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IS46LD32160A-18BLA2

DDR DRAM, 16MX32, CMOS, PBGA134, FBGA-134

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Integrated Silicon Solution ( ISSI )
包装说明
TFBGA,
Reach Compliance Code
compli
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
其他特性
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
JESD-30 代码
R-PBGA-B134
JESD-609代码
e1
长度
11.5 mm
内存密度
536870912 bi
内存集成电路类型
DDR DRAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
134
字数
16777216 words
字数代码
16000000
工作模式
SYNCHRONOUS
组织
16MX32
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)
260
座面最大高度
1.1 mm
自我刷新
YES
最大供电电压 (Vsup)
1.3 V
最小供电电压 (Vsup)
1.14 V
标称供电电压 (Vsup)
1.2 V
表面贴装
YES
技术
CMOS
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
BALL
端子节距
0.65 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
10
宽度
10 mm
参数对比
与IS46LD32160A-18BLA2相近的元器件有:IS43LD32160A-18BLI、IS46LD32160A-18BLA1、IS46LD32160A-18BPLA1、IS46LD32160A-18BPLA2、IS46LD32160A-25BPLA2、IS46LD32160A-3BPLA1、IS46LD32160A-3BPLA2。描述及对比如下:
型号 IS46LD32160A-18BLA2 IS43LD32160A-18BLI IS46LD32160A-18BLA1 IS46LD32160A-18BPLA1 IS46LD32160A-18BPLA2 IS46LD32160A-25BPLA2 IS46LD32160A-3BPLA1 IS46LD32160A-3BPLA2
描述 DDR DRAM, 16MX32, CMOS, PBGA134, FBGA-134 DDR DRAM, 16MX32, CMOS, PBGA134, FBGA-134 DDR DRAM, 16MX32, CMOS, PBGA134, FBGA-134 DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
包装说明 TFBGA, TFBGA, TFBGA, VFBGA, VFBGA, VFBGA, VFBGA, VFBGA,
Reach Compliance Code compli compli compli compli compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
其他特性 SELF REFRESH; IT ALSO REQUIRES 1.8V NOM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
JESD-30 代码 R-PBGA-B134 R-PBGA-B134 R-PBGA-B134 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168
JESD-609代码 e1 e1 e1 e1 e1 e1 e1 e1
长度 11.5 mm 11.5 mm 11.5 mm 12 mm 12 mm 12 mm 12 mm 12 mm
内存密度 536870912 bi 536870912 bi 536870912 bi 536870912 bi 536870912 bi 536870912 bi 536870912 bi 536870912 bi
内存集成电路类型 DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 32 32 32 32 32 32 32 32
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 134 134 134 168 168 168 168 168
字数 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
字数代码 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
组织 16MX32 16MX32 16MX32 16MX32 16MX32 16MX32 16MX32 16MX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA VFBGA VFBGA VFBGA VFBGA VFBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 260 NOT SPECIFIED 260 260 260 260 260 260
座面最大高度 1.1 mm 1.1 mm 1.1 mm 0.95 mm 0.95 mm 0.95 mm 0.95 mm 0.95 mm
自我刷新 YES YES YES YES YES YES YES YES
最大供电电压 (Vsup) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
最小供电电压 (Vsup) 1.14 V 1.14 V 1.14 V 1.14 V 1.14 V 1.14 V 1.14 V 1.14 V
标称供电电压 (Vsup) 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 0.65 mm 0.65 mm 0.65 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 10 NOT SPECIFIED 10 10 10 10 10 10
宽度 10 mm 10 mm 10 mm 12 mm 12 mm 12 mm 12 mm 12 mm
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L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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