IS61WV51232BLL-10BI,IS61WV51232BLL-10BI pdf中文资料,IS61WV51232BLL-10BI引脚图,IS61WV51232BLL-10BI电路-Datasheet-电子工程世界

参数对比

与IS61WV51232BLL-10BI相近的元器件有：IS61WV51232ALL、IS61WV51232ALL-20BI、IS61WV51232ALS、IS61WV51232BLL、IS61WV51232BLS、IS64WV51232BLL、IS64WV51232BLL-10BA3、IS64WV51232BLS。描述及对比如下：

型号	IS61WV51232BLL-10BI	IS61WV51232ALL	IS61WV51232ALL-20BI	IS61WV51232ALS	IS61WV51232BLL	IS61WV51232BLS	IS64WV51232BLL	IS64WV51232BLL-10BA3	IS64WV51232BLS
描述	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90	512K X 32 STANDARD SRAM, 10 ns, PBGA90
功能数量	1	1	1	1	1	1	1	1	1
端子数量	90	90	90	90	90	90	90	90	90
最大工作温度	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	125 Cel	85 Cel
最小工作温度	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel
最大供电/工作电压	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电/工作电压	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
额定供电电压	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
加工封装描述	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90	8 X 13 MM, 0.80 MM PITCH, BGA-90	8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	Active-Unconfirmed	ACTIVE
工艺	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
包装尺寸	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
表面贴装	Yes	Yes	Yes	Yes	Yes	Yes	Yes	YES	Yes
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子间距	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm
端子涂层	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN LEAD	TIN SILVER COPPER
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	AUTOMOTIVE	INDUSTRIAL
内存宽度	32	32	32	32	32	32	32	32	32
组织	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512K X 32	512KX32	512K X 32
存储密度	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 deg	1.68E7 bit	1.68E7 deg
操作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
内存IC类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
串行并行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
最大存取时间	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	-	10 ns
无铅	Yes	Yes	Yes	Yes	Yes	Yes	Yes	-	Yes
欧盟RoHS规范	Yes	Yes	Yes	Yes	Yes	Yes	Yes	-	Yes
位数	512K	512K	512K	512K	512K	512K	512K	512K	512K