IP Semiconductor Co., Ltd.
High current density due to double mesa technology; SIPOS
and Glass Passivation. IPT12Q08-xx series are suitable for
general purpose AC Switching. They can be used as an
ON/OFF function In application such as static relays,
heating regulation, Induction motor stating circuits… or
for phase Control operation light dimmers, motor speed
Controllers.
The IPT12Q08-xxF(Insulated version) series are isolated
internally, they provided a 2500V RMS isolation voltage from
all three terminals to external heatsink..
IPT12Q08-xxF
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/ V
RRM
V
TM
Value
12
800
≤ 1.55
Unit
A
V
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
RMS on–state current
(Full sine wave)
Tj = 25℃
Tj = 25℃
Tc = 79
℃
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
Symbol
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I²t
dI / dt
I
GM
P
G(AV)
Value
-40 to +150
-40 to +125
800
800
900
900
12
126
120
78
50
4
1
Unit
℃
V
V
A
A
A²s
A/us
A
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t
p = 10ms
Critical Rate of rise of on-state current
I
G
= 2xI
GT
,
t
r ≤ 100ns, f = 120Hz, Tj = 125
℃
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125
℃
Tj = 125
℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPT12Q08-xxF
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
IPT12Q08-xx F
CE
I
GT
V
D
= 12V R
L
= 30Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT
II
I
H
dV/dt
I
T =
100mA
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
MIN
MAX
MIN
I – II – III
IV
ALL
ALL
I – III – IV
I
L
MAX
80
25
200
-
-
-
100
50
400
-
-
-
A/ms
mA
V/us
MAX
MAX
MIN
40
25
50
1.3
0.2
50
mA
BE
50
100
mA
V
V
Symbol
Test Condition
Quadrant
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 17A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 125
℃
Tj = 125
℃
Tj = 125
℃
Value(MAX)
1.55
5
1
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case(AC)
Value
3.3
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPT12Q08-xxF
PACKAGE MECHANICAL DATA
TO-220F
Dimensions
Ref
Millimeters
Min
A
B
C
C2
C3
D
E
F
G
H
L1
L2
L3
V1
1.14
3.3
40º
4.4
0.74
0.5
2.4
2.6
8.8
9.7
6.4
5
28.0
3.63
1.7
0.044
0.130
40º
0.8
Inches
Min
0.173
0.029
0.020
0.094
0.102
0.346
0.382
0.252
0.197
11.0
0.143
0.067
0.031
Typ
Max
4.8
0.83
0.75
2.7
3
9.3
10.3
6.8
5.2
29.8
Typ
Max
0.189
0.033
0.030
0.106
0.118
0.367
0.406
0.268
0.205
11.7
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com
3
IPT12Q08-xxF
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
嵌入式系统
