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IS61LV12824-9BI

Standard SRAM, 128KX24, 9ns, CMOS, PBGA119, PLASTIC, BGA-119

器件类别：存储    存储   

厂商名称：Integrated Silicon Solution ( ISSI )

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
零件包装代码
BGA
包装说明
PLASTIC, BGA-119
针数
119
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
9 ns
I/O 类型
COMMON
JESD-30 代码
R-PBGA-B119
JESD-609代码
e0
长度
22 mm
内存密度
3145728 bit
内存集成电路类型
STANDARD SRAM
内存宽度
24
功能数量
1
端子数量
119
字数
131072 words
字数代码
128000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
128KX24
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装等效代码
BGA119,7X17,50
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
座面最大高度
2.41 mm
最大待机电流
0.02 A
最小待机电流
3.14 V
最大压摆率
0.22 mA
最大供电电压 (Vsup)
3.63 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
14 mm
文档预览
IS61LV12824
128K x 24 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 8, 9, 10, 12 ns
• CMOS low power operation
— 756 mW (max.) operating @ 8 ns
— 36 mW (max.) standby @ 8 ns
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Available in 119-pin Plastic Ball Grid Array
(PBGA) and 100-pin TQFP packages.
• Industrial temperature available
ISSI
®
DECEMBER 1999
DESCRIPTION
The
ISSI
IS61LV12824 is a high-speed, static RAM organized
as 131,072 words by 24 bits. It is fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields ac-
cess times as fast as 8 ns with low power consumption.
When
CE1, CE2
are HIGH and CE2 is LOW (deselected), the
device assumes a standby mode at which the power dissipa-
tion can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE1,
CE2,
CE2
and
OE.
The active
LOW Write Enable (WE) controls both writing and reading of
the memory.
The IS61LV12824 is packaged in the JEDEC standard
119-pin PBGA and 100-pin TQFP.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 24
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O23
COLUMN I/O
CE2
CE1
CE2
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
1
IS61LV12824
ISSI
PIN DESCRIPTIONS
6
A4
A3
NC
V
CCQ
GND
V
CCQ
GND
V
CCQ
GND
V
CCQ
GND
V
CCQ
GND
V
CCQ
NC
A1
A2
7
NC
NC
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
V
CCQ
I/O6
I/O7
I/O8
I/O9
I/O10
I/O11
NC
NC
A0-A16
CE1, CE2
CE2
OE
WE
NC
Vcc
V
CCQ
GND
Address Inputs
Chip Enable Input LOW
I/O0-I/O23 Data Inputs/Outputs
3
A14
A13
CE2
GND
V
CC
GND
V
CC
GND
V
CC
GND
V
CC
GND
V
CC
GND
NC
A8
A7
4
A15
CE1
NC
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
NC
WE
OE
5
A16
A5
CE2
GND
V
CC
GND
V
CC
GND
V
CC
GND
V
CC
GND
V
CC
GND
NC
A0
A6
®
PIN CONFIGURATION - 119-pin PBGA
