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IS61SP25616-133B

Cache SRAM, 256KX16, 4ns, CMOS, PBGA119, PLASTIC, BGA-119

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
零件包装代码
BGA
包装说明
PLASTIC, BGA-119
针数
119
Reach Compliance Code
unknow
ECCN代码
3A991.B.2.A
最长访问时间
4 ns
其他特性
SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
最大时钟频率 (fCLK)
133 MHz
I/O 类型
COMMON
JESD-30 代码
R-PBGA-B119
JESD-609代码
e0
长度
22 mm
内存密度
4194304 bi
内存集成电路类型
CACHE SRAM
内存宽度
16
功能数量
1
端子数量
119
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装等效代码
BGA119,7X17,50
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
座面最大高度
2.41 mm
最大待机电流
0.015 A
最小待机电流
3.14 V
最大压摆率
0.17 mA
最大供电电压 (Vsup)
3.63 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
14 mm
参数对比
与IS61SP25616-133B相近的元器件有:IS61SP25618-133TQ、IS61SP25618-133TQI、IS61SP25616-133TQI、IS61SP25618-166TQ、IS61SP25616-150B、IS61SP25618-150TQ、IS61SP25618-150TQI、IS61SP25618-133B、IS61SP25618-5B。描述及对比如下:
型号 IS61SP25616-133B IS61SP25618-133TQ IS61SP25618-133TQI IS61SP25616-133TQI IS61SP25618-166TQ IS61SP25616-150B IS61SP25618-150TQ IS61SP25618-150TQI IS61SP25618-133B IS61SP25618-5B
描述 Cache SRAM, 256KX16, 4ns, CMOS, PBGA119, PLASTIC, BGA-119 Cache SRAM, 256KX18, 4ns, CMOS, PQFP100, TQFP-100 Cache SRAM, 256KX18, 4ns, CMOS, PQFP100, TQFP-100 Cache SRAM, 256KX16, 4ns, CMOS, PQFP100, TQFP-100 Cache SRAM, 256KX18, 3.5ns, CMOS, PQFP100, TQFP-100 Cache SRAM, 256KX16, 3.8ns, CMOS, PBGA119, PLASTIC, BGA-119 Cache SRAM, 256KX18, 3.8ns, CMOS, PQFP100, TQFP-100 Cache SRAM, 256KX18, 3.8ns, CMOS, PQFP100, TQFP-100 Cache SRAM, 256KX18, 4ns, CMOS, PBGA119, PLASTIC, BGA-119 Cache SRAM, 256KX18, 5ns, CMOS, PBGA119, PLASTIC, BGA-119
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
零件包装代码 BGA QFP QFP QFP QFP BGA QFP QFP BGA BGA
包装说明 PLASTIC, BGA-119 TQFP-100 TQFP-100 TQFP-100 TQFP-100 PLASTIC, BGA-119 TQFP-100 TQFP-100 PLASTIC, BGA-119 PLASTIC, BGA-119
针数 119 100 100 100 100 119 100 100 119 119
Reach Compliance Code unknow compliant compliant unknown compli unknow compli compli compli compli
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 4 ns 4 ns 4 ns 4 ns 3.5 ns 3.8 ns 3.8 ns 3.8 ns 4 ns 5 ns
其他特性 SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
最大时钟频率 (fCLK) 133 MHz 133 MHz 133 MHz 133 MHz 166 MHz 150 MHz 150 MHz 150 MHz 133 MHz 100 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PBGA-B119
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
长度 22 mm 20 mm 20 mm 20 mm 20 mm 22 mm 20 mm 20 mm 22 mm 22 mm
内存密度 4194304 bi 4718592 bit 4718592 bit 4194304 bit 4718592 bi 4194304 bi 4718592 bi 4718592 bi 4718592 bi 4718592 bi
内存集成电路类型 CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM
内存宽度 16 18 18 16 18 16 18 18 18 18
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 119 100 100 100 100 119 100 100 119 119
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000 256000 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C 85 °C 70 °C 70 °C 70 °C 85 °C 70 °C 70 °C
组织 256KX16 256KX18 256KX18 256KX16 256KX18 256KX16 256KX18 256KX18 256KX18 256KX18
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA LQFP LQFP LQFP LQFP BGA LQFP LQFP BGA BGA
封装等效代码 BGA119,7X17,50 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 BGA119,7X17,50
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED 240 240 NOT SPECIFIED 240 NOT SPECIFIED 240 240 240 240
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.41 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 2.41 mm 1.6 mm 1.6 mm 2.41 mm 2.41 mm
最大待机电流 0.015 A 0.015 A 0.02 A 0.02 A 0.015 A 0.015 A 0.015 A 0.02 A 0.015 A 0.015 A
最小待机电流 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
最大压摆率 0.17 mA 0.17 mA 0.18 mA 0.18 mA 0.21 mA 0.19 mA 0.19 mA 0.2 mA 0.17 mA 0.16 mA
最大供电电压 (Vsup) 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V
最小供电电压 (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 BALL GULL WING GULL WING GULL WING GULL WING BALL GULL WING GULL WING BALL BALL
端子节距 1.27 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 1.27 mm 0.65 mm 0.65 mm 1.27 mm 1.27 mm
端子位置 BOTTOM QUAD QUAD QUAD QUAD BOTTOM QUAD QUAD BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 30 NOT SPECIFIED 30 NOT SPECIFIED 30 30 30 30
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
是否无铅 - 含铅 含铅 - 含铅 - 含铅 含铅 含铅 含铅
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