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IDT72404L25SO8

FIFO, 64X5, 34ns, Asynchronous, CMOS, PDSO18, SOIC-18

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
厂商名称
IDT (Integrated Device Technology)
零件包装代码
SOIC
包装说明
SOIC-18
针数
18
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
34 ns
其他特性
FALL THRU 40NS
周期时间
40 ns
JESD-30 代码
R-PDSO-G18
JESD-609代码
e0
长度
11.55 mm
内存密度
320 bit
内存宽度
5
功能数量
1
端子数量
18
字数
64 words
字数代码
64
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
64X5
输出特性
3-STATE
可输出
YES
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
认证状态
Not Qualified
座面最大高度
2.65 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
宽度
7.5 mm
文档预览
CMOS PARALLEL FIFO
64 x 4 and 64 x 5
IDT72401
IDT72402
IDT72403
IDT72404
FEATURES:
First-ln/First-Out Dual-Port memory
64 x 4 organization (IDT72401/72403)
64 x 5 organization (IDT72402/72404)
RAM-based FIFO with low falI-through time
Low-power consumption
— Active: 175mW (typ.)
Maximum shift rate — 45MHz
High data output drive capability
Asynchronous and simultaneous read and write
Fully expandable by bit width
Fully expandable by word depth
IDT72403/72404 have Output Enable pin to enable output data
High-speed data communications applications
High-performance CMOS technology
Available in CERDIP, plastic DIP and SOIC
Military product compliant to MlL-STD-883, Class B
Standard Military Drawing #5962-86846 and
5962-89523 is listed on this function.
Industrial temperature range (–40°C to +85°C) is available
°
°
(plastic packages only)
DESCRIPTION:
The IDT72401 and IDT72403 are asynchronous high-performance
First-ln/First-Out memories organized 64 words by 4 bits. The IDT72402 and
IDT72404 are asynchronous high-performance First-ln/First-Out memories
organized as 64 words by 5 bits. The IDT72403 and IDT72404 also have an
Output Enable (OE) pin. The FlFOs accept 4-bit or 5-bit data at the data input
(D
0
-D
3
,
4
). The stored data stack up on a first-in/first-out basis.
A Shift Out (SO) signal causes the data at the next to last word to be shifted
to the output while all other data shifts down one location in the stack. The Input
Ready (IR) signal acts like a flag to indicate when the input is ready for new
data (IR = HIGH) or to signal when the FIFO is full (IR = LOW). The IR signal
can also be used to cascade multiple devices together. The Output Ready (OR)
signal is a flag to indicate that the output remains valid data (OR = HIGH) or
to indicate that the FIFO is empty (OR = LOW). The OR can also be used to
cascade multiple devices together.
Width expansion is accomplished by logically ANDing the IR and OR signals
to form composite signals.
Depth expansion is accomplished by tying the data inputs of one device to
the data outputs of the previous device. The IR pin of the receiving device is
connected to the SO pin of the sending device and the OR pin of the sending
device is connected to the Shift In (SI) pin of the receiving device.
Reading and writing operations are completely asynchronous allowing the
FIFO to be used as a buffer between two digital machines of widely varying
operating frequencies. The 45MHz speed makes these FlFOs ideal for high-
speed communication and controller applications.
Military grade product is manufactured in compliance with the latest revision
of MIL-STD-883, Class B.
FUNCTIONAL BLOCK DIAGRAM
SI
IR
INPUT
CONTROL
LOGIC
WRITE POINTER
WRITE MULTIPLEXER
OUTPUT
ENABLE
OE
(IDT72403
and IDT72404)
D
0-3
DATA
IN
D
4
(IDT72402
and IDT72404)
MR
MEMORY
ARRAY
Q
0-3
DATA
IN
Q
4
(IDT72402
and IDT72404)
MASTER
RESET
READ MULTIPLEXER
READ POINTER
MASTER
RESET
SO
OR
2747 drw01
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc.
FAST is a trademark of National Semiconductor, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
2003
Integrated Device Technology, Inc.
All rights reserved. Product specifications subject to change without notice.
