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ITAxxB1

Bidirectional Transil™ array for data line protection

Features

■

High surge capability Transil array:

= 40 A (8/20 µs)

Peak pulse power: 300 W (8/20 µs)

Up to 5 bidirectional Transil functions

Low clamping factor (V

/ V

) at high current

level

Low leakage current

ESD protection up to 15 kV

Figure 1.

I/O1

I/O2

I/O3

I/O4

SO-8

Functional diagram

8 GND

5 GND

Complies with the following standards

■

IEC 61000-4-2 level 4

– 15 kV (air discharge)

– 8 kV (contact discharge)

MIL STD 883G- Method 3015-7: class 3B

– 25 kV (human body model)

■

Applications

Differential data transmission line protection, such

as:

■

RS-232

RS-423

RS-422

RS-485

Description

Transil diode arrays provide high overvoltage

protection by clamping action. Their

instantaneous response to transient overvoltages

makes them particularly suited to protect voltage

sensitive devices such as MOS technology and

low voltage supplied IC’s.

The ITA series combines high surge capability

against energetic pulses with high voltage

performance against ESD.

TM: Transil is a trademark of STMicroelectronics

November 2007

Rev 2

1/7

www.st.com

Characteristics

ITAxxB1

Table 1.

Symbol

stg

Characteristics

Absolute ratings (T

amb

= 25 °C)

Parameter

Peak pulse power (8/20 µs)

(1)

Peak pulse current (8/20 µs)

(1)

Wire I

t value

(1)

Maximum operating junction temperature

Storage temperature range

Maximum lead temperature for soldering during 10 s at 5 mm for case

initial = T

amb

initial = T

amb

Value

300

0.6

125

-55 to +150

260

Unit

°C

1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit

caused by the wire melting.

Table 2.

Symbol

αT

Electrical characteristics (T

amb

= 25 °C)

Parameter

Stand-off voltage

Breakdown voltage

Clamping voltage

Leakage current

Peak pulse current

Voltage temperature coefficient

Capacitance

@ I

max.

µA

max.

(1)

αT

max.

(2)

Order code

min.

(1)

8/20 µs

ITA6V5B1

ITA10B1

ITA18B1

ITA25B1

6.5

-4

/ °C

750

570

350

300

1. Betwenn I/O pin and ground.

2. Between two input pins at 0 V Bias, F = 1 MHz.

2/7

ITAxxB1

Characteristics

Figure 2.

Pulse waveform

Figure 3.

Typical peak pulse power versus

exponential pulse duration

(W)

100

8 µs

1E+04

initial=25°C

ITA25B1

ITA18B1

1E+03

Pulse waveform 8/20 µs

1E+02

ITA6V5B1

ITA10B1

20 µs

1E+01

1E-03

1E-02

(ms) expo

1E-01

1E+00

1E+01

1E+02

Figure 4.

Clamping voltage versus peak

pulse current (exponential

waveform 8/20 µs)

Figure 5.

Peak current I

inducing open

circuit of the wire for one

input/output versus pulse duration

(typical values)

(V)

1E+03

initial=25°C

1E+03

100

(A)

Exponential waveform

1E+02

ITA25B1

ITA18B1

1E+02

1E+01

ITA6V5B1

ITA10B1

1E+01

1E+00

1E-01

1E+00

(A)

1E+01

1E+02

1E+00

1E-02

1E-01

(ms)

1E+00

1E+01

Figure 6.

Junction capacitance versus

reverse applied voltage for one

input/output (typical values)

Figure 7.

Relative variation of leakage

current versus junction

temperature

C(pF)

1E+03

ITA6V5B1

=25°C

F=1MHz

)

=25°C)

5E+3

1E+3

ITA10B1

1E+2

ITA18B1

1E+1

1E+0

ITA25B1

(°C)

1E-1

100

125

150

1E+02

1E+00

(V)

1E+01

3/7

Application information

ITAxxB1

Application information

This monolithic Transil Array is based on 6 unidirectional Transils with a common cathode

and can be configurated to offer up to 5 bidirectional functions. This imposes a maximum

differential voltage between 2 input pins (see

Table 3).

