TECHNICAL DATA
IN74HCT126A
Quad 3-State Noninverting Buffers
High-Performance Silicon-Gate CMOS
The IN74HCT126A is identical in pinout to the LS/ALS126. The
IN74HCT126A may be used as a level converter for interfacing TTL
or NMOS outputs to High Speed CMOS inputs.
The IN74HCT126A noninverting buffers are designed to be used
with 3-state memory address drivers, clock drivers, and other bus-
oriented systems. The devices have four separate output enables that
are active-high.
•
TTL/NMOS Compatible Input Levels
•
Outputs Directly Interface to CMOS, NMOS, and TTL
•
Operating Voltage Range: 4.5 to 5.5 V
•
Low Input Current: 1.0
µA
ORDERING INFORMATION
IN74HCT126AN Plastic
IN74HCT126AD SOIC
T
A
= -55° to 125° C for all packages
LOGIC DIAGRAM
PIN ASSIGNMENT
FUNCTION TABLE
Inputs
A
PIN 14 =V
CC
PIN 7 = GND
H
L
X
OE
H
H
L
Output
Y
H
L
Z
X = don’t care
Z = high impedance
128
IN74HCT126A
MAXIMUM RATINGS
*
Symbol
V
CC
V
IN
V
OUT
I
IN
I
OUT
I
CC
P
D
Tstg
T
L
*
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
CC
and GND Pins
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
Value
-0.5 to +7.0
-1.5 to V
CC
+1.5
-0.5 to V
CC
+0.5
±20
±35
±75
750
500
-65 to +150
260
Unit
V
V
V
mA
mA
mA
mW
°C
°C
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
, V
OUT
T
A
t
r
, t
f
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time (Figure 1)
Min
4.5
0
-55
0
Max
5.5
V
CC
+125
500
Unit
V
V
°C
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND≤(V
IN
or V
OUT
)≤V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
129
IN74HCT126A
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Symbol
Parameter
Test Conditions
V
Guaranteed Limit
25
°C
to
-55°C
2.0
2.0
0.8
0.8
4.4
5.4
3.98
0.1
0.1
0.26
±0.1
±0.5
≤85
°C
2.0
2.0
0.8
0.8
4.4
5.4
3.84
0.1
0.1
0.33
±1.0
±5.0
≤125
°C
2.0
2.0
0.8
0.8
4.4
5.4
3.7
0.1
0.1
0.4
±1.0
±10
µA
µA
V
Unit
V
IH
V
IL
V
OH
Minimum High-Level
Input Voltage
Maximum Low -
Level Input Voltage
Minimum High-Level
Output Voltage
V
OUT
= V
CC
-0.1 V
I
OUT
≤
20
µA
V
OUT
=0.1 V
I
OUT
≤
20
µA
V
IN
=V
IH
I
OUT
≤
20
µA
V
IN
=V
IH
I
OUT
≤
6.0 mA
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
4.5
5.5
5.5
V
V
V
V
OL
Maximum Low-Level
Output Voltage
V
IN
=V
IL
I
OUT
≤
20
µA
V
IN
=V
IL
I
OUT
≤
6.0 mA
I
IN
I
OZ
Maximum Input
Leakage Current
Maximum Three-
State Leakage
Current
Maximum Quiescent
Supply Current
(per Package)
Additional Quiescent
Supply Current
V
IN
=V
CC
or GND
Output in High-Impedance
State
V
IN
=V
IL
or V
IH
V
OUT
=V
CC
or GND
V
IN
=V
CC
or GND
I
OUT
=0µA
V
IN
= 2.4 V, Any One Input
V
IN
=V
CC
or GND, Other
Inputs
I
OUT
=0µA
I
CC
5.5
8.0
80
160
µA
∆I
CC
≥-55°C
25°C to
125°C
2.4
mA
5.5
2.9
130
IN74HCT126A
AC ELECTRICAL CHARACTERISTICS
(V
CC
=5.0 V
±
10%, C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Guaranteed Limit
Symbol
Parameter
25
°C
to
-55°C
23
32
22
12
10
15
≤85°C
≤125°C
Unit
t
PLH
, t
PHL
t
PLZ
, t
PHZ
t
PZL
, t
PZH
t
TLH
, t
THL
C
IN
C
OUT
Maximum Propagation Delay, Input A to
Output Y (Figures 1 and 3)
Maximum Propagation Delay, Output Enable toY
(Figures 2 and 4)
Maximum Propagation Delay, Output Enable toY
(Figures 2 and 4)
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
Maximum Input Capacitance
Maximum Three-State Output Capacitance
(Output in High-Impedance State)
Power Dissipation Capacitance (Per Buffer)
30
38
28
15
10
15
35
48
34
18
10
15
ns
ns
ns
ns
pF
pF
Typical @25°C,V
CC
=5.0 V
55
pF
C
PD
Used to determine the no-load dynamic power
consumption:
P
D
=C
PD
V
CC2
f+I
CC
V
CC
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
131
IN74HCT126A
Figure 3. Test Circuit
Figure 4. Test Circuit
EXPANDED LOGIC DIAGRAM
(1/4 of the Device)
132