JULY 2003
DSC-2747/8
IDT72401/72402/72403/72404
CMOS PARALLEL FIFO 64 x 4, 64 x 5
MILITARY AND COMMERCIAL
TEMPERATURE RANGES
PIN CONFIGURATIONS
IDT72401/IDT72403
NC/OE
(1)
IR
SI
D
0
D
1
D
2
D
3
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
IDT72402
(3)
/IDT72404
Vcc
SO
OR
Q
0
Q
1
Q
2
Q
3
MR
NC/OE
(2)
IR
SI
D
0
D
1
D
2
D
3
D
4
GND
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
2747 drw 03
Vcc
SO
OR
Q
0
Q
1
Q
2
Q
3
Q
4
MR
2747 drw 02
NOTES:
1. Pin 1: NC - No Connection IDT72401,
OE
- IDT72403
2. Pin 1: NC - No Connection IDT72402,
OE
- IDT72404
3. IDT72402 is not available in CERDIP (D18-1)
PLASTIC DIP (P16-1, ORDER CODE: P)
CERDIP (D16-1, ORDER CODE: D)
SOIC (SO16-1, ORDER CODE: SO)
TOP VIEW
PLASTIC DIP (P18-1, ORDER CODE: P)
CERDIP (D18-1, ORDER CODE: D)
SOIC (SO18-1, ORDER CODE: SO)
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
I
OUT
Rating
Terminal Voltage with
Respect to GND
Storage Temp.
DC Output Current
Commercial
–0.5 to +7.0
–55 to +125
–50 to +50
Military
–0.5 to +7.0
–65 to +150
–50 to +50
Unit
V
°C
mA
RECOMMENDED OPERATING
CONDITIONS
Symbol
V
CC
GND
V
IH
V
IL
(1)
T
A
T
A
Parameter
Supply Voltage Commercial/Military
Supply Voltage
Input High Voltage
Input High Voltage
Operating Temperature Commercial
Operating Temperature Military
Min.
4.5
0
2.0
0
–55
Typ.
5.0
0
Max.
5.5
0
0.8
70
125
Unit
V
V
V
V
°C
°C
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
DC ELECTRICAL CHARACTERISTICS
(Commercial: V
CC
= 5.0V ± 10%, T
A
= 0°C to +70°C; Military: V
CC
= 5.0V ± 10%, T
A
= –55°C to +125°C)
IDT72401
IDT72402
IDT72403
IDT72404
Commercial
f
IN
= 45, 35, 25, 15, 10 MHz
Symbol
I
IL
I
IH
V
OL
V
OH
I
OS
(1)
I
HZ
(2)
I
LZ
(2)
I
CC
(3,4)
Parameter
Low-Level Input Current
High-Level Input Current
Low-Level Output Voltage
High-Level Output Voltage
Output Short-Circuit Current
HIGH Impedance Output Current
LOW Impedance Output Current
Active Supply Current
Test Conditions
V
CC
= Max., GND
V
I
V
CC
V
CC
= Max., GND
V
I
V
CC
V
CC
= Min., I
OL
= 8mA
V
CC
= Min., I
OH
= –4mA
V
CC
= Max., V
O
= GND
V
CC
= Max., V
O
= 2.4V
V
CC
= Max., V
O
= 0.4V
V
CC
= Max., f = 10MHz
Min.
–10
2.4
–20
–20
Max.
10
0.4
–110
20
35
IDT72401
IDT72403
(5)
IDT72404
(5)
Military
f
IN
= 35, 25, 15, 10 MHz
Min.
–10
2.4
–20
–20
Max.
10
0.4
–110
20
45
Unit
µA
µA
V
V
mA
µA
µA
mA
NOTES:
1. Not more than one output should be shorted at a time and duration of the short-circuit should not exceed one second. Guaranteed but not tested.
2. IDT72403 and IDT72404 only.
3. Tested with outputs open (I
OUT
= 0).
OE
is HIGH for IDT72403/72404.
4. For frequencies greater than 10MHz, I
CC
= 35mA + (1.5mA x [f –10MHz]) commercial, and I
CC
= 45mA + (1.5mA x [f –10MHz]) military.
5. Military availability for IDT72403 is 10MHz, 35MHz, for IDT72404 is 15MHz, 35MHz. IDT72401 is available for all MHz.
2
IDT72401/72402/72403/72404
CMOS PARALLEL FIFO 64 x 4, 64 x 5
MILITARY AND COMMERCIAL
TEMPERATURE RANGES
OPERATING CONDITIONS
(Commercial: V
CC
= 5.0V ± 10%, T
A
= 0°C to +70°C; Military: V
CC
= 5.0V ± 10%, T
A
= –55°C to +125°C)
Commercial
IDT72401L45
IDT72402L45
IDT72403L45
IDT72404L45
Min.
Max.
