PIMZ1AS-AU
Complementary Dual General Purpose Transistor
Voltage
Features
50V /
-50V
Current
0.15 /
-0.15A
SOT-23 6L
Unit: inch(mm)
Silicon PNP/NPN epitaxial type
Tr1: PNP
Tr2: NPN
Ideal for Low Power Amplification and Switching
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: SOT-23 6L Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: 1AS
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Operating Junction and Storage Temperature Range
Typical Thermal Resistance from Junction to Ambient
(Note )
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
STG
R
θJA
Tr1
Tr2
UNITS
50
60
7
150
300
-55~150
100
-50
-60
-6
-150
mA
mW
o
o
V
C
C/W
Note: Mounted on FR4 with 2oz. PCB at 1 inch square copper pad.
March 18,2019-REV.00
Page 1
PIMZ1AS-AU
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Tr1 (PNP)
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON characteristics
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
h
FE
V
CE(SAT)
f
T
V
CE
= -6V I
C
= -1mA
I
C
= -50mA, I
B
= -5mA
I
E
= -2mA, V
CE
= -12V
f=100MHz
V
CB
= -12V I
E
= 0A,
f=100MHz
120
-
-
-
-150
140
560
-500
-
-
mV
MHz
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
I
C
= -1mA, I
B
= 0A
I
C
= -50uA, I
E
= 0A
I
E
= -50uA, I
C
= 0A
V
CB
= -60V, I
E
= 0A
V
EB
= -6V
-50
-60
-6
-
-
-
-
-
-
-
-
-
-
-100
nA
-100
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
Collector Output Capacitance
C
OB
-
4
5
pF
Tr2 (NPN)
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON characteristics
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
h
FE
V
CE(SAT)
f
T
V
CE
= 6V I
C
= 1mA
I
C
= 50mA, I
B
= 5mA
I
E
= 2mA, V
CE
= 12V
f=100MHz
V
CB
= 12V I
E
= 0A,
f=100MHz
120
-
-
-
100
180
560
400
-
-
mV
MHz
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
I
C
= 1mA, I
B
= 0A
I
C
= 50uA, I
E
= 0A
I
E
= 50uA, I
C
= 0A
V
CB
= 60V, I
E
= 0A
V
EB
= 7V
50
60
7
-
-
-
-
-
-
-
-
-
-
100
nA
100
V
Collector Output Capacitance
Note: 1. Pulse width<300us, Duty cycle<2%
C
OB
-
2
3.5
pF
March 18,2019-REV.00
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PIMZ1AS-AU
TYPICAL CHARACTERISTIC CURVES
Tr1 (PNP)
Fig.1 DC Current Gain
Fig.2 Collector Current
Fig.3 Collector-Emitter Saturation Voltage
Fig.4 Base-Emitter Saturation Voltage
Fig.5 Base-Emitter Voltage
March 18,2019-REV.00
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PIMZ1AS-AU
TYPICAL CHARACTERISTIC CURVES
Tr2 (NPN)
Fig.6 DC Current Gain
Fig.7 Collector Current
Fig.8 Collector-Emitter Saturation Voltage
Fig.9 Base-Emitter Saturation Voltage
Fig.10 Base-Emitter Voltage
March 18,2019-REV.00
Page 4
PIMZ1AS-AU
Part No Packing Code Version
Part No Packing Code
IMZ1AS-AU_S1_000A1
Package Type
SOT-23 6L
Packing Type
3K pcs / 7” reel
Marking
1AS
Version
Halogen free
Mounting Pad Layout
March 18,2019-REV.00
Page 5
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