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IS64LPS102436B-166B2LA3-TR

SRAM 36M, 3.3V, 166Mhz 1024Kx36 Sync SRAM

器件类别:存储   

厂商名称:ISSI(芯成半导体)

厂商官网:http://www.issi.com/

器件标准:

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
SRAM
RoHS
Details
Memory Size
36 Mbit
Organization
1 M x 36
Maximum Clock Frequency
166 MHz
Supply Current - Max
340 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 125 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
PBGA-119
系列
Packaging
Reel
Memory Type
Synchronous
类型
Type
Synchronous Pipelined SRAM
Moisture Sensitive
Yes
工厂包装数量
Factory Pack Quantity
1000
文档预览
IS61(64)LPS102436B/IS61(64)VPS/VVPS102436B
IS61(64)LPS204818B/IS61(64)VPS/VVPS204818B
1M x 36, 1M x 32, 2M x 18
36 Mb SYNCHRONOUS PIPELINED,
SINgLE CYCLE DESELECT STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth ex-
pansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for BGA package
• Power Supply
LPS: V
dd
3.3V (+ 5%),
V
ddq
3.3V/2.5V (+ 5%)
VPS: V
dd
2.5V (+ 5%),
V
ddq
2.5V (+ 5%)
VVPS: V
dd
1.8V (+ 5%),
V
ddq
1.8V (+ 5%)
• JEDEC 100-Pin QFP, 119-ball BGA, and 165-
ball BGA packages
• Lead-free available
NOVEMBER 2017
DESCRIPTION
The 36Mb product family features high-speed, low-power
synchronous static RAMs designed to provide burstable,
high-performance memory for communication and net-
working applications. The IS61LPS/VPS102436B and
IS64LPS102436B are organized as 1,048,476 words by
36 bits. The IS61LPS102432B is organized as 1,048,476
words by 32 bits. The IS61LPS/VPS204818B is organized
as 2,096,952 words by 18 bits. Fabricated with
ISSI
's
advanced CMOS technology, the device integrates a
2-bit burst counter, high-speed SRAM core, and high-
drive capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (BWE) input combined with one or more
individual byte write signals (BWx). In addition, Global
Write (GW) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence or-
der, Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH
or left floating.
250
2.8
4
250
200
3.1
5
200
166
3.8
6
166
Units
ns
ns
MHz
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
11/03/2017
1
IS61(64)LPS102436B/IS61(64)VPS/VVPS102436B
IS61(64)LPS204818B/IS61(64)VPS/VVPS204818B
BLOCK DIAGRAM
MODE
CLK
/CKE
/ADV
/ADSC
/ADSP
A0-x
x18: x=20
x36: x=19
BINARY
COUNTER
/CE
/CLR
20/21
D
ADDRESS
REGISTER
/CE
CLK
/GW
/BWE
/BW(a-x)
x18:x=b,
x32,x36:x=d
/CE
CE2
/CE2
D
ENABLE
REGISTERS
CLK
ZZ
Q
CLK
OUTPUT
REGISTER
DQ(a-x)
x18:x=b,
x32,x36:x=d
D
Q
DQ(a-d)
BYTE WRITE
REGISTERS
CLK
Q
18/19
1Mx36;
2Mx18
Memory Array
Q1
Q0
A0
A0`
A1
A1`
INPUT
REGISTER
Power
Down
CLK
D
Q
ENABLE DELAY
REGISTERS
CLK
/OE
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
11/03/2017
IS61(64)LPS102436B/IS61(64)VPS/VVPS102436B
IS61(64)LPS204818B/IS61(64)VPS/VVPS204818B
165-PIN BgA
165-Ball, 13x15 mm BGA
119-PIN BgA
119-Ball, 14x22 mm BGA
BOTTOM VIEW
BOTTOM VIEW
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
11/03/2017
3
IS61(64)LPS102436B/IS61(64)VPS/VVPS102436B
IS61(64)LPS204818B/IS61(64)VPS/VVPS204818B
119 BGA PACKAGE PIN CONFIGURATION-
1M
x
36 (TOP VIEW)
1
A
B
C
D
E
F
g
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
2
A
A
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
TMS
3
A
A
A
Vss
Vss
Vss
BWc
Vss
NC
Vss
BWd
Vss
Vss
Vss
MODE
A
TDI
4
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
CLK
NC
BWE
A
1
*
A
0
*
V
DD
A
TCK
5
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
6
A
A
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
A
NC
7
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2
BWa-BWd
BWE
Pin Name
Synchronous Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Synchronous Address Status Processor
Synchronous Address Status Controller
Synchronous Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Synchronous Byte Write Enable
Symbol
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQa-DQd