9
11
0
13
9
11
20
10
3
13
0
IDT72401L35
IDT72402L35
IDT72403L35
IDT72404L35
Min.
Max.
9
17
0
15
9
17
25
10
3
15
0
Commercial and Military
(5)
IDT72401L25
IDT72401L15
IDT72402L25
IDT72402L15
IDT72403L25
IDT72403L15
IDT72404L25
IDT72404L15
Min.
Max.
Min.
Max.
11
11
24
0
20
11
24
25
10
5
20
0
25
0
30
11
25
25
25
5
30
0
IDT72401L10
IDT72402L10
IDT72403L10
IDT72404L10
Min.
Max.
11
30
0
40
11
25
30
35
5
30
0
Symbol
t
SIH
(1)
t
SIL
t
IDS
t
IDH
t
SOH
(1)
t
SOL
t
MRW
t
MRS
t
SIR
t
HIR
t
SOR
(4)
Parameter
Shift in HIGH Time
Shift in LOW TIme
Input Data Set-up
Input Data Hold Time
Shift Out HIGH Time
Shift Out LOW Time
Master Reset Pulse
Master Reset Pulse to SI
Data Set-up to IR
Data Hold from IR
Data Set-up to OR HIGH
Figure
2
2
2
2
5
5
8
8
4
4
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC ELECTRICAL CHARACTERISTICS
(Commercial: V
CC
= 5.0V ± 10%, T
A
= 0°C to +70°C; Military: V
CC
= 5.0V ± 10%, T
A
= –55°C to +125°C)
Commercial
IDT72401L45
IDT72402L45
IDT72403L45
IDT72404L45
Min.
Max.
5
9
9
45
18
18
45
18
19
19
30
25
25
20
12
12
IDT72401L35
IDT72402L35
IDT72403L35
IDT72404L35
Min.
Max.
5
9
9
35
18
20
35
18
20
20
34
28
28
20
15
12
Commercial and Military
(5)
IDT72401L25
IDT72401L15
IDT72402L25
IDT72402L15
IDT72403L25
IDT72403L15
IDT72404L25
IDT72404L15
Min.
Max.
Min.
Max.
5
11
11
25
21
28
25
19
34
34
40
35
35
25
20
15
5
11
11
15
35
40
15
35
40
40
65
35
35
35
30
25
IDT72401L10
IDT72402L10
IDT72403L10
IDT72404L10
Min.
Max.
5
11
11
10
40
45
10
40
55
55
65
40
40
40
35
30
Symbol
f
IN
t
IRL
(1)
t
IRH
(1)
f
OUT
t
ORL
(1)
t
ORH
(1)
t
ODH
t
ODS
t
PT
t
MRORL
t
MRIRH
t
MRQ
t
OOE
(3)
t
HZOE
(3,4)
t
IPH
(2,4)
t
OPH
(2,4)
Shift In Rate
Parameter
Shift In to Input Ready LOW
Shift In to Input Ready HIGH
Shift Out Rate
Shift Out to Output Ready LOW
Shift Out to Output Ready HIGH
Output Data Hold (Previous Word)
Output Data Shift (Next Word)
Data Throughput or "Fall-Through"
Master Reset to OR LOW
Master Reset to IR HIGH
Master Reset to Data Output LOW
Output Valid from
OE
LOW
Output High-Z from
OE
HIGH
Input Ready Pulse HIGH
Output Ready Pulse HIGH
Figure
2
2
2
5
5
5
5
5
4, 7
8
8
8
9
9
4
7
Unit
MHz
ns
ns
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
1. Since the FIFO is a very high-speed device, care must be excercised in the design of the hardware and timing utilized within the design. Device grounding and decoupling
are crucial to correct operation as the FIFO will respond to very small glitches due to long reflective lines, high capacitances and/or poor supply decoupling and grounding.
A monolithic ceramic capacitor of 0.1µF directly between V
CC
and GND with very short lead length is recommended.
2. This parameter applies to FIFOs communicating with each other in a cascaded mode. IDT FIFOs are guaranteed to cascade with other IDT FIFOs of like speed grades.
