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IRS21844PBF

MOSFET

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
DIP, DIP14,.3
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
12 weeks
Samacsys Description
HALF-BRIDGE DRIVER
内置保护
TRANSIENT; UNDER VOLTAGE
接口集成电路类型
HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码
R-PDIP-T14
长度
19.305 mm
功能数量
1
端子数量
14
最高工作温度
125 °C
最低工作温度
-40 °C
输出电流流向
SOURCE AND SINK
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP14,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
15 V
认证状态
Not Qualified
座面最大高度
5.33 mm
最大供电电压
20 V
最小供电电压
10 V
标称供电电压
15 V
表面贴装
NO
技术
CMOS
温度等级
AUTOMOTIVE
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
断开时间
0.4 µs
接通时间
0.9 µs
宽度
7.62 mm
文档预览
Data Sheet No. PD60252 revA
IRS2184
/
IRS21844(S)PbF
Features
·
·
·
·
·
·
·
·
·
·
·
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant
Packages
HALF-BRIDGE DRIVER
8-Lead PDIP
IRS2184
14-Lead PDIP
IRS21844
14-Lead SOIC
IRS21844S
8-Lead SOIC
IRS2184S
Description
The IRS2184/IRS21844 are high volt-
age, high speed power MOSFET and
Feature Comparison
Cross-
IGBT drivers with dependent high- and
t
on
/t
off
Input
Deadtime
conduction
Ground Pins
Part
low-side referenced output channels.
logic
prevention
(ns)
(ns)
logic
Proprietary HVIC and latch immune
2181
COM
HIN/LIN
no
none
180/220
CMOS technologies enable ruggedized
21814
V
SS
/COM
monolithic construction. The logic in-
2183
Internal 400
COM
HIN/LIN
yes
180/220
21834
Program 400-5000
V
SS/
COM
put is compatible with standard CMOS
2184
Internal 400
COM
IN/SD
yes
680/270
or LSTTL output, down to 3.3 V logic. The
21844
Program 400-5000
V
SS
/COM
output drivers feature a high pulse cur-
rent buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Typical Connection
V
CC
up to 600 V
V
CC
IN
SD
V
B
HO
V
S
LO
up to 600 V
TO
LOAD
IN
SD
COM
IRS2184
V
CC
IN
SD
V
CC
IN
SD
DT
V
SS
R
DT
V
SS
HO
V
B
V
S
IRS21844
TO
LOAD
(Refer to Lead Assignments for correct
configuration).These diagrams show
electrical connections only. Please refer
to our Application Notes and DesignTips
for proper circuit board layout.
COM
LO
www.irf.com
1
IRS2184/IRS21844(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
DT
V
IN
V
SS
dV
S
/dt
Definition
High-side floating absolute voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side and logic fixed supply voltage
Low-side output voltage
Programmable dead-time pin voltage (IRS21844 only)
Logic input voltage (IN & SD)
Logic ground (IRS21844 only)
Allowable offset supply voltage transient
(8-lead PDIP)
(8-lead SOIC)
(14-lead PDIP)
(14-lead SOIC)
(8-lead PDIP)
(8-lead SOIC)
(14-lead PDIP)
(14-lead SOIC)
Min.
-0.3
V
B
- 20
V
S
- 0.3
-0.3
-0.3
V
SS
- 0.3
V
SS
- 0.3
V
CC
- 20
-50
Max.
620 (Note 1)
V
B
+ 0.3
V
B
+ 0.3
20 (Note 1)
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
1.0
0.625
1.6
1.0
125
200
75
120
150
150
300
Units
V
V/ns
P
D
Package power dissipation @ T
A
£
+25
°C
W
Rth
JA
Thermal resistance, junction to ambient
°C/W
T
J
T
S
T
L
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
°C
Note 1: All supplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.
www.irf.com
2
IRS2184/IRS21844(S)PbF
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at a 15 V differential.
Symbol
V
B
V
S
V
St
V
HO
V
CC
V
LO
V
IN
DT
V
SS
T
A
Definition
High-side floating supply absolute voltage
High-side floating supply offset voltage
Transient high-side floating supply offset voltage
High-side floating output voltage
Low-side and logic fixed supply voltage
Low-side output voltage
Logic input voltage (IN & SD)
Programmable deadtime pin voltage (IRS21844 only)
Logic ground (IRS21844 only)
Ambient temperature
Min.
V
S
+ 10
COM -8 (Note 2)
-50 (Note 3)
V
S
10
0
V
SS
V
SS
-5
-40
Max.