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
NC
NC
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
V
CCQ
I/O22
I/O23
I/O12
I/O13
I/O14
I/O15
NC
NC
2
A11
A12
NC
V
CCQ
GND
V
CCQ
GND
V
CCQ
GND
V
CCQ
GND
V
CCQ
GND
V
CCQ
NC
A10
A9
Chip Enable Input HIGH
Output Enable Input
Write Enable Input
No Connection
Power
I/O Power
Ground
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
IS61LV12824
ISSI
NC
NC
A11
A12
A13
A14
A15
CE2
Vcc
GND
CE2
CE1
A16
A5
A4
A3
NC
NC
NC
NC
®
PIN CONFIGURATION
100-Pin TQFP
1
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
Vcc
GND
I/O0
I/O1
GND
Vcc
Q
I/O2
I/O3
GND
Vcc
Q
I/O4
I/O5
Vcc
NC
NC
GND
I/O6
I/O7
Vcc
Q
GND
I/O8
I/O9
Vcc
Q
GND
I/O10
I/O11
Vcc
GND
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
Vcc
GND
I/O16
I/O17
GND
Vcc
Q
I/O18
I/O19
GND
Vcc
Q
I/O20
I/O21
Vcc
NC
NC
GND
I/O22
I/O23
Vcc
Q
GND
I/O12
I/O13
Vcc
Q
GND
I/O14
I/O15
Vcc
GND
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
2
3
4
5
6
7
8
9
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
NC
NC
NC
NC
A10
A9
A8
A7
OE
GND
Vcc
WE
A6
A0
A1
A2
NC
NC
NC
NC
3
IS61LV12824
TRUTH TABLE
Mode
Not Selected
WE
X
X
X
H
H
L
CE1
H
X
X
L
L
L
CE2
X
L
X
H
H
H
CE2
X
X
H
L
L
L
OE
X
X
X
H
L
X
I/O0-I/O23
High-Z
Vcc Current
I
SB
1
, I
SB
2
ISSI
High-Z
D
OUT
D
IN
I
CC
I
CC
I
CC
®
Output Disabled
Read
Write
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
STG
T
BIAS
P
T
I
OUT
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias:
Com.
Ind.
Power Dissipation
DC Output Current
Value
–0.5 to 5.0
–0.5 to Vcc + 0.5
–65 to + 150
–10 to + 85
–45 to + 90
2.0
±20
Unit
V
V
°C
°C
°C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
(8, 9 ns)
3.3V + 10%, – 5%
3.3V + 10%, – 5%
V
CC
(10, 12 ns)
3.3V ± 10%
3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.3
–1
–1
Max.
—
0.4
V
CC
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width
≤
2.0 ns).
V
IH
(max.) = V
CC
+ 0.3V DC; V
IH
(max.) = V
CC
+ 2.0V AC (pulse width
≤
2.0 ns).
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
IS61LV12824
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
Symbol Parameter
I
CC
I
SB
1
Test Conditions
Com.
Ind.
Com.
Ind.
Min. Max.
ISSI
-9 ns
Min. Max.
®
-10 ns
Min. Max.
-12 ns
Min. Max.
Unit
mA
mA
Vcc Dynamic Operating V
CC
= Max.,
Supply Current
I
OUT
= 0 mA, f = f
MAX
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
, f = max.
CE1, CE2,
≥
V
IH
, CE2
≤
V
IL
—
—
—
—
—
—
210
—
70
—
10
—
—
—
—
—
—
—
200
220
60
70
10
20
—
—
—
—
—
—
180
210
50
55
10
20
—
—
—
—
—
—
170
190
50
55
10
20
1
2
I
SB
2
V
CC
= Max.,
Com.
CE1, CE2
≥
V
CC
– 0.2V,
Ind.
