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IS61C256AH-15TI

Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, TSOP1-28

器件类别：存储    存储   

厂商名称：Integrated Silicon Solution ( ISSI )

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
零件包装代码
TSOP
包装说明
TSOP1-28
针数
28
Reach Compliance Code
compliant
ECCN代码
EAR99
最长访问时间
15 ns
I/O 类型
COMMON
JESD-30 代码
R-PDSO-G28
JESD-609代码
e0
长度
11.8 mm
内存密度
262144 bit
内存集成电路类型
STANDARD SRAM
内存宽度
8
功能数量
1
端口数量
1
端子数量
28
字数
32768 words
字数代码
32000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
32KX8
输出特性
3-STATE
可输出
YES
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP1
封装等效代码
TSSOP28,.53,22
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
并行/串行
PARALLEL
峰值回流温度（摄氏度）
240
电源
5 V
认证状态
Not Qualified
座面最大高度
1.2 mm
最大待机电流
0.01 A
最小待机电流
4.5 V
最大压摆率
0.155 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.55 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
8 mm
文档预览
IS61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 10, 12, 15, 20 ns
• Low active power: 400 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby
— 55 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
ISSI
®
JULY 2002
DESCRIPTION
The
ISSI
IS61C256AH is a very high-speed, low power,
32,768 word by 8-bit static RAMs. They are fabricated using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 10 ns maximum.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Enable (CE) input and an active LOW Output
Enable (OE) input. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C256AH is pin compatible with other 32K x 8
SRAMs and are available in 28-pin SOJ and TSOP (Type I)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes this specification herein and it products at any time without notice. ISSI assumes no responsibility or liability arising out of the application or use of any information,
product or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
© Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
SR020-1P
07/17/2002
1
IS61C256AH
PIN CONFIGURATION
28-Pin SOJ
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
ISSI
PIN CONFIGURATION
28-Pin TSOP
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
®
PIN DESCRIPTIONS
A0-A14
CE
OE
WE
I/O0-I/O7
Vcc
GND
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Bidirectional Ports
Power
Ground
TRUTH TABLE
Mode
WE
CE
H
L
L
L
OE
X
H
L
X
I/O Operation Vcc Current
High-Z
High-Z
D
OUT
D
IN
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
Not Selected
X
(Power-down)
Output Disabled H
Read
H
Write
L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
1.5
20
Unit
V
°C
°C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
SR020-1P
07/17/02
IS61C256AH
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
Speed
-10, -12
-15, -20
-12
-15, -20
V
CC
5V ± 5%
5V ± 10%
5V ± 5%
5V ± 10%
ISSI
®
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND - V
IN
- V
CC
GND - V
OUT
- V
CC
,
Outputs Disabled
Com.
Ind.
Com.
Ind.
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.5
–5
–10
–5
–10
Max.
—
0.4
V
CC
+ 0.5
0.8
5
10
5
10
Unit
V
V
V
V
µA
µA
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
SB
1
Parameter
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
• V
IH
, f = 0
V
CC
= Max.,
CE
• V
CC
– 0.2V,
V
IN
• V
CC
– 0.2V, or
V
IN
- 0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
-10
-12
-15
-20
Min. Max. Min. Max. Min. Max. Min. Max.
—
—
—
—
—
—
165
—
25
—
2
—
—
—
—
—
—
—
155
165
25
30
2
10
—
—
—
—
—
—
145
155
25
30
2
10
—
—
—
—
—
—
135
145
25
30
2
10
Unit
mA
mA
I
SB
2
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
SR020-1P
07/17/02
3
IS61C256AH
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
ISSI
®
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to Low-Z Output
OE
to High-Z Output
CE
to Low-Z Output
CE
to High-Z Output
CE
to Power-Up
CE
to Power-Down
-10 ns
Min. Max
10
—
2
—
—
0
—
2
—
0
—
—
10
—
