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IDT72413L25PB

Bi-Directional FIFO, 64X5, Asynchronous, CMOS, PDIP20

器件类别:存储    存储   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
Reach Compliance Code
unknown
最大时钟频率 (fCLK)
25 MHz
JESD-30 代码
R-PDIP-T20
JESD-609代码
e0
内存集成电路类型
BI-DIRECTIONAL FIFO
内存宽度
5
端子数量
20
字数
64 words
字数代码
64
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
64X5
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP20,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
电源
5 V
认证状态
Not Qualified
筛选级别
38535Q/M;38534H;883B
最大待机电流
0.07 A
最大压摆率
0.07 mA
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
MILITARY
端子面层
Tin/Lead (Sn85Pb15)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
Base Number Matches
1
文档预览
CMOS PARALLEL
64 x 5-BIT FIFO
WITH FLAGS
Integrated Device Technology, Inc.
IDT72413
FEATURES:
• First-ln/First-Out Dual-Port memory—45MHz
• 64 x 5 organization
• Low-power consumption
— Active: 200mW (typical)
• RAM-based internal structure allows for fast fall-through
time
• Asynchronous and simultaneous read and write
• Expandable by bit width
• Cascadable by word depth
• Half-Full and Almost-Full/Empty status flags
• IDT72413 is pin and functionally compatible with the
MMI67413
• High-speed data communications applications
• Bidirectional and rate buffer applications
• High-performance CMOS technology
• Available in plastic DIP, CERDIP and SOIC
• Military product compliant to MIL-STD-883, Class B
• Industrial temperature range (-40
o
C to +85
o
C) is avail-
able, tested to military electrical specifications
DESCRIPTION:
The IDT72413 is a 64 x 5, high-speed First-In/First-Out
(FIFO) that loads and empties data on a first-in-first-out basis.
It is expandable in bit width. All speed versions are cascad-
able in depth.
The FIFO has a Half-Full Flag, which signals when it has 32
or more words in memory. The Almost-Full/Empty Flag is
active when there are 56 or more words in memory or when
there are 8 or less words in memory.
The IDT72413 is pin and functionally compatible to the
MMI67413. It operates at a shift rate of 45MHz. This makes it
ideal for use in high-speed data buffering applications. The
IDT72413 can be used as a rate buffer, between two digital
systems of varying data rates, in high-speed tape drivers, hard
disk controllers, data communications controllers and
graphics controllers.
The IDT72413 is fabricated using IDTs high-performance
CMOS process. This process maintains the speed and high
output drive capability of TTL circuits in low-power CMOS.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B.
FUNCTIONAL BLOCK DIAGRAM
OUPUT ENABLE
(OE)
DATA
IN
(D
0-4
)
(MR)
MASTER
RESET
INPUT
READY
SHIFT
IN
(IR)
FIFO
INPUT
STAGE
64 x 5
MEMORY
ARRAY
FIFO
OUTPUT
STAGE
DATA
OUT
(Q
0-4
)
(SO)
INPUT
CONTROL
LOGIC
REGISTER
CONTROL
LOGIC
OUTPUT
CONTROL
LOGIC
(OR)
SHIFT
OUT
OUPUT
READY
(SI)
FLAG
CONTROL
LOGIC
HALF-FULL (HF)
ALMOST-FULL/
EMPTY (AF/E)
2748 drw 01
The IDT logo is a registered trademark of Integrated Device Technology,Inc.
FAST is a trademark of National Semiconductor, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996
Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
DECEMBER 1996
DSC-2748/7
5.02
1
IDT72413
CMOS PARALLEL 64 x 5-BIT FIFO WITH FLAGS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
OE
HF
IR
SI
D
0
D
1
D
2
D
3
D
4
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Vcc
AF/E
SO
OR
Q
0
Q
1
Q
2
Q
3
Q
4
MR
2748 drw 02
Rating
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
-0.5 to +7.0
Military
-0.5 to +7.0
Unit
V
V
TERM
P20-1,
C20-1,
&
SO20-2
17
16
15
14
13
12
11
T
A
T
BIAS
T
STG
I
OUT
0 to +70
-55 to +125
-55 to +125
50
-55 to +125
-65 to +135
-65 to +150
50
°C
°C
°C
mA
DIP/SOIC
TOP VIEW
NOTE:
2748 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
5
7
Unit
pF
pF
2748 tbl 02
NOTE:
1. This parameter is sampled and not 100% tested.
2. Characterized values, not currently listed.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
CC
GND
V
IH
V
IL(1)
Parameter
Military Supply
Voltage
Commercial Supply
Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
4.5
0
2.0
Typ.
