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IS64WV102416BLL-10MA3

sram 16m (1mx16) 10ns async sram

器件类别:半导体    其他集成电路(IC)   

厂商名称:All Sensors

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器件:IS64WV102416BLL-10MA3

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器件参数
参数名称
属性值
Manufacture
ISSI
产品种类
Product Category
SRAM
RoHS
N
Memory Size
16 Mbi
Access Time
10 ns
电源电压-最大
Supply Voltage - Max
3.6 V
Supply Voltage - Mi
2.4 V
Maximum Operating Curre
140 mA
最大工作温度
Maximum Operating Temperature
+ 125 C
最小工作温度
Minimum Operating Temperature
- 40 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
TFBGA
系列
Packaging
Tray
工厂包装数量
Factory Pack Quantity
480
类型
Type
Asynchronous
文档预览
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
1M x 16  HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CE and OE op-
tions
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
V
dd
1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for V
dd
1.65V to 2.2V
V
dd
2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for V
dd
2.4V to 3.6V
speed = 8ns for V
dd
3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
MAY 2012
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using
ISSI
's high-perfor-
mance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be re-
duced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The device is packaged in the JEDEC standard 48-pin
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
DESCRIPTION
The
ISSI
IS61WV102416ALL/BLL and IS64WV102416BLL
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1024K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.  F
05/09/12
1
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
48-pin mini BGA (9mmx11mm)
1
2
3
4
5
6
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
VDD
I/O
14
I/O
15
A18
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
A19
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
NC
I/O
0
I/O
2
VDD
GND
I/O
6
I/O
7
NC
PIN DESCRIPTIONS
A0-A19
I/O0-I/O15
CE
OE
WE
LB
UB
NC
V
dd
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.  F
05/09/12
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
48-pin TSOP-I (12mm x 20mm)
A4
A3
A2
A1
A0
NC
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
NC
A19
A18
A17
A16
A15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A5
A6
A7
A8
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A9
A10
A11
A12
A13
A14
PIN DESCRIPTIONS
A0-A19
I/O0-I/O15
CE
OE
WE
LB
UB
NC
V
dd
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.  F
05/09/12
3
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
TRUTH TABLE
  Mode 
Not Selected
WE 
X
H
X
H
H
H
L
L
L
CE 
H
L
L
L
L
L
L
L
L
OE 
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB 
X
X
H
H
L
L
H
L
L
I/O PIN
I/O0-I/O7 
I/O8-I/O15 
High-Z
High-Z
High-Z
d
Out
High-Z
d
Out
d
in
High-Z
d
in
High-Z
High-Z
High-Z
High-Z
d
Out
d
Out
High-Z
d
in
d
in
V
DD
 Current
i
sb
1
, i
sb
2
i
CC
i
CC
Output Disabled
Read
Write
i
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol 
V
term
V
dd
t
stg
P
t
Parameter 
Terminal Voltage with Respect to GND
V
dd
Relates to GND
Storage Temperature
Power Dissipation
Value 
–0.5 to V
dd
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
  Symbol 
C
in
C
i/O
Parameter 
Input Capacitance
Input/Output Capacitance
Conditions 
V
in
= 0V
V
Out
= 0V
Max. 
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
a
= 25°C, f = 1 MHz, V
dd
= 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.  F
05/09/12
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
OPERATING RANGE (V
DD
) (IS61WV102416ALL)
  Range 
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Automotive
–40°C to +125°C
V
DD
(20 n
S
)
1.65V-2.2V
1.65V-2.2V
1.65V-2.2V
OPERATING RANGE (V
DD
) (IS61WV102416BLL)
(1)
  Range 
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
V
DD
(8 n
S
)
3.3V + 5%
3.3V + 5%
V
DD
(10 n
S
)
2.4V-3.6V
2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of
3.3V + 5%, the device meets 8ns.
OPERATING RANGE (V
DD
) (IS64WV102416BLL)
  Range 
Ambient Temperature
Automotive
–40°C to +125°C
V
DD
(10 n
S
)
2.4V-3.6V
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.  F
05/09/12
5
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参数对比
与IS64WV102416BLL-10MA3相近的元器件有:IS61WV102416BLL-10MI-TR、IS61WV102416ALL-20MI-TR、IS64WV102416BLL-10MA3-TR、IS61WV102416BLL-10MI、IS61WV102416ALL-20MI。描述及对比如下:
型号 IS64WV102416BLL-10MA3 IS61WV102416BLL-10MI-TR IS61WV102416ALL-20MI-TR IS64WV102416BLL-10MA3-TR IS61WV102416BLL-10MI IS61WV102416ALL-20MI
描述 sram 16m (1mx16) 10ns async sram sram 16mb 10ns 1mx16 async sram 3.3v sram 16m (1mx16) 20ns async sram sram 16m (1mx16) 10ns async sram sram 16m 3.3V 10ns 1M x 16 async sram sram 16m (1mx16) 20ns async sram
Manufacture ISSI ISSI ISSI ISSI ISSI ISSI
产品种类
Product Category
SRAM SRAM SRAM SRAM SRAM SRAM
RoHS N N N N N N
系列
Packaging
Tray Reel Reel Reel Tray Tray
工厂包装数量
Factory Pack Quantity
480 2000 2000 2000 480 480
Memory Size 16 Mbi 16 Mbi - 16 Mbi 16 Mbi -
Access Time 10 ns 10 ns - 10 ns 10 ns -
电源电压-最大
Supply Voltage - Max
3.6 V 3.465 V - 3.6 V 3.465 V -
Supply Voltage - Mi 2.4 V 3.135 V - 2.4 V 3.135 V -
Maximum Operating Curre 140 mA 95 mA - 140 mA 95 mA -
最大工作温度
Maximum Operating Temperature
+ 125 C + 85 C - + 125 C + 85 C -
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C - - 40 C - 40 C -
安装风格
Mounting Style
SMD/SMT SMD/SMT - SMD/SMT SMD/SMT -
封装 / 箱体
Package / Case
TFBGA TFBGA - TFBGA TFBGA -
类型
Type
Asynchronous Asynchronous - Asynchronous Asynchronous -
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