IMZ2A
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
VOLTAGE
FEATURES
• PNP/ NPN epitaxial silicon, planar design
• Collector-emitter voltage V
CE
=50V
• Collector current IC=150mA
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
50 Volt
POWER
300mW
MECHANICAL DATA
• Case : SOT-23 6L plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight : 0.0005 ounces, 0.014 grams
• Marking : Z2A
Tr2
Tr1
Fig.137
ABSOLUTE RATINGS
(T
A
=25°C)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
Tr1
-50
-60
-6
-150
Tr2
50
60
7
150
UNITS
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max. Power Dissipation (Note1)
Thermal Resistance, Junction to Ambient (Note1)
Operating Junction and Storage Temperature Range
SYMBOL
P
TOT
R
ΘJA
T
J
,T
STG
VALUE
300
106
-55 to +150
UNITS
mW
O
C/W
O
C
NOTE :
1. Transistor mounted on FR-4 board 70 x 60 x 1 mm.
May 19,2016REV.03
PAGE . 1
IMZ2A
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
Tr1 (PNP)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
DC Current Gain (Note1)
Collector-Emitter Saturation Voltage
Cutoff Frequency
Output Capacitance
Tr2 (NPN)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
DC Current Gain (Note1)
Collector-Emitter Saturation Voltage
Cutoff Frequency
Output Capacitance
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C ob
TEST CONDITION
I
C
=1mA
I
C
=50
μA
I
E
=50
μA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
I
E
=2mA,V
CE
=12V,
f=100MHz
I
E
=0mA,V
CE
=12V,
f=100MHz
MIN
50
60
7
-
-
120
-
-
-
TYP
-
-
-
-
-
-
-
180
2
MAX
-
-
-
0.1
0.1
560
0.4
-
3.5
UNITS
V
V
V
μA
μA
-
V
MHz
pF
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C ob
TEST CONDITION
I
C
=-1mA
I
C
=-50
μA
I
E
=-50
μA
V
CB
=-60V
V
EB
=-6V
V
CE
=-6V, I
C
=-1mA
I
C
/I
B
=-50mA/-5mA
I
E
=2mA,V
CE
=-12V,
f=100MHz
I
E
=0mA,V
CE
=-12V,
f=100MHz
MIN
-50
-60
-6
-
-
120
-
-
-
TYP
-
-
-
-
-
-
-
140
4
MAX
-
-
-
-0.1
-0.1
5 60
-0.5
-
5
UNITS
V
V
V
μA
μA
-
V
MHz
pF
May 19,2016REV.03
PAGE . 2
IMZ2A
Fig. 1. Collector Saturation Region
Fig. 2. DC Current Gain
`
Fig. 3. V
CE(sat)
versus I
C
Fig. 4. V
BE(sat)
versus I
C
Fig. 5. Base-Emitter Voltage
May 19,2016REV.03
PAGE . 3
IMZ2A
Fig. 1. Collector Saturation Region
Fig. 2. DC Current Gain
`
Fig. 3. V
CE(sat)
versus I
C
Fig. 4. V
BE(sat)
versus I
C
Fig. 5. Base-Emitter Voltage
May 19,2016REV.03
PAGE . 4
IMZ2A
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
May 19,2016-REV.03
PAGE . 5
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