IPD30N12S3L-31
OptiMOS
®
-T Power-Transistor
Product Summary
V
DS
R
DS(on),max
I
D
120
31
30
V
mW
A
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
PG-TO252-3-11
Type
IPD30N12S3L-31
Package
PG-TO252-3-11
Marking
3N12L31
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=100°C,
V
GS
=10V
1)
Pulsed drain current
1)
Avalanche energy, single pulse
1)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=15A
-
-
T
C
=25°C
-
Value
30
20
120
138
30
±20
57
-55 ... +175
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2016-06-20
IPD30N12S3L-31
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
1)
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
-
minimal footprint
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=29µA
V
DS
=120V,
V
GS
=0V,
T
j
=25°C
V
DS
=120V,
V
GS
=0V,
T
j
=125°C
1)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
V
GS
=4.5V,
I
D
=30A
V
GS
=10 V,
I
D
=30 A
120
1.2
-
-
1.7
0.01
-
2.4
0.1
µA
V
-
-
-
-
-
-
2.6
62
40
K/W
-
-
-
-
1
-
32
26
10
100
42
31
nA
mW
Rev. 1.0
page 2
2016-06-20
IPD30N12S3L-31
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
1)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
1)
Diode pulse current
1)
Diode forward voltage
I
S
I
S,pulse
V
SD
V
GS
=0V,
I
F
=30A,
T
j
=25°C
V
R
=60V,
I
F
=I
S
,
di
F
/dt =100A/µs
-
T
C
=25°C
-
0.6
-
1
120
1.2
V
-
30
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=96V,
I
D
=30A,
V
GS
=0 to 10V
-
-
-
-
5
4
24
3.7
7
6
31
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V,
V
GS
=10V,
I
D
=30A,
R
G
=3.5W
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
1520
380
45
6
4
18
3
1976
494
68
-
-
-
-
ns
pF
Reverse recovery time
1)
t
rr
-
72
-
ns
Reverse recovery charge
1)
Q
rr
-
150
-
nC
1)
2)
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2016-06-20
IPD30N12S3L-31
1 Power dissipation
P
tot
= f(T
C
);
V
GS
= 10 V
2 Drain current
I
D
= f(T
C
);
V
GS
= 10 V
60
50
30
40
P
tot
[W]
20
30
20
10
10
0
0
50
100
150
200
I
D
[A]
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
0.5
10
0
1 µs
100
10 µs
0.1
Z
thJC
[K/W]
I
D
[A]
0.05
10
-1
0.01
100 µs
10
single pulse
1 ms
10
-2
1
0.1
1
10
100
1000
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2016-06-20
IPD30N12S3L-31
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
120
10 V
5V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
80
3V
70
3.5 V
80
4.5 V
60
4V
R
DS(on)
[mΩ]
4V
I
D
[A]
50
40
40
4.5 V
3.5 V
30
5V
10 V
3V
0
0
2
4
6
20
0
20
40
60
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
60
25 °C
-55 °C
175 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 30 A;
V
GS
= 10 V
60
50
40
R
DS(on)
[mW]
20
0
1
2
3
4
5
40
I
D
[A]
30
20
10
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2016-06-20