5.0
5.0
0
Max. Unit
5.5
5.5
0
0.8
V
V
V
V
V
2748 tbl 03
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
5.02
2
IDT72413
CMOS PARALLEL 64 x 5-BIT FIFO WITH FLAGS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0°C to +70°C; Military: V
CC
= 5.0V
±
10%, T
A
= –55°C to +125°C)
Symbol
I
IL
I
IH
V
OL
Parameter
Low-Level Input Current
High-Level Input Current
Low-Level Output Current
Test Conditions
V
CC
= Max., GND
V
I
V
CC
V
CC
= Max., GND
V
I
V
CC
V
CC
= Min. I
OL
(Q
0-4
) Mil.
I
OL
(IR, OR)
(1)
I
OL
(HF, AF/E)
V
OH
High-Level Output Current
V
CC
= Min. I
OH
(Q
0-4
)
I
OH
(IR, OR)
I
OH
(HF, AF/E)
I
OS(2)
I
HZ
I
LZ
I
CC(3)
Supply Current
Output Short-Circuit Current
Off-State Output Current
V
CC
= Max. V
O
= 0V
V
CC
= Max. V
O
= 2.4V
V
CC
= Max. V
O
= 0.4V
V
CC
= Max., OE=HIGH Mil.
Inputs LOW, f=25MHz Com'l.
12mA
8mA
8mA
–4mA
–4mA
–4mA
-20
-20
-110
20
70
60
mA
mA
µA
2.4
V
Com'l. 24mA
Min.
-10
Max.
10
0.4
Unit
µA
µA
V
NOTES:
2748 tbl 04
1. Care should be taken to minimize as much as possible the DC and capactive load on IR and OR when operating at frequencies above 25mHz.
2. Not more than one output should be shorted at a time and duration of the short circuit should not exceed one second. Guaranteed by design, but not
currently tested.
3. For frequencies greater than 25MHz, I
CC
= 60mA + (1.5mA x [f - 25MHz]) commercial and I
CC
= 70mA + (1.5mA x [f - 25MHz]) military.
OPERATING CONDITIONS
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0°C to +70°C; Military: V
CC
= 5.0V
±
10%, T
A
= –55°C to +125°C)
Commercial
Military & Commercial
Military & Commercial
Symbol
t
SIH
t
SIL
t
IDS
t
IDH
t
SOH
t
SOL
t
MRW
t
MRS
(1)
(1)
(1)
Parameters
Shift in HIGH Time
Shift in LOW TIme
Input Data Set-up
Input Data Hold Time
Shift Out HIGH Time
Shift Out LOW Time
Master Reset Pulse
Master Reset Pulse to SI
Figure
2
2
2
2
5
5
8
8
IDT72413L45
Min.
Max.
9
11
0
13
9
11
20
20
IDT72413L35
Min.
Max.
9
17
0
15
9
17
30
35
IDT72413L25
Min.
Max.
16
20
0
25
16
20
35
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
NOTE:
2748 tbl 05
1. Since the FIFO is a very high-speed device, care must be excercised in the design of the hardware and timing utilized within the design. Device grounding
and decoupling are crucial to correct operation as the FIFO will respond to very small glitches due to long reflective lines, high capacitances and/or poor
supply decoupling and grounding. A monolithic ceramic capacitor of 0.1µF directly between VCC and GND with very short lead length is recommended.
5.02
3
IDT72413
CMOS PARALLEL 64 x 5-BIT FIFO WITH FLAGS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0°C to +70°C; Military: V
CC
= 5.0V
±
10%, T
A
= –55°C to +125°C)
Commercial
Symbol
f
IN
t
IRL
(1)
Mil. & Com'l
IDT72413L35
Min.
Max.
5
5
5
35
18
20
35
18
20
20
28
28
28
28
25
28
28
5
28
28
28
28
28
28
12
12
15
15
Mil. & Com'l
IDT72413L25
Min.
Max.
5
5
5
25
28
25
25
28
25
20
40
30
30
30
35
40
40
7
40
40
40
40
40
40
15
15
20
20
ns
Unit
MHz
ns
ns
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameters
Shift In Rate
Shift In
to Input Ready LOW
Shift In
to Input Ready HIGH
Shift Out Rate
Shift Out
to Output Ready LOW
Shift Out
to Output Ready HIGH
Output Data Hold Previous Word
Output Data Shift Next Word
Data Throughput or "Fall-Through"
Master Reset
to Output Ready LOW
Master Reset
to Input Ready HIGH
Master Reset
to Input Ready LOW
Master Reset
to Outputs LOW
Master Reset
to Half-Full Flag
Master Reset
to AF/E Flag
Input Ready Pulse HIGH
Ouput Ready Pulse HIGH
Output Ready
HIGH to Valid Data
Shift Out
to AF/E HIGH
Shift In
to AF/E
Shift Out
to AF/E LOW
Shift In
to AF/E HIGH
Shift In
to HF HIGH
Shif Out
to HF LOW
Output Disable Delay
Figure
2
2
2
5
5
5
5
5
4, 7
8
8
8
8
8
8
4
7
5
9
9
10
10
11
11
12
12
IDT72413L45
Min.
