The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 October 2004.
INCH-POUND
MIL-PRF-19500/158P
1 July 2004
SUPERSEDING
MIL-PRF-19500/158N
18 September 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,
TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1
THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED
(TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 8.4 volts
±
5 percent, silicon, voltage-reference,
temperature compensated diodes. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for
each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to DO-7 and DO-35) and figure 2 (DO-213AA).
1.3 Maximum ratings. Unless otherwise specified, maximum ratings (T
A
= +25
°
C).
P
T
mW
500
T
STG
and TJ
°
C
-55 to +175
I
ZM
(1)
mA dc
55
Power derating above T
A
= +25
°
C
mW/
°
C
3.33
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper I
Z
= 10 mA.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/158P
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at T
A
= +25
°
C.
Type (1)
∆
V
Z
(voltage-temperature
stability)
I
Z
= 10 mA dc
mV dc
1N3154-1, 1N3154UR-1
1N3155-1, 1N3155UR-1
1N3156-1, 1N3156UR-1
1N3157-1, 1N3157UR-1
130.0
65.0
26.0
13.0
Z
Z
I
Z
= 10.0 mA dc
V
Z
I
Z
= 10.0 mA dc
Min
volts
7.98
7.98
7.98
7.98
Max
volts
8.82
8.82
8.82
8.82
I
R
V
R
= 5.5 V
ohms
15
15
15
15
µ
A
10.0
10.0
10.0
10.0
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper I
Z
= 10 mA.
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
*
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://www.dodssp.daps.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA
19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/158P
Dimensions
Symbol
Inches
Min
BD
BL
LD
LL
LL
1
.060
.120
.018
1.000
Max
.107
.300
.023
1.500
.050
Millimeters
Min
1.52
3.05
0.46
25.40
Max
2.72
7.62
0.58
38.10
1.27
4
3
3
Notes
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within
this cylinder but shall not be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than
heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φ
x symbology.
* FIGURE 1.
Physical dimensions, 1N3154-1, 1N3155-1, 1N3156-1,
1N3157-1 (similar to DO-7 and DO-35).
3
MIL-PRF-19500/158P
Dimensions
Symbol
Inches
Min
BD
BL
ECT
S
.063
.130
.016
Max
.067
.146
.022
Millimeters
Min
1.60
3.30
0.41
Max
1.70
3.70
0.56
.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φ
x symbology.
FIGURE 2. Physical dimensions, 1N3154UR-1, 1N3155UR-1, 1N3156UR-1,
and 1N3157UR-1 (DO-213AA).
4
MIL-PRF-19500/158P
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and figures 1 and 2 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Diode construction. These devices shall be constructed in a manner and using material which enable the
diodes to meet the applicable requirements of MIL-PRF-19500 and this document.
3.5.1 Dash-one construction. Shall be as specified in MIL-PRF-19500.
3.5.2 JANS construction. Construction shall be dash-one, category I or II metallurgical bond in accordance with
MIL-PRF-19500.
3.6 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6.1 Marking of "UR" version devices. For "UR" version devices only, all marking (except polarity) may be omitted
from the body, but shall be retained on the initial container.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see 4.3).
Conformance inspection (see 4.4).
4.1.1 Sampling inspection. Sampling inspection shall be in accordance with MIL-PRF-19500 and as specified
herein, except that lot accumulation period shall be 3 months in lieu of 6 weeks.
5
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