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IRKL730-20

Silicon Controlled Rectifier, 675A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, POWER, SUPER MAGN-A-PAK-5

器件类别：模拟混合信号IC    触发装置   

厂商名称：Vishay(威世)

厂商官网：http://www.vishay.com

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Vishay(威世)
包装说明
FLANGE MOUNT, R-XUFM-X5
针数
5
Reach Compliance Code
unknown
外壳连接
ISOLATED
配置
SINGLE WITH BUILT-IN DIODE
最大直流栅极触发电流
200 mA
JESD-30 代码
R-XUFM-X5
元件数量
1
端子数量
5
最高工作温度
130 °C
最低工作温度
-40 °C
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
认证状态
Not Qualified
最大均方根通态电流
675 A
断态重复峰值电压
2000 V
重复峰值反向电压
2000 V
表面贴装
NO
端子形式
UNSPECIFIED
端子位置
UPPER
触发设备类型
SCR
文档预览
Bulletin I27400 rev. A 09/97
IRK.430.. SERIES
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Features
High current capability
3000 V
RMS
isolating voltage with non-toxic substrate
High surge capability
High voltage ratings up to 2000V
Industrial standard package
UL recognition pending
SUPER MAGN-A-pak
TM
Power Modules
430 A
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Wind mill
Major Ratings and Characteristics
Parameters
I
T(AV)
or I
F(AV)
@ T
C
I
T(RMS)
@ T
C
I
TSM
or I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
DRM
/V
RRM
range
T
STG
T
J
range
range
IRK.430..
430
82
675
82
15.7
16.4
1232
1125
12320
1600 to 2000
- 40 to 150
- 40 to 130
Units
A
°C
A
°C
KA
KA
KA
2
s
KA
2
s
KA
2
√s
V
°C
°C
Document Number: 93748
www.vishay.com
1
IRK.430.. Series
Bulletin I27400 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
16
IRK.430..
18
20
1600
1800
2000
V
RSM
, maximum non-
repetitive peak rev. voltage
V
1700
1900
2100
I
RRM
/I
DRM
max.
@ T
J
= T
J
max.
mA
100
On-state Conduction
Parameter
I
T(AV)
I
F(AV)
I
T(RMS)
I
TSM
I
FSM
Maximum average on-state current
@ Case temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IRK.430..
430
82
675
15.7
16.4
13.2
13.8
Units Conditions
A
°C
A
KA
180° conduction, half sine wave @ T
C
= 82°C
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
180° conduction, half sine wave
I
2
t
Maximum I
2
t for fusing
1232
1125
871
795
I
2
√t
Maximum I
2
√t
for fusing
12320
0.96
1.06
0.51
0.45
1.65
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
I
pk
= 1500A, T
J
= 25°C, t
p
= 10ms sine pulse
T
J
= 25°C, anode supply 12V resistive load
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
V
FM
I
H
I
L
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state or forward
voltage drop
Maximum holding current
Typical latching current
500
1000
mA
Switching
Parameter
di/dt
Maximum rate of rise of turned-on
current
t
d
t
Typical delay time
2.0
µs
Gate current 1A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
q
IRK.430..
1000
Units Conditions
A/µs
T
J
= T
J
max., I
TM
= 400A, V
DRM
applied
Typical turn-off time
200
µs
I
TM
= 750A, T
J
= T
J
max, di/dt = -60A/µs,
V
R
= 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
Document Number: 93748
www.vishay.com
2
IRK.430.. Series
Bulletin I27400 rev. A 09/97
Blocking
Parameter
dv/dt
Maximum critical rate of rise of off-state
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
Maximum peak reverse and off-state
leakage current
3000
100
V
mA
t=1s
T
J
= T
J
max., rated V
DRM
/V
RRM
applied
IRK.430..
1000
Units Conditions
V/µs
T
J
= 130°C., linear to V
D
= 80% V
DRM
Triggering
Parameter
P
GM
P
G(AV)
+ I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
IRK.430..
10
2.0
3.0
20
5.0
200
3.0
10
0.25
Units Conditions
W
W
A
V
V
mA
V
mA
V
T
J
= 25°C V
ak
12V
T
J
= 25°C V
ak
12V
T
J
= T
J
max.
T
J
= T
J
max., t
p
< 5ms
T
J
= T
J
max., f = 50Hz, d% = 50
T
J
= T
J
max., t
p
< 5ms
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to
case
R
thC-hs
Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10% SMAP to heatsink
busbar to SMAP
wt
Approximate weight
Case style
6-8
12 - 15
1500
g
See outline table
Nm
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
IRK.430..
- 40 to 130
- 40 to 150