Max.
5
5
5
45
18
18
45
18
19
19
25
25
25
25
20
25
25
5
28
28
28
28
28
28
12
12
15
15
t
IRH(1)
f
OUT
t
ORL(1)
t
ORH(1)
t
ODH(1)
t
ODS
t
PT
t
MRORL
t
MRIRH
(3)
t
MRIRL(2)
t
MRQ
t
MRHF
t
MRAFE
t
IPH(3)
t
OPH(3)
t
ORD(3)
t
AEH
t
AEL
t
AFL
t
AFH
t
HFH
t
HFL
t
PHZ(3)
t
PLZ(3)
t
PLZ(3)
t
PHZ(3)
Output Enable Delay
12
12
NOTES:
2748 tbl 06
1. Since the FIFO is a very high-speed device, care must be taken in the design of the hardware and the timing utilized within the design. Device grounding
and decoupling are crucial to correct operation as the FIFO will respond to very small glitches due to long reflective lines, high capacitances and/or poor
supply decoupling and grounding. A monolithic ceramic capacitor of 0.1µF directly between VCC and GND with very short lead length is recommended.
2. If the FIFO is full, (IR = HIGH), MR
forces IR to go LOW, and MR
causes IR to go HIGH.
3. Guaranteed by design but not currently tested.
5.02
4
IDT72413
CMOS PARALLEL 64 x 5-BIT FIFO WITH FLAGS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figure 1
2748 tbl 07
STANDARD TEST LOAD
5V
R1
OUTPUT
R2
TEST POINT
30pF*
DESIGN TEST LOAD
5V
2KΩ
30pF*
or equivalent
circuit
*Including scope and jig
2748 drw 03
RESISTOR VALUES FOR
STANDARD TEST LOAD
I
OL
24mA
12mA
8mA
R1
200Ω
390Ω
600Ω
Figure 1. Output Load
R2
300Ω
760Ω
1200Ω
2748 tbl 08
FUNCTIONAL DESCRIPTION:
The IDT72413, 65 x 5 FIFO is designed using a dual-port
RAM architecture as opposed to the traditional shift register
approach. This FIFO architecture has a write pointer, a read
pointer and control logic, which allow simultaneous read and
write operations. The write pointer is incremented by the
falling edge of the Shift In (Sl) control; the read pointer is
incremented by the falling edge of the Shift Out (SO). The
Input Ready (IR) signals when the FIFO has an available
memory location; Output Ready (OR) signals when there is
valid data on the output. Output Enable (OE) provides the
capability of three-stating the FIFO outputs.
DATA OUTPUT
Data is shifted out on the HIGH-to-LOW transition of Shift
Out (SO). This causes the internal read pointer to be ad-
vanced to the next word location. If data is present, valid data
will appear on the outputs and Output Ready (OR) will go
HIGH. If data is not present, Output Ready will stay LOW
indicating the FIFO is empty. The last valid word read from the
FIFO will remain at the FlFOs output when it is empty. When
the FIFO is not empty Output Ready (OR) goes LOW on the
LOW-to-HlGH transition of Shift Out.
FALL-THROUGH MODE
The FIFO operates in a Fall-Through Mode when data gets
shifted into an empty FIFO. After the fall-through delay the
data propagates to the output. When the data reaches the
output, the Output Ready (OR) goes HIGH.
A Fall-Through Mode also occurs when the FIFO is
completely full. When data is shifted out of the full FIFO a
location is available for new data. After a fall-through delay,
the lnput Ready goes HlGH. If Shift In is HIGH, the new data
can be written to the FIFO. The fall-through delay of a RAM-
based FIFO (one clock cycle) is far less than the delay of a
Shift register-based FIFO.
FIFO RESET
The FIFO must be reset upon power up using the Master
Reset (MR) signal. This causes the FIFO to enter an empty
state signified by Output Ready (OR) being LOW and Input
Ready (IR) being HIGH. In this state, the data outputs (Q
0-4
)
will be LOW.
DATA INPUT
Data is shifted in on the LOW-to-HIGH transition of Shift In
(Sl). This loads input data into the first word location of the
FIFO and causes the lnput Ready to go LOW. On the HlGH-
to-LOW transition of Shift In, the write pointer is moved to the
next word position and Input Ready (lR) goes HlGH indicating
the readiness to accept new data. If the FIFO is full, Input
Ready will remain LOW until a word of data is shifted out.
