型号
- 型号
- 关键词
Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
厂商名称：Integrated Silicon Solution ( ISSI )
器件标准：
| 型号 | IS66WVE4M16EBLL-70BLI | IS66WVE4M16ECLL-70BLI | IS66WVE4M16EBLL-55BLI |
|---|---|---|---|
| 描述 | Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48 | Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48 | Pseudo Static RAM, 4MX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48 |
| 是否Rohs认证 | 符合 | 符合 | 符合 |
| 包装说明 | TFBGA, BGA48,6X8,30 | TFBGA, BGA48,6X8,30 | TFBGA, BGA48,6X8,30 |
| Reach Compliance Code | compli | compliant | compli |
| Factory Lead Time | 10 weeks | 10 weeks | 14 weeks |
| 最长访问时间 | 70 ns | 70 ns | 55 ns |
| I/O 类型 | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PBGA-B48 | R-PBGA-B48 | R-PBGA-B48 |
| JESD-609代码 | e1 | e1 | e1 |
| 长度 | 8 mm | 8 mm | 8 mm |
| 内存密度 | 67108864 bi | 67108864 bit | 67108864 bi |
| 内存集成电路类型 | PSEUDO STATIC RAM | PSEUDO STATIC RAM | PSEUDO STATIC RAM |
| 内存宽度 | 16 | 16 | 16 |
| 湿度敏感等级 | 3 | 3 | 3 |
| 功能数量 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 |
| 端子数量 | 48 | 48 | 48 |
| 字数 | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C |
| 组织 | 4MX16 | 4MX16 | 4MX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | NO | NO | NO |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA |
| 封装等效代码 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 260 | NOT SPECIFIED | NOT SPECIFIED |
| 反向引出线 | NO | NO | NO |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm |
| 最大待机电流 | 0.00015 A | 0.00015 A | 0.00015 A |
| 最小待机电流 | 2.7 V | 1.7 V | 2.7 V |
| 最大压摆率 | 0.025 mA | 0.025 mA | 0.025 mA |
| 最大供电电压 (Vsup) | 3.6 V | 1.95 V | 3.6 V |
| 最小供电电压 (Vsup) | 2.7 V | 1.7 V | 2.7 V |
| 表面贴装 | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL | BALL | BALL |
| 端子节距 | 0.75 mm | 0.75 mm | 0.75 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 10 | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 6 mm | 6 mm | 6 mm |
| 厂商名称 | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