CE2
≤
0.2V, V
IN
≥
V
CC
– 0.2V,
or V
IN
≤
0.2V, f = 0
mA
3
4
5
6
7
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
2 ns
1.5V
See Figures 1 and 2
8
9
AC TEST LOADS
319
Ω
10
11
353
Ω
Z
O
= 50Ω
OUTPUT
50Ω
3.3V
OUTPUT
5 pF
Including
jig and
scope
1.5V
12
Figure 1
Figure 2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
5
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参数对比
与IS61LV12824-9BI相近的元器件有：IS61LV12824-12TQI、IS61LV12824-9TQI、IS61LV12824-12B、IS61LV12824-12BI、IS61LV12824-9B、IS61LV12824-12TQ、IS61LV12824-9TQ、IS61LV12824-8B、IS61LV12824-10BI。描述及对比如下：
型号 IS61LV12824-9BI IS61LV12824-12TQI IS61LV12824-9TQI IS61LV12824-12B IS61LV12824-12BI IS61LV12824-9B IS61LV12824-12TQ IS61LV12824-9TQ IS61LV12824-8B IS61LV12824-10BI
描述 Standard SRAM, 128KX24, 9ns, CMOS, PBGA119, PLASTIC, BGA-119 Standard SRAM, 128KX24, 12ns, CMOS, PQFP100, TQFP-100 Standard SRAM, 128KX24, 9ns, CMOS, PQFP100, TQFP-100 Standard SRAM, 128KX24, 12ns, CMOS, PBGA119, PLASTIC, BGA-119 Standard SRAM, 128KX24, 12ns, CMOS, PBGA119, PLASTIC, BGA-119 Standard SRAM, 128KX24, 9ns, CMOS, PBGA119, PLASTIC, BGA-119 Standard SRAM, 128KX24, 12ns, CMOS, PQFP100, TQFP-100 Standard SRAM, 128KX24, 9ns, CMOS, PQFP100, TQFP-100 Standard SRAM, 128KX24, 8ns, CMOS, PBGA119, PLASTIC, BGA-119 Standard SRAM, 128KX24, 10ns, CMOS, PBGA119, PLASTIC, BGA-119
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 BGA QFP QFP BGA BGA BGA QFP QFP BGA BGA
包装说明 PLASTIC, BGA-119 TQFP-100 TQFP-100 PLASTIC, BGA-119 PLASTIC, BGA-119 PLASTIC, BGA-119 TQFP-100 TQFP-100 BGA, BGA119,7X17,50 BGA, BGA119,7X17,50
针数 119 100 100 119 119 119 100 100 119 119
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 9 ns 12 ns 9 ns 12 ns 12 ns 9 ns 12 ns 9 ns 8 ns 10 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PBGA-B119
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
长度 22 mm 20 mm 20 mm 22 mm 22 mm 22 mm 20 mm 20 mm 22 mm 22 mm
内存密度 3145728 bit 3145728 bit 3145728 bit 3145728 bit 3145728 bit 3145728 bit 3145728 bit 3145728 bit 3145728 bit 3145728 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 24 24 24 24 24 24 24 24 24 24
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 119 100 100 119 119 119 100 100 119 119
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 70 °C 85 °C 70 °C 70 °C 70 °C 70 °C 85 °C
组织 128KX24 128KX24 128KX24 128KX24 128KX24 128KX24 128KX24 128KX24 128KX24 128KX24
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA LQFP LQFP BGA BGA BGA LQFP LQFP BGA BGA
封装等效代码 BGA119,7X17,50 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 BGA119,7X17,50
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY GRID ARRAY GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.41 mm 1.6 mm 1.6 mm 2.41 mm 2.41 mm 2.41 mm 1.6 mm 1.6 mm 2.41 mm 2.41 mm
最大待机电流 0.02 A 0.02 A 0.02 A 0.01 A 0.02 A 0.01 A 0.01 A 0.01 A 0.01 A 0.02 A
最小待机电流 3.14 V 3 V 3.14 V 3 V 3 V 3.14 V 3 V 3.14 V 3.14 V 3 V
最大压摆率 0.22 mA 0.19 mA 0.22 mA 0.17 mA 0.19 mA 0.2 mA 0.17 mA 0.2 mA 0.21 mA 0.21 mA
最大供电电压 (Vsup) 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V
最小供电电压 (Vsup) 3.135 V 2.97 V 3.135 V 2.97 V 2.97 V 3.135 V 2.97 V 3.135 V 3.135 V 2.97 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 BALL GULL WING GULL WING BALL BALL BALL GULL WING GULL WING BALL BALL
端子节距 1.27 mm 0.65 mm 0.65 mm 1.27 mm 1.27 mm 1.27 mm 0.65 mm 0.65 mm 1.27 mm 1.27 mm
端子位置 BOTTOM QUAD QUAD BOTTOM BOTTOM BOTTOM QUAD QUAD BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
厂商名称 Integrated Silicon Solution ( ISSI ) - - - - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
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