Table 3.

Maximum differential voltages

Maximum differential voltage between two input pins at 25 °C

± 3.5 V

± 5.0 V

± 9.0 V

± 12.5 V

Order code

ITA6V5B1

ITA10B1

ITA18B1

ITA25B1

Figure 8.

RS-232 junction (typical application)

RTS

CTS

GND

Ordering information scheme

Figure 9.

Ordering information scheme

ITA

Integrated Transil Array

Breakdown Voltage (min)

25 = 25 Volt

Type of lines protected

B = Bidirectional

Package

1 = SO-8

Packaging

RL = Tape & reel

Blank = Tube

4/7

ITAxxB1

Package information

●

Epoxy meets UL94, V0

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com.

Table 4.

SO-8 dimensions

Dimensions

ccc C

Ref.

Millimeters

Min.

Typ.

Max.

1.75

0.1

1.25

0.28

0.17

4.80

5.80

3.80

0.25

0.40

1.04

0.10

4.90

6.00

3.90

1.27

0.50

1.27

0.010

0.016

0.48

0.23

5.00

6.20

4.00

0.25

0.004

0.049

0.011

0.007

Min.

Inches

Typ.

Max.

0.069

0.010

0.019

0.009

(Seating

Plane)

h x 45°

0.25mm

(Gage Plane)

0.189 0.193 0.197

0.228 0.236 0.244

0.150 0.154 0.157

0.050

0.020

0.050

0.041

0.004

k°

ccc

Figure 10. SO-8 footprint (dimensions in mm)

6.7

0.54

4.03

1.27

1.335

5/7

参数对比

与ITA6V5B1相近的元器件有：ITA6V5B1RL、ITA25B1RL、ITA10B1、ITA18B1RL、ITA18B1。描述及对比如下：

型号	ITA6V5B1	ITA6V5B1RL	ITA25B1RL	ITA10B1	ITA18B1RL	ITA18B1
描述	ESD Suppressors / TVS Diodes 6.5V 300W Bidirect	ESD Suppressors / TVS Diodes 6.5V 300W Bidirect	ESD Suppressors / TVS Diodes 25V 300W Bidirect	ESD Suppressors / TVS Diodes Dataline Protection	ESD Suppressors / TVS Diodes 18V 300W Bidirect	ESD Suppressors / TVS Diodes 18V 300W Bidirect
Brand Name	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
是否Rohs认证	符合	符合	符合	符合	符合	符合
零件包装代码	SOD	SOD	SOD	SOD	SOD	SOD
包装说明	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	ROHS COMPLIANT, PLASTIC, SOP-8	R-PDSO-G8
针数	8	8	8	8	8	8
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最小击穿电压	6.5 V	6.5 V	25 V	10 V	18 V	18 V
最大钳位电压	12 V	12 V	38 V	19 V	28 V	28 V
配置	COMMON CATHODE, 6 ELEMENTS	COMMON CATHODE, 6 ELEMENTS	COMMON CATHODE, 6 ELEMENTS	COMMON CATHODE, 6 ELEMENTS	COMMON CATHODE, 6 ELEMENTS	COMMON CATHODE, 6 ELEMENTS
最小二极管电容	750 pF	750 pF	300 pF	570 pF	350 pF	350 pF
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
JESD-609代码	e4	e4	e4	e4	e4	e4
最大非重复峰值反向功率耗散	300 W	300 W	300 W	300 W	300 W	300 W
元件数量	6	6	6	6	6	6
端子数量	8	8	8	8	8	8
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	260	260	260	260	260
极性	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	5 V	5 V	24 V	5 V	15 V	15 V
最大反向电流	10 µA	10 µA	4 µA	4 µA	4 µA	4 µA
表面贴装	YES	YES	YES	YES	YES	YES
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子面层	Nickel/Palladium/Gold (Ni/Pd/Au)	NICKEL PALLADIUM GOLD	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	30	30	30	30	30	30
厂商名称	ST(意法半导体)	ST(意法半导体)	-	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)
Base Number Matches	1	1	1	-	1	-
湿度敏感等级	-	3	3	1	1	1