IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT2506-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT2506-xx series is 3 Quadrants triacs, This is specially
recommended for use on inductive Loads.
The IPT2506-xxH (Insulated version) series are isolated
internally they provides a 2500V RMS isolation voltage
from all three terminals to external heatsink.
IPT2506-xxH
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/ V
RRM
V
TM
Value
25
600
≤ 1.55
Unit
A
V
V
TO3P
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
RMS on–state current
(360º conduction angle )
Tj = 25℃
Tj = 25℃
Tc = 100℃
t = 8.3ms
t = 10ms
Symbol
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I²t
dI / dt
I
GM
P
G(AV)
Value
-40 to +150
-40 to +125
600
600
700
700
25
260
250
340
50
4
1
Unit
℃
V
V
A
A
A²s
A/us
A
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t
p = 10ms
Critical Rate of rise of on-state current
I
G
= 2 x I
GT,
tr ≤ 100ns, f = 120Hz, Tj = 125
℃
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125
℃
Tj = 125
℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPT2506-xxH
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
IPT2506-xxH
BE
I
GT
V
GT
V
GD
V
D
= 12V R
L
= 33Ω
Tj = 25
℃
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT,
Tj = 125
℃
I
T =
500mA Gate open
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
MIN
I – II – III
I – II – III
I – II – III
I – III
MAX
II
I
H
dV/dt
MAX
MIN
80
50
500
-
-
13
80
50
500
-
-
13
100
75
1000
-
-
22
A/ms
mA
V/us
MAX
MAX
MIN
70
35
CE
35
1.3
0.2
70
80
mA
DE
50
mA
V
V
Symbol
Test Condition
Quadrant
Unit
I
L
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 28A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 25
℃
Tj = 25
℃
Tj = 125
℃
Value (MAX)
1.55
10
3
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
1.1
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPT2506-xxH
PACKAGE MECHANICAL DATA
TO-3P
Millimeters
Min
A
B
C
D
E
F
G
H
J
K
L
M
N
4.4
1.45
14.35
0.5
2.7
15.8
20.4
15.1
5.45
3.15
4.07
1.35
14.6
Typ
Max
4.6
1.55
15.6
0.7
2.9
16.5
21.1
15.5
5.65
3.65
4.17
1.40
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com
3
IPT2506-xxH
IPT2506-xxH
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
