IPC100N04S4-02
OptiMOS
TM
-T2 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
40
2.4
100
V
m
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
PG-TDSON-8-23
1
1
Type
IPC100N04S4-02
Package
PG-TDSON-8-23
Marking
4N0402
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
T
C
=25°C,
T
J
=175°C,
V
GS
=10V
T
C
=100 °C,
T
J
=175°C,
V
GS
=10 V
Pulsed drain current
2)
Avalanche energy, single pulse4)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=50 A
-
-
T
C
=25 °C,
T
J
=175°C
-
Value
Unit
Continuous drain current
I
D
100
1)
A
89
1, 2)
400
315
100
+/-20
150
-55 ... +175
3)
mJ
A
V
W
°C
Rev. 1.0
page 1
2015-05-22
IPC100N04S4-02
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
-
1
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
= 80µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=18 V,
V
GS
=0 V,
T
j
=85 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
= 50A
40
2.0
-
-
3.0
0.01
-
4.0
1
µA
V
-
-
-
1
-
2.2
20
100
2.4
nA
m
Rev. 1.0
page 2
2015-05-22
IPC100N04S4-02
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=100 A,
R
G
=3.5
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
6210
1400
50
20
9
23
19
8100
1830
115
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
34
11
79
5.5
44
26
105
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=20 V,
I
F
=50A,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.9
50
55
100
400
1.3
-
-
A
V
ns
nC
Current is limited by package; with an
R
thJC
= 1K/W the chip is able to carry 191A at 25°C.
Defined by design. Not subject to production test.
T
J
> 150°C is limited to 200h operation time over life time of the device
2)
3)
Rev. 1.0
page 3
2015-05-22
IPC100N04S4-02
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
= 10 V
175
120
150
100
125
80
P
tot
[W]
100
I
D
[A]
75
50
25
0
0
50
100
150
200
60
40
20
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10 µs
10
0
100 µs
100
150 µs
0.5
Z
thJC
[K/W]
I
D
[A]
10
-1
0.1
0.05
10
10
-2
0.01
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2015-05-22
IPC100N04S4-02
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
400
10 V
7V
6 Typ. drain-source on-state resistance
R
DS(on)
= (I
D
);
T
j
= 25 °C
parameter:
V
GS
14
12
5V
300
6.5 V
10
R
DS(on)
[m]
8
I
D
[A]
200
6V
6
5.5 V
4
100
5.5 V
6V
6.5 V
7V
10 V
2
5V
0
0
1
2
3
4
0
0
25
50
75
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
400
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 50 A;
V
GS
= 10 V
4
350
3.5
300
200
R
DS(on)
[m]
250
3
I
D
[A]
150
2.5
100
2
50
175 °C
25 °C
-55 °C
0
3
4
5
6
7
1.5
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2015-05-22
