IP Semiconductor Co., Ltd.
High current density due to double mesa technology; SIPOS
and Glass Passivation. IPT1208-xx series are suitable for
general purpose AC Switching. They can be used as an
ON/OFF function In application such as static relays,
heating regulation, Induction motor stating circuits… or
for phase Control operation light dimmers, motor speed
Controllers.
The IPT1208-xxF(Insulated version) series are isolated
internally, they provided a 2500V RMS isolation voltage from
all three terminals to external heatsink..
IPT1208-xxF
TO-220F
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/ V
RRM
V
TM
Value
12
800
≤ 1.55
Unit
A
V
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
RMS on–state current
(Full sine wave)
Tj = 25℃
Tj = 25℃
Tc = 79
℃
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
Symbol
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I²t
dI / dt
I
GM
P
G(AV)
Value
-40 to +150
-40 to +125
800
800
900
900
12
126
120
78
50
4
1
Unit
℃
V
V
A
A
A²s
A/us
A
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t
p = 10ms
Critical Rate of rise of on-state current
I
G
= 2xI
GT
,
t
r ≤ 100ns, f = 120Hz, Tj = 125
℃
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125
℃
Tj = 125
℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPT1208-xxF
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
IPT1208-xxF
TE
I
GT
V
D
= 12V R
L
= 30Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT
II
I
H
dV/dt
I
T =
100mA
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
MIN
MAX
MIN
I – II – III
I – II – III
I – II – III
I – III
I
L
MAX
15
10
20
3.5
1.0
-
30
15
40
6.5
2.9
-
60
35
500
-
-
6.5
80
50
1000
-
-
12
A/ms
mA
V/us
MAX
MAX
MIN
10
25
5
SE
10
1.3
0.2
50
70
mA
CE
35
BE
50
mA
V
V
Symbol
Test Condition
Quadrant
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 17A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 125
℃
Tj = 125
℃
Tj = 125
℃
Value(MAX)
1.55
5
1
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case(AC)
Value
3.3
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPT1208-xxF
PACKAGE MECHANICAL DATA
TO-220F
Dimensions
Ref
Millimeters
Min
A
B
C
C2
C3
D
E
G
H
L1
L2
V1
3.46
40º
4.3
0.74
0.5
2.4
2.5
8.6
9.7
5.0
28.0
3.63
3.63
0.136
40º
0.8
Inches
Min
0.169
0.029
0.020
0.094
0.098
0.338
0.382
0.197
11.0
0.143
0.143
0.031
Typ
Max
4.7
0.83
0.75
2.7
2.9
9.2
10.3
5.2
29.8
Typ
Max
0.185
0.033
0.030
0.106
0.114
0.362
0.406
0.205
11.7
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPT1208-xxF
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
