型号
- 型号
- 关键词
| 型号 | IRGS4620DPBF | IRGS4620DTRLPBF | IRGP4620DPBF |
|---|---|---|---|
| 描述 | Precision Amplifiers High VTG RRIO Prec Op Amps E-Trim | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Gate Drivers |
| 产品种类 Product Category |
IGBT Transistors | IGBT Transistors | IGBT Transistors |
| 制造商 Manufacturer |
Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| 封装 / 箱体 Package / Case |
TO-263-3 | TO-263-3 | TO-247AC-3 |
| 安装风格 Mounting Style |
SMD/SMT | SMD/SMT | Through Hole |
| Configuration | Single | Single | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector-Emitter Saturation Voltage | 1.55 V | 1.97 V | 1.97 V |
| Maximum Gate Emitter Voltage | +/- 30 V | +/- 20 V | +/- 20 V |
| Continuous Collector Current at 25 C | 32 A | 32 A | 32 A |
| Pd-功率耗散 Pd - Power Dissipation |
140 W | 140 W | 140 W |
| 最小工作温度 Minimum Operating Temperature |
- 40 C | - 40 C | - 40 C |
| 最大工作温度 Maximum Operating Temperature |
+ 175 C | + 175 C | + 175 C |
| 系列 Packaging |
Tube | Reel | Tube |
| Continuous Collector Current Ic Max | 20 A | 20 A | 20 A |
| Gate-Emitter Leakage Current | +/- 100 nA | 100 nA | 100 nA |
| 高度 Height |
4.57 mm | 4.57 mm | 20.7 mm |
| 长度 Length |
10.31 mm | 10.31 mm | 15.87 mm |
| 工厂包装数量 Factory Pack Quantity |
50 | 800 | 25 |
| 技术 Technology |
Si | Si | Si |
| 宽度 Width |
9.45 mm | 9.45 mm | 5.31 mm |
| 单位重量 Unit Weight |
0.009185 oz | 0.009185 oz | 0.191185 oz |
| RoHS | Details | - | Details |
