128 128 128 128
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
最长访问时间 12 ns 7.5 ns 7.5 ns 6.5 ns 7.5 ns 7.5 ns 9 ns 12 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G128 R-PQFP-G128 R-PQFP-G128 R-PQFP-G128 R-PQFP-G128
JESD-609代码 e3 e3 e3 e0 e0 e0 e0 e0
长度 20 mm 20 mm 20 mm 22 mm 22 mm 22 mm 22 mm 22 mm
内存密度 294912 bit 294912 bit 294912 bit 294912 bit 294912 bit 294912 bit 294912 bit 294912 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 18 18 18 18 18 18 18 18
湿度敏感等级 3 3 3 3 3 3 3 3
功能数量 1 1 1 1 1 1 1 1
端子数量 100 100 100 128 128 128 128 128
字数 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words
字数代码 16000 16000 16000 16000 16000 16000 16000 16000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C 70 °C 85 °C 70 °C 70 °C 70 °C
组织 16KX18 16KX18 16KX18 16KX18 16KX18 16KX18 16KX18 16KX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP LQFP LFQFP LFQFP LFQFP LFQFP LFQFP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 240 240 240 240 240
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 MATTE TIN MATTE TIN MATTE TIN TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 0.65 mm 0.65 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 30 30 30 20 20 20 20 20
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Base Number Matches 1 1 1 1 1 1 - -
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器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
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