V
S
+ 20
600
600
V
B
20
V
CC
V
CC
V
CC
5
125
Units
V
°C
Note 2:
Logic operational for V
S
of -5 V to +600 V. Logic state held for V
S
of -5 V to -V
BS
. (Please refer to the Design
Tip DT97-3 for more details).
Note 3:
Operational for transient negative VS of COM - 50 V with a 50 ns pulse width. Guaranteed by design. Refer to
the Application Information section of this datasheet for more details.
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25° C, DT = V
SS
unless otherwise specified.
Symbol
ton
toff
tsd
MTon
MToff
tr
tf
DT
MDT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Delay matching, HS & LS turn-on
Delay matching, HS & LS turn-off
Turn-on rise time
Turn-off fall time
Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
HO turn-off to LO turn-on (DT
HO-LO)
Deadtime matching = DT
LO - HO
- DT
HO-LO
Min.
280
4
Typ.
680
270
180
0
0
40
20
400
5
0
0
Max. Units Test Conditions
900
400
270
90
40
60
35
520
6
50
600
ms
ns
V
S
= 0 V
R
DT
= 0
W
R
DT
= 200 kW
R
DT
=0
W
R
DT
= 200 kW
ns
V
S
= 0 V
V
S
= 0 V or 600 V
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3
IRS2184/IRS21844(S)PbF
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
SS
= COM, DT= V
SS
and T
A
= 25
°C
unless otherwise specified. The V
IL
, V
IH,
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: IN and SD. The V
O
, I
O,
and
Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V
IH
V
IL
V
SD,TH+
V
SD,TH-
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Definition
Logic “1” input voltage for HO & logic “0” for LO
Logic “0” input voltage for HO & logic “1” for LO
SD input positive going threshold
SD input negative going threshold
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
V
CC
and V
BS
supply undervoltage positive going
threshold
V
CC
and V
BS
supply undervoltage negative going
threshold
Hysteresis
Output high short circuit pulsed current
Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
2.5
2.5
20
0.4
8.0
7.4
0.3
1.4
1.8
60
1.0
25
8.9
8.2
0.7
1.9
2.3
0.8
0.8
1.4
0.2
50
150
1.6
60
5.0
9.8
9.0
V
A
V
O
= 0 V,
PW
£
10
µs
V
O
= 15 V,
PW
£
10
µs
µA
mA
µA
V
I
O
= 0 A
I
O
= 20 mA
V
B
= V
S
= 600 V
V
IN
= 0 V or 5 V
IN = 5 V, SD = 0 V
IN = 0 V, SD = 5 V
V
CC
= 10 V to 20 V
www.irf.com
4
IRS2184/IRS21844(S)PbF
Functional Block Diagrams
VB
2184
IN
VSS/COM
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
VS
DEADTIME
UV
DETECT
VCC
+5V
LO
SD
VSS/COM
LEVEL
SHIFT
DELAY
COM
VB
21844
IN
VSS/COM
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
VS
DT
+5V
DEADTIME
UV
DETECT
VCC
LO
SD
VSS/COM
LEVEL
SHIFT
DELAY
COM
VSS
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参数对比
与IRS21844PBF相近的元器件有:IRS21844SPBF。描述及对比如下:
型号 IRS21844PBF IRS21844SPBF
描述 MOSFET MOSFET MOSFT 55V 98A 8mOhm 113.3nCAC
是否Rohs认证 符合 符合
厂商名称 Infineon(英飞凌) Infineon(英飞凌)
包装说明 DIP, DIP14,.3 SOP, SOP14,.25
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
内置保护 TRANSIENT; UNDER VOLTAGE TRANSIENT; UNDER VOLTAGE
接口集成电路类型 HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码 R-PDIP-T14 R-PDSO-G14
长度 19.305 mm 8.65 mm
功能数量 1 1
端子数量 14 14
最高工作温度 125 °C 125 °C
最低工作温度 -40 °C -40 °C
输出电流流向 SOURCE AND SINK SOURCE AND SINK
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP SOP
封装等效代码 DIP14,.3 SOP14,.25
封装形状 RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
电源 15 V 15 V
认证状态 Not Qualified Not Qualified
座面最大高度 5.33 mm 1.75 mm
最大供电电压 20 V 20 V
最小供电电压 10 V 10 V
标称供电电压 15 V 15 V
表面贴装 NO YES
技术 CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE
端子形式 THROUGH-HOLE GULL WING
端子节距 2.54 mm 1.27 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
断开时间 0.4 µs 0.4 µs
接通时间 0.9 µs 0.9 µs
宽度 7.62 mm 3.9 mm
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