DQPa-DQPd
V
dd
V
ddq
Vss
No Connect
Synchronous Data Inputs/Outputs
Synchronous Parity Data
Inputs/Outputs
Power Supply
I/O Power Supply
Ground
Pin Name
Asynchronous Output Enable
Asynchronous Power Sleep Mode
Burst Sequence Selection
JTAG Pins
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
11/03/2017
IS61(64)LPS102436B/IS61(64)VPS/VVPS102436B
IS61(64)LPS204818B/IS61(64)VPS/VVPS204818B
119 BGA PACKAGE PIN CONFIGURATION
2M
x
18 (TOP VIEW)
1
A
B
C
D
E
F
g
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQb
NC
V
DDQ
NC
DQb
V
DDQ
NC
DQb
V
DDQ
DQb
NC
NC
NC
V
DDQ
2
A
A
A
NC
DQb
NC
DQb
NC
V
DD
DQb
NC
DQb
NC
DQPb
A
A
TMS
3
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
Vss
Vss
Vss
Vss
MODE
A
TDI
4
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
CLK
NC
BWE
A
1
*
A
0
*
V
DD
A
TCK
5
A
A
A
Vss
Vss
Vss
Vss
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
6
A
A
A
DQPa
NC
DQa
NC
DQa
V
DD
NC
DQa
NC
DQa
NC
A
A
NC
7
V
DDQ
NC
NC
NC
DQa
V
DDQ
DQa
NC
V
DDQ
DQa
NC
V
DDQ
NC
DQa
NC
ZZ
V
DDQ
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2
BWa-BWb
BWE
Pin Name
Synchronous Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Synchronous Address Status Processor
Synchronous Address Status Controller
Synchronous Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Synchronous Byte Write Enable
Symbol
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQa-DQb
DQPa-DQPb
V
dd
V
ddq
Vss
No Connect
Synchronous Data Inputs/Outputs
Synchronous Parity Data
Inputs/Outputs
Power Supply
I/O Power Supply
Ground
Pin Name
Asynchronous Output Enable
Asynchronous Power Sleep Mode
Burst Sequence Selection
JTAG Pins
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
11/03/2017
5
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参数对比
与IS64LPS102436B-166B2LA3-TR相近的元器件有:IS61LPS102436B-200TQLI-TR、IS64LPS204818B-166TQLA3、IS64LPS102436B-166B3LA3-TR、IS64LPS102436B-166TQLA3、IS61LPS102436B-200TQLI、IS64LPS204818B-166TQLA3-TR。描述及对比如下:
型号 IS64LPS102436B-166B2LA3-TR IS61LPS102436B-200TQLI-TR IS64LPS204818B-166TQLA3 IS64LPS102436B-166B3LA3-TR IS64LPS102436B-166TQLA3 IS61LPS102436B-200TQLI IS64LPS204818B-166TQLA3-TR
描述 SRAM 36M, 3.3V, 166Mhz 1024Kx36 Sync SRAM SRAM 36Mb 200Mhz 3.3V or 2.5V 1Mx36 Sync SRAM Cache SRAM, 2MX18, 3.8ns, CMOS, PQFP100, LQFP-100 SRAM 36M, 3.3V, 166Mhz 1024Kx36 Sync SRAM SRAM 36M, 3.3V, 166Mhz 1024Kx36 Sync SRAM SRAM 36Mb 200Mhz 3.3V or 2.5V 1Mx36 Sync SRAM SRAM 36M, 3.3V, 166Mhz 1024Kx36 Sync SRAM
Product Attribute Attribute Value Attribute Value - Attribute Value Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
ISSI(芯成半导体) ISSI(芯成半导体) - ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体)
产品种类
Product Category
SRAM SRAM - SRAM SRAM SRAM SRAM
RoHS Details Details - Details Details Details Details
Memory Size 36 Mbit 36 Mbit - 36 Mbit 36 Mbit 36 Mbit 36 Mbit
Organization 1 M x 36 1 M x 36 - 1 M x 36 1 M x 36 1 M x 36 2 M x 18
Maximum Clock Frequency 166 MHz 200 MHz - 166 MHz 166 MHz 200 MHz 166 MHz
Supply Current - Max 340 mA 350 mA - 340 mA 340 mA 350 mA 340 mA
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C - - 40 C - 40 C - 40 C - 40 C
最大工作温度
Maximum Operating Temperature
+ 125 C + 85 C - + 125 C + 125 C + 85 C + 125 C
安装风格
Mounting Style
SMD/SMT SMD/SMT - SMD/SMT SMD/SMT SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
PBGA-119 TQFP-100 - BGA-165 TQFP-100 TQFP-100 TQFP-100
系列
Packaging
Reel Reel - Reel Tray Tray Reel
Memory Type Synchronous SDR - Synchronous Synchronous SDR Synchronous
类型
Type
Synchronous Pipelined SRAM Synchronous - Synchronous Pipelined SRAM Synchronous Pipelined SRAM Synchronous Synchronous Pipelined SRAM
Moisture Sensitive Yes Yes - Yes Yes Yes Yes
工厂包装数量
Factory Pack Quantity
1000 800 - 2000 72 72 800
单位重量
Unit Weight
- 0.023175 oz - - 0.023175 oz 0.023175 oz 0.023175 oz
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