10
5
—
5
—
5
—
10
-12 ns
Min.
Max.
12
—
2
—
—
0
—
3
—
0
—
—
12
—
12
5
—
6
—
7
—
12
-15 ns
Min.
Max.
15
—
2
—
—
0
—
3
—
0
—
—
15
—
15
7
—
7
—
8
—
15
-20 ns
Min.
Max.
20
—
2
—
—
0
—
3
—
0
—
—
20
—
20
8
—
9
—
9
—
18
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
(2)
t
HZCE
(2)
t
PU
(3)
t
PD
(3)
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
SR020-1P
07/17/02
IS61C256AH
AC TEST LOADS
480
Ω
5V
5V
480
Ω
ISSI
®
OUTPUT
30 pF
Including
jig and
scope
255
Ω
OUTPUT
5 pF
Including
jig and
scope
255
Ω
Figure 1
Figure 2
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
t
RC
ADDRESS
t
AA
t
OHA
D
OUT
PREVIOUS DATA VALID
t
OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2
(1,3)
t
RC
ADDRESS
t
AA
OE
t
OHA
t
DOE
CE
t
HZOE
t
LZOE
t
ACE
t
LZCE
t
HZCE
DATA VALID
CE_RD2.eps
D
OUT
HIGH-Z
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CE
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
SR020-1P
07/17/02
5
查看更多>
参数对比
与IS61C256AH-15TI相近的元器件有：IS61C256AH-12J、IS61C256AH-12JI、IS61C256AH-20TI、IS61C256AH-20T、IS61C256AH-20J、IS61C256AH-12TI、IS61C256AH-15J。描述及对比如下：
型号 IS61C256AH-15TI IS61C256AH-12J IS61C256AH-12JI IS61C256AH-20TI IS61C256AH-20T IS61C256AH-20J IS61C256AH-12TI IS61C256AH-15J
描述 Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, TSOP1-28 Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, TSOP1-28 Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, TSOP1-28 Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, TSOP1-28 Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 TSOP SOJ SOJ TSOP TSOP SOJ TSOP SOJ
包装说明 TSOP1-28 0.300 INCH, PLASTIC, SOJ-28 0.300 INCH, PLASTIC, SOJ-28 TSOP1-28 TSOP1-28 0.300 INCH, PLASTIC, SOJ-28 TSOP1-28 0.300 INCH, PLASTIC, SOJ-28
针数 28 28 28 28 28 28 28 28
Reach Compliance Code compliant compliant compliant unknown unknown unknown compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 3A991 EAR99 EAR99
最长访问时间 15 ns 12 ns 12 ns 20 ns 20 ns 20 ns 12 ns 15 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-G28 R-PDSO-J28 R-PDSO-J28 R-PDSO-G28 R-PDSO-G28 R-PDSO-J28 R-PDSO-G28 R-PDSO-J28
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 11.8 mm 18.161 mm 18.161 mm 11.8 mm 11.8 mm 18.161 mm 11.8 mm 18.161 mm
内存密度 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bi 262144 bi
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 28 28 28 28 28 28 28 28
字数 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
字数代码 32000 32000 32000 32000 32000 32000 32000 32000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 85 °C 70 °C 70 °C 85 °C 70 °C
组织 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
可输出 YES YES YES YES YES YES YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP1 SOJ SOJ TSOP1 TSOP1 SOJ TSOP1 SOJ
封装等效代码 TSSOP28,.53,22 SOJ28,.34 SOJ28,.34 TSSOP28,.53,22 TSSOP28,.53,22 SOJ28,.34 TSSOP28,.53,22 SOJ28,.34
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度（摄氏度） 240 240 NOT SPECIFIED 240 NOT SPECIFIED 240 240 240
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 3.556 mm 3.556 mm 1.2 mm 1.2 mm 3.556 mm 1.2 mm 3.556 mm
最大待机电流 0.01 A 0.002 A 0.01 A 0.01 A 0.002 A 0.002 A 0.01 A 0.002 A
最小待机电流 4.5 V 4.75 V 4.75 V 4.5 V 4.5 V 4.5 V 4.75 V 4.5 V
最大压摆率 0.155 mA 0.155 mA 0.165 mA 0.145 mA 0.135 mA 0.135 mA 0.165 mA 0.145 mA
最大供电电压 (Vsup) 5.5 V 5.25 V 5.25 V 5.5 V 5.5 V 5.5 V 5.25 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.75 V 4.75 V 4.5 V 4.5 V 4.5 V 4.75 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING J BEND J BEND GULL WING GULL WING J BEND GULL WING J BEND
端子节距 0.55 mm 1.27 mm 1.27 mm 0.55 mm 0.55 mm 1.27 mm 0.55 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 10 NOT SPECIFIED 30 NOT SPECIFIED 10 30 10
宽度 8 mm 7.59 mm 7.59 mm 8 mm 8 mm 7.59 mm 8 mm 7.59 mm
厂商名称 Integrated Silicon Solution ( ISSI ) - - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
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