3. IDT72403 and IDT72404 only.
4. Guaranteed by design but not currently tested.
5. Military availability for IDT72403 is 10MHz, 35MHz, for IDT72404 is 15MHz, 35MHz. IDT72401 is available for all MHz.
3
IDT72401/72402/72403/72404
CMOS PARALLEL FIFO 64 x 4, 64 x 5
MILITARY AND COMMERCIAL
TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figure 1
ALL INPUT PULSES:
3.0V
GND
90%
10%
90%
10%
<3ns
<3ns
2747 drw 04
5V
1.1KΩ
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
5
7
Unit
pF
pF
OUTPUT
560Ω
30pF*
2747 drw 05
NOTE
:
1. Characterized values, not currently tested.
or equivalent circuit
Figure 1. AC Test Load
*Including scope and jig
SIGNAL DESCRIPTIONS
INPUTS:
DATA INPUT (D
0
-
3
,
4
)
Data input lines. The IDT72401 and IDT72403 have a 4-bit data input. The
IDT72402 and IDT72404 have a 5-bit data input.
INPUT READY (IR)
When Input Ready is HIGH, the FIFO is ready for new input data to be written
to it. When IR is LOW the FIFO is unavailable for new input data. IR is also used
to cascade many FlFOs together, as shown in Figures 10 and 11.
OUTPUT READY (OR)
When Output Ready is HIGH, the output (Q
0
-
3
,
4
) contains valid data. When
OR is LOW, the FIFO is unavailable for new output data. OR is also used to
cascade many FlFOs together, as shown in Figures 10 and 11.
OUTPUT ENABLE (OE) (IDT72403 AND IDT72404 ONLY)
Output enable is used to read FIFO data onto a bus.
OE
is active LOW.
CONTROLS:
SHIFT IN (SI)
Shift In controls the input of the data into the FIFO. When SI is HIGH, data
can be written to the FIFO via the D
0
-
3
,
4
lines.
SHIFT OUT (SO)
Shift Out controls the output of data of the FIFO. When SO is HIGH, data can
be read from the FIFO via the Data Output (Q
0
-
3
,
4
) lines.
MASTER RESET (MR)
Master Reset clears the FIFO of any data stored within. Upon power up, the
FIFO should be cleared with a
MR. MR
is active LOW.
4
OUTPUTS:
DATA OUTPUT (Q
0
-
3
,
4
)
Data Output lines. The IDT72401 and IDT72403 have a 4-bit data output.
The IDT72402 and IDT72404 have a 5-bit data output.
IDT72401/72402/72403/72404
CMOS PARALLEL FIFO 64 x 4, 64 x 5
MILITARY AND COMMERCIAL
TEMPERATURE RANGES
FUNCTIONAL DESCRIPTION
These 64 x 4 and 64 x 5 FIFOs are designed using a dual port RAM
architecture as opposed to the traditional shift register approach. This FIFO
architecture has a write pointer, a read pointer and control logic, which allow
simultaneous read and write operations. The write pointer is incremented by
the falling edge of the Shift In (Sl) control; the read pointer is incremented by the
falling edge of the Shift Out (SO). The Input Ready (IR) signals when the FIFO
has an available memory location; Output Ready (OR) signals when there is
valid data on the output. Output Enable (OE) provides the capability of three-
stating the FIFO outputs.
FIFO RESET
The FIFO must be reset upon power up using the Master Reset (MR) signal.
This causes the FlFO to enter an empty state, signified by Output Ready (OR)
being LOW and Input Ready (IR) being HIGH. In this state, the data outputs
(Q
0
-
3
,
4
) will be LOW.
DATA INPUT
Data is shifted in on the LOW-to-HlGH transition of Shift In (Sl). This loads
input data into the first word location of the FIFO and causes Input Ready (IR)
to go LOW. On the HlGH-to-LOW transition of SI, the write pointer is moved to
the next word position and IR goes HIGH, indicating the readiness to accept new
data. If the FIFO is full, IR will remain LOW until a word of data is shifted out.
DATA OUTPUT
Data is shifted out on the HlGH-to-LOW transition of Shift Out (SO). This causes
the internal read pointer to be advanced to the next word location. If data is
present, valid data will appear on the outputs and Output Ready (OR) will go
HIGH. If data is not present, OR will stay LOW indicating the FIFO is empty. The
last valid word read from the FIFO will remain at the FlFOs output when it is empty.
When the FIFO is not empty, OR goes LOW on the LOW-to-HIGH transition of
SO. Previous data remains on the output until the HIGH-to-LOW transition of
SO).
FALL THROUGH MODE
The FIFO operates in a fall-through mode when data gets shifted into an empty
FIFO. After a fall-through delay the data propagates to the output. When the
data reaches the output, the Output Ready (OR) goes HIGH. Fall-through mode
also occurs when the FIFO is completely full. When data is shifted out of the full
FIFO, a location is available for new data. After a fall-through delay, the Input
Ready (IR) goes HIGH. If Shift In (SI) is HIGH, the new data can be written
to the FIFO.