5.02
5
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参数对比
与IDT72413L25PB相近的元器件有:IDT72413L45SO、IDT72413L25SOB、IDT72413L35SO、IDT72413L35DB、IDT72413L45DB、IDT72413L25D。描述及对比如下:
型号 IDT72413L25PB IDT72413L45SO IDT72413L25SOB IDT72413L35SO IDT72413L35DB IDT72413L45DB IDT72413L25D
描述 Bi-Directional FIFO, 64X5, Asynchronous, CMOS, PDIP20 FIFO, 64X5, 19ns, Asynchronous, CMOS, PDSO20, 0.300 INCH, SOIC-20 Bi-Directional FIFO, 64X5, Asynchronous, CMOS, PDSO20 FIFO, 64X5, 20ns, Asynchronous, CMOS, PDSO20, 0.300 INCH, SOIC-20 FIFO, 64X5, 20ns, Asynchronous, CMOS, CDIP20, 0.300 INCH, CERDIP-20 FIFO, 64X5, 45ns, Asynchronous, CMOS, CDIP20 FIFO, 64X5, 20ns, Asynchronous, CMOS, CDIP20, 0.300 INCH, CERDIP-20
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code unknown _compli not_compliant not_compliant not_compliant unknown not_compliant
JESD-30 代码 R-PDIP-T20 R-PDSO-G20 R-PDSO-G20 R-PDSO-G20 R-GDIP-T20 R-XDIP-T20 R-GDIP-T20
JESD-609代码 e0 e0 e0 e0 e0 e0 e0
内存集成电路类型 BI-DIRECTIONAL FIFO OTHER FIFO BI-DIRECTIONAL FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO
内存宽度 5 5 5 5 5 5 5
端子数量 20 20 20 20 20 20 20
字数 64 words 64 words 64 words 64 words 64 words 64 words 64 words
字数代码 64 64 64 64 64 64 64
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 70 °C 125 °C 70 °C 125 °C 125 °C 70 °C
最低工作温度 -55 °C - -55 °C - -55 °C -55 °C -
组织 64X5 64X5 64X5 64X5 64X5 64X5 64X5
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, GLASS-SEALED CERAMIC CERAMIC, GLASS-SEALED
封装代码 DIP SOP SOP SOP DIP DIP DIP
封装等效代码 DIP20,.3 SOP20,.4 SOP20,.4 SOP20,.4 DIP20,.3 DIP20,.3 DIP20,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE IN-LINE
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.07 A 0.00009 A 0.07 A 0.000075 A 0.000085 A 0.0001 A 0.00006 A
最大压摆率 0.07 mA 0.09 mA 0.07 mA 0.075 mA 0.085 mA 0.1 mA 0.06 mA
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO YES YES YES NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY COMMERCIAL MILITARY COMMERCIAL MILITARY MILITARY COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子节距 2.54 mm 1.27 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
厂商名称 IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
筛选级别 38535Q/M;38534H;883B - 38535Q/M;38534H;883B - 38535Q/M;38534H;883B 38535Q/M;38534H;883B -
零件包装代码 - SOIC - SOIC DIP - DIP
包装说明 - 0.300 INCH, SOIC-20 - 0.300 INCH, SOIC-20 0.300 INCH, CERDIP-20 - 0.300 INCH, CERDIP-20
针数 - 20 - 20 20 - 20
ECCN代码 - EAR99 - EAR99 EAR99 - EAR99
最长访问时间 - 19 ns - 20 ns 20 ns 45 ns 20 ns
其他特性 - FALL THRU 25NS - FALL THRU 28NS FALL THRU 28NS - FALL THRU 40NS
周期时间 - 22.22 ns - 28.57 ns 28.57 ns - 40 ns
长度 - 12.8 mm - 12.8 mm 25.3365 mm - 25.3365 mm
内存密度 - 320 bi - 320 bit 320 bit - 320 bit
功能数量 - 1 - 1 1 - 1
输出特性 - 3-STATE - 3-STATE 3-STATE - 3-STATE
可输出 - YES - YES YES - YES
并行/串行 - PARALLEL - PARALLEL PARALLEL - PARALLEL
峰值回流温度(摄氏度) - 225 - 225 225 - 225
座面最大高度 - 2.65 mm - 2.65 mm 5.08 mm - 5.08 mm
最大供电电压 (Vsup) - 5.5 V - 5.5 V 5.5 V - 5.5 V
最小供电电压 (Vsup) - 4.5 V - 4.5 V 4.5 V - 4.5 V
处于峰值回流温度下的最长时间 - 30 - 30 20 - 20
宽度 - 7.5 mm - 7.5 mm 7.62 mm - 7.62 mm
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