0.065
Units Conditions
°C
K/W
Per junction, DC operation
0.02
K/W
SUPER MAGN-A-pak
Document Number: 93748
www.vishay.com
3
IRK.430.. Series
Bulletin I27400 rev. A 09/97
∆R
thJC
Conduction
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
0.009
0.011
0.014
0.021
0.037
0.006
0.011
0.015
0.022
0.038
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
IRK
1
1
2
3
4
-
-
-
-
Module type
T
2
430
3
-
20
4
Circuit configuration (See Circuit Configurations Table)
Current rating
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
Circuit Configurations Table
IRKT
1
~
IRKH
1
~
IRKL
1
~
+
2
2
+
+
2
3 -
4(K1) 7(K2)
5(G1) 6(G2)
3 -
4(K1)
5(G1)
3 -
7(K2)
6(G2)
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 93748
www.vishay.com
4
IRK.430.. Series
Bulletin I27400 rev. A 09/97
Outline Table
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (°C)
120
110
IRK.430.. Series
R
thJC
(DC) = 0.065 K/W
Maximum Allowable Case Temperature (°C)
130
130
120
110
Conduction Period
IRK.430.. Series
R
thJC
(DC) = 0.065 K/W
Conduction Angle
100
90
30°
80
70
0
100
200
300
400
500
Average On-state Current (A)
60°
90°
120°
180°
100
90
30°
80
70
0
100
200
300
400
500
600
700
Average On-state Current (A)
60°
90°
120°
180°
DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Document Number: 93748
www.vishay.com
5
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参数对比
与IRKL730-20相近的元器件有：IRKH430-18、IRKL730-16、IRKL730-18、IRKL430-20、IRKT730-16、IRKT730-18、IRKT730-20、IRKL430-16。描述及对比如下：
型号 IRKL730-20 IRKH430-18 IRKL730-16 IRKL730-18 IRKL430-20 IRKT730-16 IRKT730-18 IRKT730-20 IRKL430-16
描述 Silicon Controlled Rectifier, 675A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, POWER, SUPER MAGN-A-PAK-5 Silicon Controlled Rectifier, 430000mA I(T), 1800V V(RRM) Silicon Controlled Rectifier, 675A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, POWER, SUPER MAGN-A-PAK-5 Silicon Controlled Rectifier, 675A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, POWER, SUPER MAGN-A-PAK-5 Silicon Controlled Rectifier, 430000mA I(T), 2000V V(RRM) Silicon Controlled Rectifier, 675A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, POWER, SUPER MAGN-A-PAK-7 Silicon Controlled Rectifier, 675A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 2 Element, POWER, SUPER MAGN-A-PAK-7 Silicon Controlled Rectifier, 675A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 2 Element, POWER, SUPER MAGN-A-PAK-7 Silicon Controlled Rectifier, 430000mA I(T), 1600V V(RRM)
包装说明 FLANGE MOUNT, R-XUFM-X5 , FLANGE MOUNT, R-XUFM-X5 FLANGE MOUNT, R-XUFM-X5 , FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7 ,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
最大直流栅极触发电流 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA
最高工作温度 130 °C 130 °C 130 °C 130 °C 130 °C 130 °C 130 °C 130 °C 130 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
重复峰值反向电压 2000 V 1800 V 1600 V 1800 V 2000 V 1600 V 1800 V 2000 V 1600 V
厂商名称 Vishay(威世) - Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
针数 5 - 5 5 - 7 7 7 -
外壳连接 ISOLATED - ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED -
配置 SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS -
JESD-30 代码 R-XUFM-X5 - R-XUFM-X5 R-XUFM-X5 - R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 -
元件数量 1 - 1 1 - 2 2 2 -
端子数量 5 - 5 5 - 7 7 7 -
封装主体材料 UNSPECIFIED - UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED -
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
认证状态 Not Qualified - Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified -
最大均方根通态电流 675 A - 675 A 675 A - 675 A 675 A 675 A -
断态重复峰值电压 2000 V - 1600 V 1800 V - 1600 V 1800 V 2000 V -
表面贴装 NO - NO NO - NO NO NO -
端子形式 UNSPECIFIED - UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED -
端子位置 UPPER - UPPER UPPER - UPPER UPPER UPPER -
触发设备类型 SCR - SCR SCR - SCR SCR SCR -
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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