型号
- 型号
- 关键词
Cache SRAM, 256KX16, 4ns, CMOS, PQFP100, TQFP-100
厂商名称：Integrated Silicon Solution ( ISSI )
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| 型号 | IS61SP25616-133TQ | IS61SP25616-166TQ | IS61SP25616-150TQ | IS61SP25616-5TQI | IS61SP25616-5TQ | IS61SP25616-166B |
|---|---|---|---|---|---|---|
| 描述 | Cache SRAM, 256KX16, 4ns, CMOS, PQFP100, TQFP-100 | Cache SRAM, 256KX16, 3.5ns, CMOS, PQFP100, TQFP-100 | Cache SRAM, 256KX16, 3.8ns, CMOS, PQFP100, TQFP-100 | Cache SRAM, 256KX16, 5ns, CMOS, PQFP100, TQFP-100 | Cache SRAM, 256KX16, 5ns, CMOS, PQFP100, TQFP-100 | Cache SRAM, 256KX16, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | QFP | QFP | QFP | QFP | QFP | BGA |
| 包装说明 | TQFP-100 | TQFP-100 | TQFP-100 | TQFP-100 | TQFP-100 | PLASTIC, BGA-119 |
| 针数 | 100 | 100 | 100 | 100 | 100 | 119 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow | unknow |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 4 ns | 3.5 ns | 3.8 ns | 5 ns | 5 ns | 3.5 ns |
| 其他特性 | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE |
| 最大时钟频率 (fCLK) | 133 MHz | 166 MHz | 150 MHz | 100 MHz | 100 MHz | 166 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm | 22 mm |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bi | 4194304 bi |
| 内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 100 | 100 | 100 | 100 | 100 | 119 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 85 °C | 70 °C | 70 °C |
| 组织 | 256KX16 | 256KX16 | 256KX16 | 256KX16 | 256KX16 | 256KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | LQFP | LQFP | LQFP | LQFP | LQFP | BGA |
| 封装等效代码 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | BGA119,7X17,50 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | GRID ARRAY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm | 2.41 mm |
| 最大待机电流 | 0.015 A | 0.015 A | 0.015 A | 0.02 A | 0.015 A | 0.015 A |
| 最小待机电流 | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V |
| 最大压摆率 | 0.17 mA | 0.21 mA | 0.19 mA | 0.17 mA | 0.16 mA | 0.21 mA |
| 最大供电电压 (Vsup) | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V |
| 最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | BALL |
| 端子节距 | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 1.27 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
