型号
- 型号
- 关键词
| 型号 | IDT7M207S120CB | IDT7M207S85CB | IDT7M207S120C | IDT7M207S85C |
|---|---|---|---|---|
| 描述 | FIFO, 32KX9, 120ns, Asynchronous, CMOS | FIFO, 32KX9, 85ns, Asynchronous, CMOS | FIFO, 32KX9, 120ns, Asynchronous, CMOS | FIFO, 32KX9, 85ns, Asynchronous, CMOS |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 120 ns | 85 ns | 120 ns | 85 ns |
| 最大时钟频率 (fCLK) | 7.1 MHz | 9.5 MHz | 7.1 MHz | 9.5 MHz |
| 周期时间 | 140 ns | 105 ns | 140 ns | 105 ns |
| JESD-30 代码 | R-XDMA-T28 | R-XDMA-T28 | R-XDMA-T28 | R-XDMA-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 内存密度 | 294912 bit | 294912 bit | 294912 bit | 294912 bit |
| 内存集成电路类型 | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
| 内存宽度 | 9 | 9 | 9 | 9 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 70 °C | 70 °C |
| 组织 | 32KX9 | 32KX9 | 32KX9 | 32KX9 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | NO | NO | NO | NO |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.048 A | 0.048 A | 0.032 A | 0.032 A |
| 最大压摆率 | 0.72 mA | 0.72 mA | 0.6 mA | 0.6 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