Since these FlFOs are based on an internal dual-port RAM architecture with
separate read and write pointers, the fall-through time (t
PT
) is one cycle long.
A word may be written into the FIFO on a clock cycle and can be accessed on
the next clock cycle.
1/f
IN
t
SIH
SI
t
SIL
1/f
IN
t
IRH
IR
t
IDS
INPUT DATA
2747 drw 06
t
IDH
t
IRL
Figure 2. Input Timing
SI
(7)
(2)
(4)
(1)
IR
(3)
(5)
(6)
INPUT DATA
STABLE DATA
2747 drw 07
NOTES:
1. IR HIGH indicates space is available and a SI pulse may be applied.
2. Input Data is loaded into the first word.
3. IR goes LOW indicating the first word is full.
4. The write pointer is incremented.
5. The FIFO is ready for the next word.
6. If the FIFO is full then the IR remains LOW.
7. SI pulses applied while IR is LOW will be ignored (see Figure 4).
Figure 3. The Mechanism of Shifting Data Into the FIFO
5
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参数对比
与IDT72404L25SO8相近的元器件有:IDT72402L35SO8、IDT72402L25SO8、IDT72404L15SO8、IDT72402L15SO8、IDT72402L10SO8、IDT72402L45SO8、IDT72404L10SO8。描述及对比如下:
型号 IDT72404L25SO8 IDT72402L35SO8 IDT72402L25SO8 IDT72404L15SO8 IDT72402L15SO8 IDT72402L10SO8 IDT72402L45SO8 IDT72404L10SO8
描述 FIFO, 64X5, 34ns, Asynchronous, CMOS, PDSO18, SOIC-18 FIFO, 64X5, 20ns, Asynchronous, CMOS, PDSO18, SOIC-18 FIFO, 64X5, 34ns, Asynchronous, CMOS, PDSO18, SOIC-18 FIFO, 64X5, 40ns, Asynchronous, CMOS, PDSO18, SOIC-18 FIFO, 64X5, 40ns, Asynchronous, CMOS, PDSO18, SOIC-18 FIFO, 64X5, 55ns, Asynchronous, CMOS, PDSO18, SOIC-18 FIFO, 64X5, 19ns, Asynchronous, CMOS, PDSO18, SOIC-18 FIFO, 64X5, 55ns, Asynchronous, CMOS, PDSO18, SOIC-18
零件包装代码 SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC
包装说明 SOIC-18 SOP, SOP, SOP, SOP, SOP, SOP, SOP,
针数 18 18 18 18 18 18 18 18
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 34 ns 20 ns 34 ns 40 ns 40 ns 55 ns 19 ns 55 ns
其他特性 FALL THRU 40NS FALL THRU 34NS FALL THRU 40NS FALL THRU 65NS FALL THRU 65NS FALL THRU 65NS FALL THRU 30NS FALL THRU 65NS
周期时间 40 ns 28.57 ns 40 ns 66.67 ns 66.67 ns 100 ns 22.22 ns 100 ns
JESD-30 代码 R-PDSO-G18 R-PDSO-G18 R-PDSO-G18 R-PDSO-G18 R-PDSO-G18 R-PDSO-G18 R-PDSO-G18 R-PDSO-G18
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 11.55 mm 11.55 mm 11.55 mm 11.55 mm 11.55 mm 11.55 mm 11.55 mm 11.55 mm
内存密度 320 bit 320 bit 320 bit 320 bit 320 bit 320 bit 320 bit 320 bit
内存宽度 5 5 5 5 5 5 5 5
功能数量 1 1 1 1 1 1 1 1
端子数量 18 18 18 18 18 18 18 18
字数 64 words 64 words 64 words 64 words 64 words 64 words 64 words 64 words
字数代码 64 64 64 64 64 64 64 64
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 64X5 64X5 64X5 64X5 64X5 64X5 64X5 64X5
输出特性 3-STATE TOTEM POLE TOTEM POLE 3-STATE TOTEM POLE TOTEM POLE TOTEM POLE 3-STATE
可输出 YES NO NO YES NO NO NO YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP SOP SOP SOP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.65 mm 2.65 mm 2.65 mm 2.65 mm 2.65 mm 2.65 mm 2.65 mm 2.65 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm 7.5 mm
厂商名称 IDT (Integrated Device Technology) - - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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